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IRLHS6376TRPBF

IRLHS6376TRPBF
Mfr. #:
IRLHS6376TRPBF
제조사:
Infineon Technologies
설명:
MOSFET 2N-CH 30V 3.6A PQFN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRLHS6376TRPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IRLHS6376TRPBF 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
FET - 어레이
시리즈
헥스펫
포장
Digi-ReelR 대체 패키징
장착 스타일
SMD/SMT
패키지 케이스
6-VDFN Exposed Pad
기술
시
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
2 Channel
공급자-장치-패키지
6-PQFN (2x2)
구성
듀얼
FET형
2 N-Channel (Dual)
파워맥스
1.5W
트랜지스터형
2 N-Channel
드레인-소스 전압 Vdss
30V
입력-커패시턴스-Ciss-Vds
270pF @ 25V
FET 기능
로직 레벨 게이트
Current-Continuous-Drain-Id-25°C
3.6A
Rds-On-Max-Id-Vgs
63 mOhm @ 3.4A, 4.5V
Vgs-th-Max-Id
1.1V @ 10μA
Gate-Charge-Qg-Vgs
2.8nC @ 4.5V
Pd 전력 손실
1.5 W
Vgs 게이트 소스 전압
12 V
Id-연속-드레인-전류
3.6 A
Vds-드레인-소스-고장-전압
30 V
Rds-On-Drain-Source-Resistance
63 mOhms
트랜지스터 극성
N-채널
Qg-Gate-Charge
2.8 nC
Tags
IRLHS6376TRP, IRLHS6376T, IRLHS637, IRLHS63, IRLHS6, IRLHS, IRLH, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***et Europe
Transistor MOSFET Array Dual N-CH 30V 3.4A 6-Pin PQFN T/R
***p One Stop Japan
Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Dual N-Channel MOSFET | Target Applications: DC Switches; Load Switch
***ment14 APAC
DUAL N CH, 30V, 3.6A, PQFN-6; Transistor; DUAL N CH, 30V, 3.6A, PQFN-6; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:3.6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.048ohm; Rds(on) Test Voltage Vgs:4.5V
Dual PQFN HEXFET® Power MOSFETs
Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
부분 # 제조 설명 재고 가격
IRLHS6376TRPBF
DISTI # V72:2272_13889594		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant		8516
  • 6000:$0.1715
  • 3000:$0.1971
  • 1000:$0.1993
  • 500:$0.2471
  • 250:$0.2499
  • 100:$0.2527
  • 25:$0.3654
  • 10:$0.3701
  • 1:$0.4268
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBFCT-ND		Infineon Technologies AGMOSFET 2N-CH 30V 3.6A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3049In Stock
  • 1000:$0.2894
  • 500:$0.3667
  • 100:$0.4903
  • 10:$0.6450
  • 1:$0.7600
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBFDKR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 3.6A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3049In Stock
  • 1000:$0.2894
  • 500:$0.3667
  • 100:$0.4903
  • 10:$0.6450
  • 1:$0.7600
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBFTR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 3.6A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.2585
IRLHS6376TRPBF
DISTI # 27507049		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant		12000
  • 40000:$0.1285
  • 24000:$0.1324
  • 16000:$0.1353
  • 8000:$0.1391
  • 4000:$0.1429
IRLHS6376TRPBF
DISTI # 26196122		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant		8516
  • 6000:$0.1715
  • 3000:$0.1971
  • 1000:$0.1993
  • 500:$0.2471
  • 250:$0.2499
  • 100:$0.2527
  • 42:$0.3654
IRLHS6376TRPBF
DISTI # 30605990		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant		3900
  • 1000:$0.2371
  • 500:$0.2576
  • 100:$0.3047
  • 54:$0.4718
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRLHS6376TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 4000
  • 4000:$0.1489
  • 8000:$0.1449
  • 16000:$0.1409
  • 24000:$0.1379
  • 40000:$0.1339
IRLHS6376TRPBF
DISTI # SP001573000		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R (Alt: SP001573000)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2199
  • 8000:€0.1709
  • 16000:€0.1399
  • 24000:€0.1179
  • 40000:€0.1099
IRLHS6376TRPBF
DISTI # 91Y4786		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,RoHS Compliant: Yes0
  • 1:$0.6000
  • 10:$0.4930
  • 25:$0.4290
  • 50:$0.3650
  • 100:$0.3010
  • 250:$0.2780
  • 500:$0.2550
  • 1000:$0.2320
IRLHS6376TRPBF.
DISTI # 27AC6942		Infineon Technologies AGTransistor Polarity:Dual N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:1.5W RoHS Compliant: Yes0
    IRLHS6376TRPBF
    DISTI # 942-IRLHS6376TRPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 2.8nC
    RoHS: Compliant    		19668
    • 1:$0.6000
    • 10:$0.4930
    • 100:$0.3010
    • 1000:$0.2320
    • 4000:$0.1980
    IRLHS6376TRPBFInfineon Technologies AGDual N-Channel 30 V 63 mOhm 2.8 nC HEXFET Power Mosfet - PQFN 2 x 2 mm
    RoHS: Compliant    		4000Reel
    • 4000:$0.1520
    IRLHS6376TRPBF
    DISTI # 9155092P    		Infineon Technologies AGMOSFET DUAL N-CH HEXFET 30V 3.6A PQFN8, RL8000
    • 200:£0.0860
    IRLHS6376TRPBF
    DISTI # 2579953    		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8
    RoHS: Compliant    		2640
    • 5:£0.4260
    • 25:£0.2540
    • 100:£0.2300
    • 250:£0.1920
    • 500:£0.1700
    IRLHS6376TRPBF
    DISTI # C1S322000502260    		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
    RoHS: Compliant    		8516
    • 250:$0.2580
    • 100:$0.2587
    • 25:$0.3709
    • 10:$0.3729
    IRLHS6376TRPBF
    DISTI # C1S322000502251    		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
    RoHS: Compliant    		3900
    • 1000:$0.1860
    • 500:$0.2020
    • 100:$0.2390
    • 50:$0.2730
    • 10:$0.3930
    IRLHS6376TRPBF
    DISTI # 2579953    		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8
    RoHS: Compliant    		0
    • 1:$0.9500
    • 10:$0.7810
    • 100:$0.4770
    • 1000:$0.3680
    • 4000:$0.3130
    • 8000:$0.2930
    • 24000:$0.2780
    • 48000:$0.2710
    영상 부분 # 설명
    IRLHS6342TRPBF

    Mfr.#: IRLHS6342TRPBF

    OMO.#: OMO-IRLHS6342TRPBF

    		 MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC
    IRLHS6376TRPBF

    Mfr.#: IRLHS6376TRPBF

    OMO.#: OMO-IRLHS6376TRPBF

    		 MOSFET 30V 1 N-CH HEXFET 2.8nC
    IRLHS6376TR2PBF

    Mfr.#: IRLHS6376TR2PBF

    OMO.#: OMO-IRLHS6376TR2PBF

    		 MOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl
    IRLHS6342TR2PBF

    Mfr.#: IRLHS6342TR2PBF

    OMO.#: OMO-IRLHS6342TR2PBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 8.7A PQFN
    IRLHS6342TRPBF.

    Mfr.#: IRLHS6342TRPBF.

    OMO.#: OMO-IRLHS6342TRPBF--1190

    		 Continuous Drain Current Id:8.7A, Drain Source Voltage Vds:30V, Automotive Qualification Standard:- RoHS Compliant: Yes
    IRLHS6376PBF

    Mfr.#: IRLHS6376PBF

    OMO.#: OMO-IRLHS6376PBF-1190

    		 신규 및 오리지널
    IRLHS6376TRPBF

    Mfr.#: IRLHS6376TRPBF

    OMO.#: OMO-IRLHS6376TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET 2N-CH 30V 3.6A PQFN
    IRLHS6376TR2PBF-CUT TAPE

    Mfr.#: IRLHS6376TR2PBF-CUT TAPE

    OMO.#: OMO-IRLHS6376TR2PBF-CUT-TAPE-1190

    		 신규 및 오리지널
    IRLHS6376TRPBF-CUT TAPE

    Mfr.#: IRLHS6376TRPBF-CUT TAPE

    OMO.#: OMO-IRLHS6376TRPBF-CUT-TAPE-1190

    		 신규 및 오리지널
    IRLHS6342TR2PBF.

    Mfr.#: IRLHS6342TR2PBF.

    OMO.#: OMO-IRLHS6342TR2PBF--1190

    		 신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    5000
    수량 입력:
    IRLHS6376TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.19
    US$0.19
    10
    US$0.18
    US$1.78
    100
    US$0.17
    US$16.86
    500
    US$0.16
    US$79.60
    1000
    US$0.15
    US$149.90
    시작
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