IRF1503PBF

Mfr. #:: IRF1503PBF
제조사:: Infineon Technologies
설명:: RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF1503PBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: IR

제품 카테고리: FET - 단일

포장: 튜브

단위 무게: 0.211644 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-220-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 330 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

가을철: 48 ns

상승 시간: 130 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 240 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 3.3 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 59 ns

일반 켜기 지연 시간: 17 ns

Qg-Gate-Charge: 130 nC

채널 모드: 상승

Tags: IRF1503, IRF150, IRF15, IRF1, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF1503PBF 설명

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 240A;TO-220AB;PD 330W;-55de

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***et: Trans MOSFET N-CH 30V 240A 3-Pin(3+Tab) TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 30V, 240A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:75A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:3.3ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:960A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

부분 #	제조	설명	재고	가격
IRF1503PBF DISTI # IRF1503PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 75A TO-220AB RoHS: Compliant Min Qty: 3000 Container: Tube	Temporarily Out of Stock	3000:$1.5874
IRF1503PBF DISTI # 32628576	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 240A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	19000	3000:$1.4756
IRF1503PBF DISTI # IRF1503PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 240A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1503PBF) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	3000:$1.1900 5000:$1.1900 8000:$1.0900 15000:$1.0900 30000:$1.0900
IRF1503PBF DISTI # 70016944	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.6 Milliohms,ID 240A,TO-220AB,PD 330W,-55de RoHS: Compliant	0	3000:$3.7600 6000:$3.6850 15000:$3.5720 30000:$3.4220 75000:$3.1960
IRF1503PBF DISTI # 942-IRF1503PBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC RoHS: Compliant	0	3000:$1.8000
IRF1503PBF	International Rectifier	POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 30V, 0.0033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB	35	30:$2.3588 9:$2.5947 1:$3.5382
IRF1503PBF DISTI # IRF1503PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,240A,330W,TO220AB	103	1:$2.3500 3:$2.1500 10:$1.8200 100:$1.5900
IRF1503PBF	International Rectifier	RoHS: Compliant	Europe - 220
IRF1503PBF DISTI # XSKDRABV0021334	Infineon Technologies AG	PowerField-EffectTransistor,100AI(D),40V,0.009ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB RoHS: Compliant	1985 in Stock0 on Order	1985:$2.0640 400:$2.2080
IRF1503PBF DISTI # 8657440	Infineon Technologies AG	RoHS: Compliant	0	1000:$3.0600 500:$3.2900 250:$3.7100 100:$4.1600 10:$5.1300 1:$6.2300

관련 상품

영상	부분 #	설명
	Mfr.#: IRF150P220XKMA1 OMO.#: OMO-IRF150P220XKMA1	MOSFET TRENCH_MOSFETS
	Mfr.#: IRF150P221XKMA1 OMO.#: OMO-IRF150P221XKMA1	MOSFET TRENCH_MOSFETS
	Mfr.#: IRF150P221XKMA1 OMO.#: OMO-IRF150P221XKMA1-1190	TRENCH_MOSFETS - Rail/Tube (Alt: IRF150P221XKMA1)
	Mfr.#: IRF1503STRRPBF OMO.#: OMO-IRF1503STRRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 75A D2PAK
	Mfr.#: IRF150 OMO.#: OMO-IRF150-1190	Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3
	Mfr.#: IRF1503PBF,IRF1503 OMO.#: OMO-IRF1503PBF-IRF1503-1190	신규 및 오리지널
	Mfr.#: IRF1503STRPBF OMO.#: OMO-IRF1503STRPBF-1190	신규 및 오리지널
	Mfr.#: IRF150A OMO.#: OMO-IRF150A-1190	신규 및 오리지널
	Mfr.#: IRF150D1 OMO.#: OMO-IRF150D1-1190	신규 및 오리지널
	Mfr.#: IRF1503PBF OMO.#: OMO-IRF1503PBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC

유효성

재고:: Available
주문 시:: 1000
수량 입력:

IRF1503PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.64~~; ~~US$1.64~~

10: ~~US$1.55~~; ~~US$15.53~~

100: ~~US$1.47~~; ~~US$147.15~~

500: ~~US$1.39~~; ~~US$694.90~~

1000: ~~US$1.31~~; ~~US$1 308.00~~

시작

IRF1503 11
IRF150 20
IRF15 21
IRF1 280
IRF 8615

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IRF1503PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes