SI7956DP-T1-E3

Mfr. #:: SI7956DP-T1-E3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET DUAL N-CH 150V (D-S)
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI7956DP-T1-E3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI7956DP-E3

단위 무게: 0.017870 oz

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR SO-8 Dual

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: PowerPAKR SO-8 Dual

구성: 듀얼

FET형: 2 N-Channel (Dual)

파워맥스: 1.4W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 150V

입력-커패시턴스-Ciss-Vds: -

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 2.6A

Rds-On-Max-Id-Vgs: 105 mOhm @ 4.1A, 10V

Vgs-th-Max-Id: 4V @ 250μA

Gate-Charge-Qg-Vgs: 26nC @ 10V

Pd 전력 손실: 1.4 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 36 ns

상승 시간: 36 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 2.6 A

Vds-드레인-소스-고장-전압: 150 V

Rds-On-Drain-Source-Resistance: 105 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 18 ns

일반 켜기 지연 시간: 13 ns

채널 모드: 상승

Tags: SI795, SI79, SI7

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7956DP-T1-E3 설명

***th Star Micro: Transistor MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET 2N-CH 150V 2.6A PPAK SO-8

***ark: Transistor; Continuous Drain Current, Id:4100mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
SI7956DP-T1-E3 DISTI # V72:2272_09216419	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	5440	3000:$1.6610 1000:$1.6790 500:$1.8390 250:$2.0010 100:$2.1210 25:$2.3950 10:$2.4750 1:$2.7350
SI7956DP-T1-E3 DISTI # SI7956DP-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 150V 2.6A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.6678
SI7956DP-T1-E3 DISTI # 31339702	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	5440	3000:$1.6870 1000:$1.6930 500:$1.8510 250:$2.0150 100:$2.1320 25:$2.4070 10:$2.4880 5:$2.7530
SI7956DP-T1-E3 DISTI # SI7956DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7956DP-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.5900 6000:$1.5900 12000:$1.4900 18000:$1.4900 30000:$1.3900
SI7956DP-T1-E3 DISTI # 57J5757	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 150V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.1A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.115ohm,Rds(on) Test Voltage Vgs:20V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$1.6400 2000:$1.5700 4000:$1.4700 8000:$1.3600 12000:$1.3100 20000:$1.2900
SI7956DP-T1-E3 DISTI # 781-SI7956DP-T1-E3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0	1:$3.2000 10:$2.6500 100:$2.1800 250:$2.1100 500:$1.9000 1000:$1.6000 3000:$1.5200
SI7956DP-T1-E3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas -
SI7956DP-T1-E3 DISTI # C1S803601298506	Vishay Intertechnologies	MOSFETs	5440	250:$2.0150 100:$2.1320 25:$2.4070 10:$2.4880 1:$2.7530

영상	부분 #	설명
	Mfr.#: SI7956DP-T1-GE3 OMO.#: OMO-SI7956DP-T1-GE3	MOSFET 150V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7956DP-T1-E3 OMO.#: OMO-SI7956DP-T1-E3	MOSFET 150V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7956DP-T1-E3 OMO.#: OMO-SI7956DP-T1-E3-VISHAY	RF Bipolar Transistors MOSFET DUAL N-CH 150V (D-S)
	Mfr.#: SI7956DP-T1-GE3 OMO.#: OMO-SI7956DP-T1-GE3-VISHAY	MOSFET 2N-CH 150V 2.6A PPAK SO-8

SI7956DP-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes