TGF2160

TGF2160
Mfr. #:
TGF2160
제조사:
Qorvo
설명:
RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TGF2160 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
TGF2160 추가 정보
제품 속성
속성 값
제조사
트라이퀸트(Qorvo)
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
쟁반
부분 별칭
1098617
장착 스타일
SMD/SMT
작동 온도 범위
- 65 C to + 150 C
기술
GaAs
구성
듀얼
트랜지스터형
pHEMT
얻다
10.4 dB
Pd 전력 손실
5.6 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 65 C
동작 주파수
20 GHz
Id-연속-드레인-전류
517 mA
Vds-드레인-소스-고장-전압
12 V
순방향 트랜스컨덕턴스-최소
619 mS
Vgs-Gate-Source-Breakdown-Voltage
- 7 V
P1dB-압축점
32.5 dBm
Tags
TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
TGF2160 1600µm Discrete GaAs pHEMT
Qorvo TGF2160 1600µm Discrete GaAs pHEMT operates from DC to 20GHz and is designed using the Qorvo 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. Qorvo TGF2160 typically provides 32.5dBm of output power at P1dB with gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
부분 # 제조 설명 재고 가격
TGF2160
DISTI # 772-TGF2160
QorvoRF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
RoHS: Compliant
0
  • 100:$17.2700
  • 300:$16.1400
  • 500:$15.0900
영상 부분 # 설명
TGF2978-SM

Mfr.#: TGF2978-SM

OMO.#: OMO-TGF2978-SM

RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
TGF2953

Mfr.#: TGF2953

OMO.#: OMO-TGF2953

RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF25-07870787-039

Mfr.#: TGF25-07870787-039

OMO.#: OMO-TGF25-07870787-039

Thermal Interface Products 2.5W/m-K 200*200*1 TGF25 Yellow
TGF2021-04-SD T/R

Mfr.#: TGF2021-04-SD T/R

OMO.#: OMO-TGF2021-04-SD-T-R-318

RF JFET Transistors DC-4GHz 5Volts
TGF3015-SM-EVB

Mfr.#: TGF3015-SM-EVB

OMO.#: OMO-TGF3015-SM-EVB-1152

RF Development Tools
TGF3020-SM-EVB1

Mfr.#: TGF3020-SM-EVB1

OMO.#: OMO-TGF3020-SM-EVB1-1152

RF Development Tools
TGF2022-2

Mfr.#: TGF2022-2

OMO.#: OMO-TGF2022-2-1190

신규 및 오리지널
TGF4350-EPU

Mfr.#: TGF4350-EPU

OMO.#: OMO-TGF4350-EPU-1190

신규 및 오리지널
TGFSB

Mfr.#: TGFSB

OMO.#: OMO-TGFSB-PANDUIT

TG FIBER SPOOL BRACKET
유효성
재고:
Available
주문 시:
3000
수량 입력:
TGF2160의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$22.64
US$22.64
10
US$21.50
US$215.03
100
US$20.37
US$2 037.15
500
US$19.24
US$9 619.90
1000
US$18.11
US$18 108.00
시작
Top