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SI4435DDY-T1-GE3

Mfr. #:
SI4435DDY-T1-GE3
제조사:
Vishay
설명:
MOSFET P-CH 30V 11.4A 8-SOIC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4435DDY-T1-GE3 데이터 시트
ECAD Model:
재고:
Available
주문 시:
1500
수량 입력:
SI4435DDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
수량
단가
내선 가격
1
US$0.31
US$0.31
10
US$0.30
US$2.95
100
US$0.28
US$27.95
500
US$0.26
US$131.95
1000
US$0.25
US$248.40
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
제품 속성
속성 값
제조사
비쉐이 실리콘
제품 카테고리
FET - 단일
시리즈
트렌치FETR
포장
Digi-ReelR 대체 패키징
부분 별칭
SI4435DDY-GE3
단위 무게
0.006596 oz
장착 스타일
SMD/SMT
패키지 케이스
8-SOIC (0.154", 3.90mm Width)
기술
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
8-SO
구성
하나의
FET형
MOSFET P-채널, 금속 산화물
파워맥스
5W
트랜지스터형
1 P-Channel
드레인-소스 전압 Vdss
30V
입력-커패시턴스-Ciss-Vds
1350pF @ 15V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
11.4A (Tc)
Rds-On-Max-Id-Vgs
24 mOhm @ 9.1A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Charge-Qg-Vgs
50nC @ 10V
Pd 전력 손실
2.5 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
12 ns 16 ns
상승 시간
8 ns 35 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
8.1 A
Vds-드레인-소스-고장-전압
- 30 V
Rds-On-Drain-Source-Resistance
24 mOhms
트랜지스터 극성
P-채널
일반 꺼짐 지연 시간
45 ns 40 ns
일반 켜기 지연 시간
10 ns 42 ns
채널 모드
상승
Tags
SI4435DDY-T1, SI4435DDY-T, SI4435DD, SI4435D, SI4435, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -7A,SO-8,PD 1.5W,VGS+/-20V,-55C
***ure Electronics
Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8
***ark
P Channel Mosfet,-30V,-8.1A, Soic-8; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
부분 # 제조 설명 재고 가격
SI4435DDY-T1-GE3
DISTI # V72:2272_09216493
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R
RoHS: Compliant
197
  • 100:$0.3373
  • 25:$0.4726
  • 10:$0.4745
  • 1:$0.5541
SI4435DDY-T1-GE3
DISTI # SI4435DDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 11.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
89In Stock
  • 1000:$0.3384
  • 500:$0.4231
  • 100:$0.5711
  • 10:$0.7400
  • 1:$0.8500
SI4435DDY-T1-GE3
DISTI # SI4435DDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 11.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
89In Stock
  • 1000:$0.3384
  • 500:$0.4231
  • 100:$0.5711
  • 10:$0.7400
  • 1:$0.8500
SI4435DDY-T1-GE3
DISTI # SI4435DDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 11.4A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 2500:$0.2978
SI4435DDY-T1-GE3
DISTI # 24715364
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R
RoHS: Compliant
155000
  • 2500:$0.2681
SI4435DDY-T1-GE3
DISTI # 9769540
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R
RoHS: Compliant
10000
  • 2500:$0.2037
SI4435DDY-T1-GE3
DISTI # 30605307
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R
RoHS: Compliant
378
  • 100:$0.4080
  • 50:$0.4985
  • 10:$0.7484
SI4435DDY-T1-GE3
DISTI # 27510649
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R
RoHS: Compliant
197
  • 29:$0.5541
SI4435DDY-T1-GE3
DISTI # SI4435DDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R (Alt: SI4435DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 26860
  • 2500:€0.4249
  • 5000:€0.2889
  • 10000:€0.2489
  • 15000:€0.2299
  • 25000:€0.2139
SI4435DDY-T1-GE3
DISTI # SI4435DDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4435DDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.2759
  • 5000:$0.2679
  • 10000:$0.2569
  • 15000:$0.2499
  • 25000:$0.2429
SI4435DDY-T1-GE3
DISTI # SI4435DDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R (Alt: SI4435DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4435DDY-T1-GE3
    DISTI # SI4435DDY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4435DDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Cut Tape
    Americas - 0
    • 1:$0.2909
    • 25:$0.2909
    • 62:$0.2899
    • 125:$0.2889
    • 312:$0.2889
    • 625:$0.2879
    • 1250:$0.2869
    SI4435DDY-T1-GE3
    DISTI # 84R8049
    Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 84R8049)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$0.7600
    • 10:$0.6070
    • 25:$0.5580
    • 50:$0.5090
    • 100:$0.4600
    • 250:$0.4200
    • 500:$0.3800
    SI4435DDY-T1-GE3
    DISTI # 15R5017
    Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: 15R5017)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 1:$0.2670
    • 5000:$0.2570
    • 10000:$0.2480
    SI4435DDY-T1-GE3
    DISTI # 23T8506
    Vishay IntertechnologiesMOSFET Transistor, P Channel, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V , RoHS Compliant: Yes5471
    • 1:$0.7600
    • 10:$0.6070
    • 25:$0.5580
    • 50:$0.5090
    • 100:$0.4600
    • 250:$0.4200
    • 500:$0.3800
    • 1000:$0.3040
    SI4435DDY-T1-GE3
    DISTI # 84R8049
    Vishay IntertechnologiesP CHANNEL MOSFET,-30V,-8.1A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.1A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):19.5mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes3205
    • 1:$0.2070
    • 10:$0.2070
    • 25:$0.2070
    • 50:$0.2070
    • 100:$0.2070
    • 250:$0.2070
    • 500:$0.2070
    • 1000:$0.2070
    SI4435DDY-T1-GE3
    DISTI # 15R5017
    Vishay IntertechnologiesP CHANNEL MOSFET,-30V,-8.1A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.1A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):19.5mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V, RoHS Compliant: Yes0
    • 1:$0.2760
    • 2500:$0.2670
    • 5000:$0.2570
    • 10000:$0.2480
    SI4435DDY-T1-GE3.
    DISTI # 26AC3331
    Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO0
    • 1:$0.2760
    • 2500:$0.2670
    • 5000:$0.2570
    • 10000:$0.2480
    SI4435DDY-T1-GE3
    DISTI # 70026450
    Vishay SiliconixMOSFET,P-Ch,Vds -30V,Vgs +/- 20V,Rds(on) 19.5mohm,Id -8.1A,SO-8,Pd 2.5W
    RoHS: Compliant
    1433
    • 1:$0.5000
    • 25:$0.4000
    • 100:$0.3600
    SI4435DDY-T1-GE3
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    0
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    SI4435DDY-T1-GE3
    DISTI # 781-SI4435DDY-GE3
    Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SO-8
    RoHS: Compliant
    818
    • 1:$0.7600
    • 10:$0.6070
    • 100:$0.4600
    • 500:$0.3800
    • 1000:$0.3040
    • 2500:$0.2760
    • 5000:$0.2570
    • 10000:$0.2480
    • 25000:$0.2380
    SI4435DDY-T1-GE3
    DISTI # 7103339
    Vishay IntertechnologiesMOSFET P-CHANNEL 30V 8.1A SOIC8, PK210
    • 10:£0.5380
    • 30:£0.4080
    • 130:£0.3760
    • 630:£0.3460
    • 1250:£0.3180
    SI4435DDY-T1-GE3
    DISTI # 7103339P
    Vishay IntertechnologiesMOSFET P-CHANNEL 30V 8.1A SOIC8, RL3800
    • 30:£0.4080
    • 130:£0.3760
    • 630:£0.3460
    • 1250:£0.3180
    SI4435DDY-T1-GE3Vishay Intertechnologies8100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET33
    • 29:$0.5424
    • 7:$0.7232
    • 1:$0.9040
    SI4435DDY-T1-GE3
    DISTI # SI4435DDY-GE3
    Vishay IntertechnologiesP-Ch 30V 11,4A 2,5W 0,024R SO8
    RoHS: Compliant
    3400
    • 50:€0.2950
    • 100:€0.2350
    • 500:€0.2050
    • 2500:€0.1980
    SI4435DDY-T1-GE3Vishay IntertechnologiesINSTOCK462
      SI4435DDY-T1-GE3Vishay IntertechnologiesINSTOCK311
        SI4435DDY-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SO-8
        RoHS: Compliant
        Americas - 65000
        • 2500:$0.2390
        • 5000:$0.2250
        • 10000:$0.2180
        SI4435DDY-T1-GE3.Vishay IntertechnologiesMOSFET 30V 11.4A 5.0W 24mohm @ 10V
        RoHS: Compliant
        Americas - 4900
        • 25:$0.3790
        • 100:$0.3260
        • 250:$0.2890
        • 500:$0.2670
        • 1000:$0.2580
        SI4435DDY-T1-GE3
        DISTI # 2524622
        Vishay IntertechnologiesP CHANNEL MOSFET,-30V,-8.1A, SOIC-8, FULL REEL
        RoHS: Compliant
        0
        • 2500:$0.4720
        SI4435DDY-T1-GE3
        DISTI # 1858951RL
        Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,8-SOIC
        RoHS: Compliant
        0
        • 1:$1.2100
        • 10:$0.9610
        • 100:$0.7280
        • 500:$0.6020
        • 1000:$0.4810
        • 2500:$0.4370
        • 5000:$0.4360
        SI4435DDY-T1-GE3
        DISTI # 1858951
        Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,8-SOIC
        RoHS: Compliant
        5471
        • 1:$1.2100
        • 10:$0.9610
        • 100:$0.7280
        • 500:$0.6020
        • 1000:$0.4810
        • 2500:$0.4370
        • 5000:$0.4360
        SI4435DDY-T1-GE3
        DISTI # 1858951
        Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,8-SOIC
        RoHS: Compliant
        5861
        • 5:£0.5860
        • 25:£0.4620
        • 100:£0.3940
        • 250:£0.3600
        • 500:£0.3250
        SI4435DDY-T1-GE3
        DISTI # C1S803604222993
        Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R
        RoHS: Compliant
        378
        • 100:$0.3200
        • 50:$0.3910
        • 10:$0.5870
        • 1:$2.1000
        영상 부분 # 설명
        SI4435DDY-T1-GE3

        Mfr.#: SI4435DDY-T1-GE3

        OMO.#: OMO-SI4435DDY-T1-GE3

        MOSFET -30V Vds 20V Vgs SO-8
        SI4435DDY-T1-E3

        Mfr.#: SI4435DDY-T1-E3

        OMO.#: OMO-SI4435DDY-T1-E3

        MOSFET -30V Vds 20V Vgs SO-8
        SI4435DDY-T1-E3-CUT TAPE

        Mfr.#: SI4435DDY-T1-E3-CUT TAPE

        OMO.#: OMO-SI4435DDY-T1-E3-CUT-TAPE-1190

        신규 및 오리지널
        SI4435DDY-T1-GE3-CUT TAPE

        Mfr.#: SI4435DDY-T1-GE3-CUT TAPE

        OMO.#: OMO-SI4435DDY-T1-GE3-CUT-TAPE-1190

        신규 및 오리지널
        SI4435DDY

        Mfr.#: SI4435DDY

        OMO.#: OMO-SI4435DDY-1190

        신규 및 오리지널
        SI4435DDY-T1

        Mfr.#: SI4435DDY-T1

        OMO.#: OMO-SI4435DDY-T1-1190

        신규 및 오리지널
        SI4435DDY-T1-E

        Mfr.#: SI4435DDY-T1-E

        OMO.#: OMO-SI4435DDY-T1-E-1190

        신규 및 오리지널
        SI4435DDY-T1-E3

        Mfr.#: SI4435DDY-T1-E3

        OMO.#: OMO-SI4435DDY-T1-E3-VISHAY

        MOSFET P-CH 30V 11.4A 8SOIC
        SI4435DDY-T1-E3 SOP8

        Mfr.#: SI4435DDY-T1-E3 SOP8

        OMO.#: OMO-SI4435DDY-T1-E3-SOP8-1190

        신규 및 오리지널
        SI4435DDY-T1-E3.

        Mfr.#: SI4435DDY-T1-E3.

        OMO.#: OMO-SI4435DDY-T1-E3--1190

        P-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO
        시작
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