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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| RFP4N05LP2158 | HARTING Technology Group | RoHS: Not Compliant | 812 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: RFP4N05 OMO.#: OMO-RFP4N05-1190 |
Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP4N05+ OMO.#: OMO-RFP4N05--1190 |
Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP4N05L OMO.#: OMO-RFP4N05L-1190 |
- Bulk (Alt: RFP4N05L) |
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Mfr.#: RFP4N05LP2158 OMO.#: OMO-RFP4N05LP2158-1190 |
신규 및 오리지널 |
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Mfr.#: RFP4N05LS OMO.#: OMO-RFP4N05LS-1190 |
신규 및 오리지널 |
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Mfr.#: RFP4N05LS2515 OMO.#: OMO-RFP4N05LS2515-1190 |
신규 및 오리지널 |
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Mfr.#: RFP4N06 OMO.#: OMO-RFP4N06-1190 |
Power Field-Effect Transistor, 4A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP4N06L OMO.#: OMO-RFP4N06L-1190 |
신규 및 오리지널 |