SKM22GD123D

SKM22GD123D
Mfr. #:
SKM22GD123D
제조사:
SEMIKRON
설명:
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SKM22GD123D 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
제품 속성
속성 값
Tags
SKM22G, SKM22, SKM2, SKM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1.2KV 25A 12-Pin Case D-67
***ark
Igbt Module, 1.2Kv, 25A, Semitrans 6; Transistor Polarity:n Channel; Dc Collector Current:22A; Collector Emitter Saturation Voltage Vce(On):1.2Kv; Power Dissipation Pd:145W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Product Range:- Rohs Compliant: Yes
***nell
IGBT MODULE, 3-PHASE BRIDGE; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:25A; Voltage, Vce Sat Max:3V; Case Style:SEMITRANS 6; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic Continuous b Max:15A; Current Ic av:25A; Current, Icm Pulsed:25A; External Depth:45mm; External Length / Height:24mm; Fixing Centres:82mm; Fixing Hole Diameter:2.5mm; Power, Pd:145W; Power, Ptot:145W; Temperature, Current:25°C; Time, Rise:35ns; Transistors, No. of:6; Width, External:105mm
***ikron
not recommended for new design Features: MOS input (voltage controlled) N channel, homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (9 mm) and creepage distances (13 mm) Typical Applications: Switched mode power supplies Three phase inverters for AC motor speed control General power switching applications Pulse frequencies also above 15 kHz
부분 # 제조 설명 재고 가격
SKM 22GD123D
DISTI # 69K7649
SEMIKRONIGBT MODULE, 1.2KV, 25A, SEMITRANS 6,Transistor Polarity:N Channel,DC Collector Current:22A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:145W,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:- RoHS Compliant: Yes0
    SKM22GD123D
    DISTI # 9563008
    SEMIKRON 
    RoHS: Compliant
    0
    • 50:$249.9000
    • 20:$275.4000
    • 10:$280.5000
    • 5:$285.6000
    • 1:$300.9000
    SKM22GD123DSEMIKRONInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Not Compliant
    2
      영상 부분 # 설명
      SKM224A

      Mfr.#: SKM224A

      OMO.#: OMO-SKM224A-1190

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      Mfr.#: SKM22GD101D

      OMO.#: OMO-SKM22GD101D-1190

      신규 및 오리지널
      SKM22GD121D

      Mfr.#: SKM22GD121D

      OMO.#: OMO-SKM22GD121D-1190

      신규 및 오리지널
      SKM22GD123D

      Mfr.#: SKM22GD123D

      OMO.#: OMO-SKM22GD123D-1190

      Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
      유효성
      재고:
      Available
      주문 시:
      2000
      수량 입력:
      SKM22GD123D의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.00
      US$0.00
      10
      US$0.00
      US$0.00
      100
      US$0.00
      US$0.00
      500
      US$0.00
      US$0.00
      1000
      US$0.00
      US$0.00
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