FDMS3606S

FDMS3606S
Mfr. #:
FDMS3606S
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET DUAL N-CH. ER TRENCH MO
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDMS3606S 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
Power-56-8
채널 수:
2 Channel
트랜지스터 극성:
N-채널
구성:
듀얼
상표명:
파워트렌치
포장:
키:
1.1 mm
길이:
6 mm
시리즈:
FDMS3606S
트랜지스터 유형:
2 N-Channel
너비:
5 mm
상표:
온세미컨덕터 / 페어차일드
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
단위 무게:
0.006032 oz
Tags
FDMS360, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***rchild Semiconductor
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***nell
MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:27W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
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new, original packaged
***el Nordic
Contact for details
***Yang
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***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
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***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
Dual N-Channel 30 V 13 A 8 mOhm 1 W Mosfet - POWER 56-8
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***ark
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*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 30V, 0.0068ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronic Components
MOSFET DUAL N-CH. ER TRENCH MO
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
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MOSFET 30V 35A 36W 6.0mohm @ 10V
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N-Ch PowerPAK SO-8 BWL 30V 6mohm@10V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.048ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:20V; Power Dissipation, Pd:4.2W ;RoHS Compliant: Yes
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Single N-Channel 30 V 0.0079 Ohm 41.7 W SMT Power Mosfet - PowerPAK-SO-8
***et Japan
Transistor MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 30A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:41.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
부분 # 제조 설명 재고 가격
FDMS3606S
DISTI # FDMS3606SCT-ND
ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMS3606S
    DISTI # FDMS3606SDKR-ND
    ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMS3606S
      DISTI # FDMS3606STR-ND
      ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.7084
      FDMS3606S
      DISTI # FDMS3606S
      ON SemiconductorTrans MOSFET N-CH 30V 13A/27A 8-Pin PQFN T/R (Alt: FDMS3606S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Asia - 3000
      • 3000:$0.8501
      • 6000:$0.8174
      • 9000:$0.7871
      • 15000:$0.7590
      • 30000:$0.7328
      • 75000:$0.7084
      • 150000:$0.6968
      FDMS3606S
      DISTI # FDMS3606S
      ON SemiconductorTrans MOSFET N-CH 30V 13A/27A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3606S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.7839
      • 6000:$0.7789
      • 12000:$0.7689
      • 18000:$0.7589
      • 30000:$0.7399
      FDMS3606S
      DISTI # 68X0377
      ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
      • 1:$0.9200
      FDMS3606SFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
      RoHS: Compliant
      150000
      • 1000:$0.8800
      • 500:$0.9300
      • 100:$0.9700
      • 25:$1.0100
      • 1:$1.0900
      FDMS3606S
      DISTI # 512-FDMS3606S
      ON SemiconductorMOSFET DUAL N-CH. ER TRENCH MO
      RoHS: Compliant
      2975
      • 1:$1.5100
      • 10:$1.2800
      • 100:$0.9900
      • 500:$0.8750
      • 1000:$0.6900
      영상 부분 # 설명
      FDMS1D5N03

      Mfr.#: FDMS1D5N03

      OMO.#: OMO-FDMS1D5N03

      MOSFET PT9 30V/12V Nch PowerTrench SyncFET
      FDMS3600AS

      Mfr.#: FDMS3600AS

      OMO.#: OMO-FDMS3600AS

      MOSFET DUAL N-CH. ER TRENCH MO
      FDMS3624S

      Mfr.#: FDMS3624S

      OMO.#: OMO-FDMS3624S

      MOSFET 25V PowerTrench Power Stage
      FDMS8320LDC

      Mfr.#: FDMS8320LDC

      OMO.#: OMO-FDMS8320LDC

      MOSFET 40V 130A Dual Cool PowerTrench MOSFET
      FDMS8350L

      Mfr.#: FDMS8350L

      OMO.#: OMO-FDMS8350L

      MOSFET FET 40V 0.85 MOHM PQFN56
      FDMS86322

      Mfr.#: FDMS86322

      OMO.#: OMO-FDMS86322

      MOSFET 80V N-Channel PowerTrench MOSFET
      FDMS003N08C

      Mfr.#: FDMS003N08C

      OMO.#: OMO-FDMS003N08C

      MOSFET FET 80V 147A 3.1 mOhm
      FDMS36101L

      Mfr.#: FDMS36101L

      OMO.#: OMO-FDMS36101L-1190

      - Bulk (Alt: FDMS36101L)
      FDMS86101_F065

      Mfr.#: FDMS86101_F065

      OMO.#: OMO-FDMS86101-F065-1190

      신규 및 오리지널
      FDMS86368-F085

      Mfr.#: FDMS86368-F085

      OMO.#: OMO-FDMS86368-F085-ON-SEMICONDUCTOR

      MOSFET N-CH 80V 80A POWER56
      유효성
      재고:
      Available
      주문 시:
      1985
      수량 입력:
      FDMS3606S의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.32
      US$1.32
      10
      US$1.13
      US$11.30
      100
      US$0.87
      US$86.80
      500
      US$0.77
      US$383.50
      1000
      US$0.60
      US$605.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
      시작
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