IXFK32N100P

IXFK32N100P
Mfr. #:
IXFK32N100P
제조사:
Littelfuse
설명:
MOSFET 32 Amps 1000V 0.32 Rds
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFK32N100P 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK32N100P DatasheetIXFK32N100P Datasheet (P4)
ECAD Model:
추가 정보:
IXFK32N100P 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-264-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1 kV
Id - 연속 드레인 전류:
32 A
Rds On - 드레인 소스 저항:
320 mOhms
Vgs th - 게이트 소스 임계 전압:
6.5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
225 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
960 W
구성:
하나의
채널 모드:
상승
상표명:
HiPerFET
포장:
튜브
키:
26.16 mm
길이:
19.96 mm
시리즈:
IXFK32N100
트랜지스터 유형:
1 N-Channel
유형:
극성 전력 MOSFET HiPerFET
너비:
5.13 mm
상표:
익시스
순방향 트랜스컨덕턴스 - 최소:
13 S
가을 시간:
43 ns
상품 유형:
MOSFET
상승 시간:
55 ns
공장 팩 수량:
25
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
76 ns
일반적인 켜기 지연 시간:
50 ns
단위 무게:
0.352740 oz
Tags
IXFK32N1, IXFK32N, IXFK32, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***emi
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***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
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FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
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STMICROELECTRONICS 2STA1943Bipolar (BJT) Single Transistor, PNP, 230 V, 30 MHz, 150 W, 8 A, 80
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2STA1943 Series PNP 230 V 15 A Epitaxial Planar Bipolar Transistor - TO-264
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Trans GP BJT PNP 230V 15A 3-Pin TO-264 Tube
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Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
***ment14 APAC
Transistor, PNP TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power Dissipation Pd:150W;
***nell
TRANSISTOR, PNP TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 8A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 3V; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 8A; Current Ic hFE: 1A; Device Marking: 2STA1943; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 80; Power Dissipation Ptot Max: 150W; Termination Type: Through Hole; Voltage Vcbo: 230V
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STMICROELECTRONICS 2STA2121Bipolar (BJT) Single Transistor, PNP, -250 V, 25 MHz, 220 W, -17 A, 80
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***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT PNP Power Transisto
***nell
TRANS PNP 250V 17A BIT-LA TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -250V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 220W; DC Collector Current: -17A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -3V; Current Ic Continuous a Max: -8A; Gain Bandwidth ft Typ: 25MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Through Hole; Transistor Type: Power Bipolar
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXFK32N100P
DISTI # IXFK32N100P-ND
IXYS CorporationMOSFET N-CH 1000V 32A TO-264
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$16.7888
IXFK32N100P
DISTI # 747-IXFK32N100P
IXYS CorporationMOSFET 32 Amps 1000V 0.32 Rds
RoHS: Compliant
24
  • 1:$20.8700
  • 10:$18.9800
  • 25:$17.5500
  • 50:$16.1500
  • 100:$15.7500
  • 250:$14.4400
  • 500:$13.1000
영상 부분 # 설명
TL431BQDBZT

Mfr.#: TL431BQDBZT

OMO.#: OMO-TL431BQDBZT

Voltage References Adjustable Precision Shunt Regulator
DFLS1150Q-7

Mfr.#: DFLS1150Q-7

OMO.#: OMO-DFLS1150Q-7

Schottky Diodes & Rectifiers SBR Diode
MP2315GJ-Z

Mfr.#: MP2315GJ-Z

OMO.#: OMO-MP2315GJ-Z

Switching Voltage Regulators 3A 24V 500kHz Sync buck
ADP3654ARHZ-RL

Mfr.#: ADP3654ARHZ-RL

OMO.#: OMO-ADP3654ARHZ-RL

Gate Drivers High Speed Dual 4A MOSFET Dvr
SS2H10-E3/52T

Mfr.#: SS2H10-E3/52T

OMO.#: OMO-SS2H10-E3-52T

Schottky Diodes & Rectifiers 2.0 Amp 100 Volt
06035C103KAT2A

Mfr.#: 06035C103KAT2A

OMO.#: OMO-06035C103KAT2A-AVX

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 0.01uF 50volts X7R 10%
TL431BQDBZT

Mfr.#: TL431BQDBZT

OMO.#: OMO-TL431BQDBZT-TEXAS-INSTRUMENTS

Voltage References Adjustable Precision Shunt Regulato
ADP3654ARHZ-RL

Mfr.#: ADP3654ARHZ-RL

OMO.#: OMO-ADP3654ARHZ-RL-ANALOG-DEVICES-INC-ADI

Gate Drivers High Speed Dual 4A MOSFET Dv
DFLS1150Q-7

Mfr.#: DFLS1150Q-7

OMO.#: OMO-DFLS1150Q-7-DIODES

Schottky Diodes & Rectifiers SBR Diode
RK73B1JTTD203J

Mfr.#: RK73B1JTTD203J

OMO.#: OMO-RK73B1JTTD203J-1090

Thick Film Resistors - SMD 1/10watts 20Kohms 5%
유효성
재고:
Available
주문 시:
1992
수량 입력:
IXFK32N100P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$20.87
US$20.87
10
US$18.98
US$189.80
25
US$17.55
US$438.75
50
US$16.15
US$807.50
100
US$15.75
US$1 575.00
250
US$14.44
US$3 610.00
500
US$13.10
US$6 550.00
1000
US$11.96
US$11 960.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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