SI4634DY-T1-E3

Mfr. #:: SI4634DY-T1-E3
제조사:: Vishay / Siliconix
설명:: MOSFET 30V Vds 20V Vgs SO-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4634DY-T1-E3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4634DY-T1-E3 Datasheet
ECAD Model:
추가 정보:: SI4634DY-T1-E3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: E

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

상표명:: TrenchFET

포장:: 릴

키:: 1.75 mm

길이:: 4.9 mm

시리즈:: SI4

너비:: 3.9 mm

상표:: 비쉐이 / 실리콘닉스

상품 유형:: MOSFET

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

부품 번호 별칭:: SI4634DY-E3

단위 무게:: 0.006596 oz

Tags: SI4634DY-T1, SI4634DY-T, SI4634D, SI4634, SI463, SI46, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4634DY-T1-E3 평가 및 리뷰

M***i

Did not check, the marking seems to match!

2019-03-25

T***n

The goods never came

2019-03-12

SI4634DY-T1-E3 설명

***ure Electronics: Single N-Channel 30 V 5.2 mOhms Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 30V 16.3A 8-Pin SOIC N T/R

***ronik: N-CH 30V 25A 5mOhm SO-8 RoHSconf

***S: French Electronic Distributor since 1988

***roFlash: IRF8736PBF N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 6.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 18A, 4.8 MOHM, 17 NC QG, SO-8, Pb-Free | Infineon IRF8736PBF

***icontronic: Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Mosfet Transistor, N Channel, 21 A, 30 V, 3.7 Mohm, 10 V, 5.4 V Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.7Milliohms;ID 21A;SO-8;PD 2.5W;VGS +/-20V

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.4V; Power Dissipation P

*** Stop Electro: Power Field-Effect Transistor, 21A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***et: Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:105A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This device has been designed specifically to improvethe efficiency of DC-DC converters. Using newtechniques in MOSFET construction, the variouscomponents of gate charge and capacitance have beenoptimized to reduce switching losses. Low gateresistance and very low Miller charge enable excellentperformance with both adaptive and fixed dead timegate drive circuits. Very low Rds(on) has beenmaintained to provide an extremely versatile device.

***ure Electronics: Single N-Channel 30 V 3.9 mOhm 6.5 W Surface Mount Power Mosfet - SOIC-8

*** Source Electronics: MOSFET N-CH 30V 30.5A 8-SOIC / Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R

***nell: MOSFET, N CH, 30V, 30.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

***ure Electronics: N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

***Yang: Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ment14 APAC: MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

SI4634DY-T1-E3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4634DY-T1-E3 DISTI # SI4634DY-T1-E3-ND	Vishay Siliconix	MOSFET N-CH 30V 24.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.8465
SI4634DY-T1-E3 DISTI # SI4634DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 16.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4634DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.8289 5000:$0.8049 10000:$0.7719 15000:$0.7499 25000:$0.7299
SI4634DY-T1-E3 DISTI # SI4634DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 16.3A 8-Pin SOIC N T/R (Alt: SI4634DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.6019 5000:€0.4109 10000:€0.3529 15000:€0.3259 25000:€0.3039
SI4634DY-T1-E3 DISTI # 781-SI4634DY-E3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	2420	1:$1.7800 10:$1.4800 100:$1.1400 500:$0.9980 1000:$0.8270 2500:$0.7700 5000:$0.7420 10000:$0.7410
SI4634DY-T1-E3	Vishay Siliconix		1405
SI4634DY-T1-E3	SILI		2197
SI4634DY-T1-E3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8	Americas -

SI4634DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

M***i

T***n

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes