FQP8P10

FQP8P10
Mfr. #:
FQP8P10
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 100V P-Channel QFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FQP8P10 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
P-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
8 A
Rds On - 드레인 소스 저항:
530 mOhms
Vgs - 게이트 소스 전압:
30 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
65 W
구성:
하나의
채널 모드:
상승
상표명:
QFET
포장:
튜브
키:
16.3 mm
길이:
10.67 mm
시리즈:
FQP8P10
트랜지스터 유형:
1 P-Channel
유형:
MOSFET
너비:
4.7 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
4.3 S
가을 시간:
35 ns
상품 유형:
MOSFET
상승 시간:
110 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
20 ns
일반적인 켜기 지연 시간:
11 ns
단위 무게:
0.063493 oz
Tags
FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***u
    M***u
    CA

    looks good thks

    2019-04-02
    V***n
    V***n
    RU

    Normal

    2019-01-09
***Components
In a Tube of 50, P-Channel MOSFET, 5.7 A, 100 V, 3-Pin TO-220 ON Semiconductor FQP8P10
***Semiconductor
Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, TO-220
*** Electronics
TRANSISTOR MOSFET P-CHAN E-MODE TO-220
***ical
Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail
***i-Key
MOSFET P-CH 100V 8A TO-220
***ure Electronics
100V, 8A, 0.53OHM, P-CHANNEL, TO-220
***ser
MOSFETs 100V P-Channel QFET
***inecomponents.com
100V P-Channel QFET®
***ark
Mosfet, P, To-220; Transistor Polarity:p Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W Rohs Compliant: No
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
Prices include import duty and tax. MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Id Max:-8A; Device Marking:FQP8P10; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-30V; Voltage Vgs Rds on Measurement:-10V
***nell
MOSFET, P, TO-220; Biegunowość tranzystora:Kanał P; Prąd ciągły Id drenu:8A; Napięcie drenu / źródła Vds:-100V; Rezystancja przewodzenia Rds(on):0.41ohm; Napięcie Vgs pomiaru Rds(on):-10V; Napięcie progowe Vgs:-4V; Straty mocy Pd:65W; Rodzaj obudowy tranzystora:TO-220; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:Lead (27-Jun-2018); Maks. prąd Id:-8A; Napięcie Vds, typ.:-100V; Napięcie Vgs pomiaru Rds on:-10V; Napięcie Vgs, maks.:-30V; Oznaczenie układu:FQP8P10; Prąd impulsowy Idm:32A; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Zakres temperatury roboczej:-55°C do +175°C
부분 # 제조 설명 재고 가격
FQP8P10
DISTI # V36:1790_06301292
ON SemiconductorQF -100V 530MOHM TO2200
  • 1000000:$0.3139
  • 500000:$0.3148
  • 100000:$0.4927
  • 10000:$0.9130
  • 1000:$0.9900
FQP8P10
DISTI # FQP8P10FS-ND
ON SemiconductorMOSFET P-CH 100V 8A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
1031In Stock
  • 5000:$0.4185
  • 3000:$0.4406
  • 1000:$0.4720
  • 100:$0.7238
  • 25:$0.8812
  • 10:$0.9280
  • 1:$1.0400
FQP8P10
DISTI # FQP8P10
ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 1
Europe - 200
  • 1000:€0.3229
  • 500:€0.3479
  • 100:€0.3769
  • 50:€0.4119
  • 25:€0.4529
  • 10:€0.5029
  • 1:€0.5659
FQP8P10
DISTI # FQP8P10
ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 50
Container: Tube
Americas - 1985
  • 500:$0.3209
  • 250:$0.3289
  • 150:$0.3339
  • 100:$0.3379
  • 50:$0.3399
FQP8P10
DISTI # FQP8P10
ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 715
Container: Bulk
Americas - 0
  • 7150:$0.4319
  • 3575:$0.4429
  • 2145:$0.4479
  • 1430:$0.4539
  • 715:$0.4569
FQP8P10.
DISTI # 14J0096
ON SemiconductorMOSFET, P, TO-220,Transistor Polarity:P Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,Power Dissipation Pd:65W RoHS Compliant: No3259
  • 1000:$0.4550
  • 500:$0.5760
  • 100:$0.6510
  • 10:$0.8480
  • 1:$1.0000
FQP8P10.
DISTI # 27AC5844
Fairchild Semiconductor CorporationQF -100V 530MOHM TO220 ROHS COMPLIANT: YES0
  • 500:$0.3310
  • 250:$0.3390
  • 150:$0.3440
  • 100:$0.3480
  • 1:$0.3500
FQP8P10
DISTI # 512-FQP8P10
ON SemiconductorMOSFET 100V P-Channel QFET
RoHS: Compliant
2285
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6450
  • 500:$0.5700
  • 1000:$0.4500
FQP8P10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
6708
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
FQP8P10
DISTI # 8075879
ON SemiconductorMOSFETFAIRCHILDFQP8P10, PK1150
  • 1000:£0.3200
  • 500:£0.3740
  • 100:£0.4580
  • 50:£0.5270
  • 10:£0.5960
FQP8P10.
DISTI # 4388215
ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant
4254
  • 1000:$0.6920
  • 500:$0.8770
  • 100:$0.9920
  • 10:$1.3000
  • 1:$1.5200
FQP8P10.
DISTI # 4388215
ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant
4272
  • 500:£0.4440
  • 250:£0.4730
  • 100:£0.5020
  • 10:£0.7100
  • 1:£0.8800
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유효성
재고:
Available
주문 시:
1985
수량 입력:
FQP8P10의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.99
US$0.99
10
US$0.84
US$8.40
100
US$0.64
US$64.50
500
US$0.57
US$285.00
1000
US$0.45
US$450.00
시작
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