SIA437DJ-T1-GE3

Mfr. #:: SIA437DJ-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET -20V Vds 8V Vgs PowerPAK SC-70
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIA437DJ-T1-GE3 데이터 시트
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HTML Datasheet:: SIA437DJ-T1-GE3 Datasheet SIA437DJ-T1-GE3 Datasheet (P4-P6)SIA437DJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:
추가 정보:: SIA437DJ-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: PowerPAK-SC70-6

채널 수:: 1 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 20 V

Id - 연속 드레인 전류:: 29.7 A

Rds On - 드레인 소스 저항:: 12 mOhms

Vgs th - 게이트 소스 임계 전압:: 900 mV

Vgs - 게이트 소스 전압:: 8 V

Qg - 게이트 차지:: 90 nC

최소 작동 온도:: - 50 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 19 W

구성:: 하나의

채널 모드:: 상승

상표명:: TrenchFET, PowerPAK

포장:: 릴

키:: 0.75 mm

길이:: 2.05 mm

시리즈:: SIA

트랜지스터 유형:: 1 P-Channel

너비:: 2.05 mm

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 32 S

가을 시간:: 37 ns

상품 유형:: MOSFET

상승 시간:: 22 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 100 ns

일반적인 켜기 지연 시간:: 20 ns

Tags: SIA43, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA437DJ-T1-GE3 설명

***et: Trans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R

***ark: Single P-Ch Ppak Sc70 1G 20V 14.5Mohm @ 4.5V Rohs Compliant: No

***ure Electronics: P-Channel 20V 29.7A 3.5W , 19W Surface Mount Mosfet

***nell: MOSFET, P-CH, 20V, 29.7A, POWERPAKSC70-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-29.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:19W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited

***nsix Microsemi: Power Field-Effect Transistor, 29.7A I(D), 20V, 0.0145ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: MOSFET 20V [email protected] 16A P-Ch

***or: MOSFET P-CH 20V 29.7A PPAK SC70

***ronik: P-CHAN.FET 29,7A 20V PP-SC70-6

***enic: PowerPAK SC-70-6L MOSFETs ROHS

***ure Electronics: Single P-Channel 20 V 0.0155 O 90 nC Surface Mount Mosfet - SOIC-8

***icontronic: Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***i-Key: MOSFET N-CH 20V 10.5A 8-SOIC

***Yang: MOSFET Single N-Ch FET Enhancement Mode - Bulk

***S: French Electronic Distributor since 1988

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:10.5A; On Resistance, Rds(on):0.0135ohm; Rds(on) Test Voltage, Vgs:4.5V; Drain-Source Breakdown Voltage:20V RoHS Compliant: Yes

***(Formerly Allied Electronics): SIA429DJT-T1-GE3 P-channel MOSFET Transistor; 8.5 A; 20 V; 6-Pin PowerPAK SC-70

***et: Trans MOSFET P-CH 20V 10.6A 6-Pin PowerPAK SC-70 T/R

***enic: 20V 12A 3.5W 20.5m´Î@4.5V6A 1V@250Ã×A P Channel PowerPAK SC-70-6 MOSFETs ROHS

***ark: Mosfet, P-Ch, -20V, Powerpak Sc70-6, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.017Ohm; Transistor Mounting:surface Mount; Power Dissipation Pd:19Wrohs Compliant: No

***ical: Trans MOSFET N-CH 20V 10.5A Automotive 6-Pin DFN EP T/R

***(Formerly Allied Electronics): MOSFET,N Channel,Trans,20V 10.5A DFN6 EP | Diodes Inc DMN2013UFDE-7

***des Inc SCT: N-Channel Mosfet, 20V VDS, 8±V VGS

***ark: Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.1V; Power Dissipation:660Mw; No. Of Pins:6Pinsrohs Compliant: No |Diodes Inc. DMN2013UFDE-7.

***emi: Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20V, 9.4A, 14.5mΩ

***ure Electronics: Single N-Channel 20 V 1.9 W 17.5 nC Silicon Surface Mount Mosfet - MICROFET-2x2

***rchild Semiconductor: This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

***emi: 20V Single N-Channel 1.5 V Specified PowerTrench® MOSFET

***et: Trans MOSFET N-CH 20V 9.4A 6-Pin MicroFET T/R

***S: French Electronic Distributor since 1988

***rchild Semiconductor: This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

SIA437DJ-T1-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

부분 #	제조	설명	재고	가격
SIA437DJ-T1-GE3 DISTI # V72:2272_09216176	Vishay Intertechnologies	Trans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	477	250:$0.3793 100:$0.4214 25:$0.4983 10:$0.6090 1:$0.7492
SIA437DJ-T1-GE3 DISTI # V36:1790_09216176	Vishay Intertechnologies	Trans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	0	3000:$0.2393
SIA437DJ-T1-GE3 DISTI # SIA437DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 29.7A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	32305In Stock	1000:$0.3037 500:$0.3796 100:$0.4802 10:$0.6260 1:$0.7100
SIA437DJ-T1-GE3 DISTI # SIA437DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 29.7A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	32305In Stock	1000:$0.3037 500:$0.3796 100:$0.4802 10:$0.6260 1:$0.7100
SIA437DJ-T1-GE3 DISTI # SIA437DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 29.7A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	30000In Stock	30000:$0.2334 15000:$0.2396 6000:$0.2488 3000:$0.2672
SIA437DJ-T1-GE3 DISTI # 32360100	Vishay Intertechnologies	Trans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	477	29:$0.7492
SIA437DJ-T1-GE3 DISTI # SIA437DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R (Alt: SIA437DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 6000	30000:€0.2709 18000:€0.2919 12000:€0.3159 6000:€0.3669 3000:€0.5379
SIA437DJ-T1-GE3 DISTI # SIA437DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA437DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 6000	30000:$0.2250 18000:$0.2312 12000:$0.2378 6000:$0.2479 3000:$0.2555
SIA437DJ-T1-GE3 DISTI # 70AC6473	Vishay Intertechnologies	Trans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 70AC6473) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.2940 500:$0.3510 250:$0.3880 100:$0.4250 50:$0.4930 25:$0.5600 1:$0.7000
SIA437DJ-T1-GE3 DISTI # 70AC6473	Vishay Intertechnologies	MOSFET, P-CH, -20V, -29.7A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-29.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV RoHS Compliant: Yes	3000	1:$0.2070 25:$0.2070 50:$0.2070 100:$0.2070 250:$0.2070 500:$0.2070
SIA437DJ-T1-GE3. DISTI # 81AC9905	Vishay Intertechnologies	SINGLE P-CH PPAK SC70 1G 20V 14.5MOHM @ 4.5V ROHS COMPLIANT: NO	6000	30000:$0.2250 18000:$0.2320 12000:$0.2380 6000:$0.2480 1:$0.2560
SIA437DJ-T1-GE3 DISTI # 78-SIA437DJ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	11362	1:$0.6900 10:$0.5590 100:$0.4240 500:$0.3510 1000:$0.2800 3000:$0.2540 6000:$0.2360 9000:$0.2280 24000:$0.2190
SIA437DJ-T1-GE3 DISTI # 1807334	Vishay Intertechnologies	SINGLE P-CH PPAK SC70 1G 20V 14.5MOHM @, RL	3000	6000:£0.2050 3000:£0.2220
SIA437DJ-T1-GE3 DISTI # TMOSS6674	Vishay Intertechnologies	P-CHAN.FET 29,7A 20V PP-SC70-6 RoHS: Compliant	Stock DE - 48000Stock HK - 0Stock US - 0	3000:$0.2910
SIA437DJ-T1-GE3 DISTI # 2364068	Vishay Intertechnologies	MOSFET, P-CH, 20V, 29.7A, POWERPAKSC70-6	18625	500:£0.2550 250:£0.2810 100:£0.3080 25:£0.4230 5:£0.4820
SIA437DJ-T1-GE3 DISTI # 2364068	Vishay Intertechnologies	MOSFET, P-CH, 20V, 29.7A, POWERPAKSC70-6 RoHS: Compliant	20550	3000:$0.5190 500:$0.5290 100:$0.6400 10:$0.8440 1:$1.0400
SIA437DJ-T1-GE3 DISTI # XSKDRABV0047765	Vishay Intertechnologies	RectifierDiode,Schottky,1Phase,1Element,4A,30VV(RRM),Silicon,DO-214AA RoHS: Compliant	9000 in Stock0 on Order	9000:$0.3707 3000:$0.3971
SIA437DJ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	Americas -

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SIA437DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes