IHW40N60RFFKSA1

Mfr. #:: IHW40N60RFFKSA1
제조사:: Infineon Technologies
설명:: IGBT Transistors IGBT PRODUCTS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IHW40N60RFFKSA1 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

기술:: 시

패키지/케이스:: TO-247-3

시리즈:: RC

포장:: 튜브

상표:: 인피니언 테크놀로지스

상품 유형:: IGBT 트랜지스터

하위 카테고리:: IGBT

상표명:: 트렌치스톱

부품 번호 별칭:: IHW40N60RF IHW4N6RFXK SP000621080

Tags: IHW40N60RF, IHW40N60R, IHW40N60, IHW40N6, IHW40N, IHW4, IHW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IHW40N60RFFKSA1 설명

***ineon SCT: IGBT 600V in TRENCHSTOP™ and Fieldstop technology with optimised diode, PG-TO247-3, RoHS

***ical: Trans IGBT Chip N-CH 600V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 600V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pi

***ineon: Summary of Features: Best-in-class V ce(sat) and V f for outstanding efficiency; Lowest switching losses; Stable temperature behavior; Soft current turn-off waveforms; High breakthrough voltage; Resistance to current spikes over the SOA | Benefits: Lowest power dissipation; Better thermal management; Lower cost for heat sink, cooling and EMI filtering; Highest device safety and reliability; Reduced system costs; Best-in-class performance for competitive price | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Multifunctional printers

*** Stop Electro: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

***ineon SCT: Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies

*** Source Electronics: Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247

***ure Electronics: FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

*** Source Electronics: Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247

***ure Electronics: FGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

***ure Electronics: FGH40N60UF Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247-3

***th Star Micro: Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***p One Stop Global: Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:220A; Rise Time:13ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS

***nell: IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

Market price

부분 #	제조	설명	재고	가격
IHW40N60RFFKSA1 DISTI # V99:2348_06377654	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	236	500:$2.7210 250:$3.2100 100:$3.3290 50:$3.4740 25:$3.9450 10:$4.1289 1:$5.2150
IHW40N60RFFKSA1 DISTI # IHW40N60RFFKSA1-ND	Infineon Technologies AG	IGBT 600V 80A 305W TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	371In Stock	240:$3.5502 10:$4.3330 1:$4.8200
IHW40N60RFFKSA1 DISTI # 32417892	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	3120	240:$2.0543
IHW40N60RFFKSA1 DISTI # 26197282	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	236	3:$5.2150
IHW40N60RFFKSA1 DISTI # IHW40N60RFFKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW40N60RFFKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$2.1900 2400:$2.1900 960:$2.2900 240:$2.3900 480:$2.3900
IHW40N60RFFKSA1 DISTI # IHW40N60RFFKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube - Bulk (Alt: IHW40N60RFFKSA1) Min Qty: 167 Container: Bulk	Americas - 0	835:$1.8900 1670:$1.8900 334:$1.9900 501:$1.9900 167:$2.0900
IHW40N60RFFKSA1 DISTI # 50Y1989	Infineon Technologies AG	IGBT Single Transistor, 80 A, 1.85 V, 305 W, 600 V, TO-247, 3 RoHS Compliant: Yes	689	500:$2.9000 250:$3.2300 100:$3.4100 50:$3.5900 25:$3.7600 10:$3.9400 1:$4.6400
IHW40N60RF DISTI # 726-IHW40N60RF	Infineon Technologies AG	IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body RoHS: Compliant	374	1:$4.5900 10:$3.9000 100:$3.3800 250:$3.2000 500:$2.8700
IHW40N60RFFKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	620	1000:$1.9700 500:$2.0800 100:$2.1600 25:$2.2600 1:$2.4300
IHW40N60RFFKSA1 DISTI # 1107732	Infineon Technologies AG	IGBT TRENCHSTOP N-CHANNEL 600V 40A TO247, PK	56	200:£2.3200 80:£2.4930 40:£2.6680 8:£2.9050 4:£3.4100
IHW40N60RFFKSA1 DISTI # 1107732P	Infineon Technologies AG	IGBT TRENCHSTOP N-CHANNEL 600V 40A TO247, TU	246	200:£2.3200 80:£2.4930 40:£2.6680 8:£2.9050
IHW40N60RFFKSA1 DISTI # 2480888	Infineon Technologies AG	IGBT, SINGLE, 600V, 80A, TO-247-3 RoHS: Compliant	687	500:$4.3300 250:$4.8200 100:$5.0900 10:$5.8800 1:$6.9200
IHW40N60RFFKSA1 DISTI # 2480888	Infineon Technologies AG	IGBT, SINGLE, 600V, 80A, TO-247-3	1389	500:£2.2600 250:£2.5300 100:£2.6700 10:£3.0800 1:£4.0400

영상	부분 #	설명
	Mfr.#: IHW40N60R OMO.#: OMO-IHW40N60R	IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
	Mfr.#: IHW40N65R5XKSA1 OMO.#: OMO-IHW40N65R5XKSA1	IGBT Transistors Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in
	Mfr.#: IHW40N60RFFKSA1 OMO.#: OMO-IHW40N60RFFKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IHW40N60R,H40R60, OMO.#: OMO-IHW40N60R-H40R60--1190	신규 및 오리지널
	Mfr.#: IHW40N60R,IHW30N120R2, OMO.#: OMO-IHW40N60R-IHW30N120R2--1190	신규 및 오리지널
	Mfr.#: IHW40N60RF H40RF60 OMO.#: OMO-IHW40N60RF-H40RF60-1190	신규 및 오리지널
	Mfr.#: IHW40N65R5XKSA1 OMO.#: OMO-IHW40N65R5XKSA1-INFINEON-TECHNOLOGIES	IGBT 650V 80A 230W TO247
	Mfr.#: IHW40N60RXK OMO.#: OMO-IHW40N60RXK-1190	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW40N60RFKSA1)
	Mfr.#: IHW40N60RF OMO.#: OMO-IHW40N60RF-126	IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
	Mfr.#: IHW40N60R OMO.#: OMO-IHW40N60R-126	IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body

IHW40N60RFFKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes