IPD65R380C6ATMA1

Mfr. #:: IPD65R380C6ATMA1
제조사:: Infineon Technologies
설명:: MOSFET LOW POWER_LEGACY
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPD65R380C6ATMA1 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-252-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 650 V

Id - 연속 드레인 전류:: 10.6 A

Rds On - 드레인 소스 저항:: 340 mOhms

Vgs th - 게이트 소스 임계 전압:: 2.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 39 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 83 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 릴

키:: 2.3 mm

길이:: 6.5 mm

시리즈:: CoolMOS C6

트랜지스터 유형:: 1 N-Channel

너비:: 6.22 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 11 ns

상품 유형:: MOSFET

상승 시간:: 12 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 110 ns

일반적인 켜기 지연 시간:: 12 ns

부품 번호 별칭:: IPD65R380C6ATMA1 SP001117734

단위 무게:: 0.139332 oz

Tags: IPD65R380C, IPD65R3, IPD65R, IPD65, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD65R380C6ATMA1 설명

***Yang: Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 650V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***icroelectronics: N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package

***r Electronics: Power Field-Effect Transistor, 13A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***enic: 500V 13A 240m´Î@10V6.5A 110W 3V@250uA 1.35pF@100V N Channel 710pF@100v 19.5nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3 MOSFETs ROHS

*** Electronic Components: MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS

***ical: Trans MOSFET N-CH 650V 8.7A Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: Single N-Channel 650 V 420 mOhm 31.5 nC CoolMOS Power Mosfet - TO-252-3

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***ure Electronics: Single N-Channel 650 V 380 mOhm 32 nC CoolMOS Power Mosfet - TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,10.6A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.6A; Power Dissipation Pd:83W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ark: MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V

***ure Electronics: N-Channel 6000 V 380 mOhm 19 nC CoolMOS P6 Power Transistor - DPAK-3

***el Electronic: 0402 10 nF 50V ±10% Tolerance X7R Surface Mount Multilayer Ceramic Capacitor

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.342ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***icroelectronics: N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package

***ark: Mosfet, N-Ch, 650V, 11A, To-252 Rohs Compliant: Yes

***el Electronic: Cap Ceramic 0.047uF 500V X7R 20% SMD 1812 125C Embossed T/R

***icroelectronics SCT: Power MOSFETs, 650V, 11A, DPAK, Tape and Reel

***enic: 650V 11A 320m´Î@10V5.5A 110W 3V@250uA 1.1pF@100V N Channel 718pF@100V 19.5nC@10V -55¡Í~+150¡Í@(Tj) DPAK MOSFETs ROHS

***icroelectronics: N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package

***et: Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R

*** Electronic Components: MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II

***ure Electronics: MOSFET N-Ch 600 Volt 11 Amp Power MDmesh

***ow.cn: STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com

***r Electronics: Power Field-Effect Transistor, 11A I(D), 650V, 0.455ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***el Electronic: IC BUFFER NON-INVERT 6V 14TSSOP

Market price

부분 #	제조	설명	재고	가격
IPD65R380C6ATMA1 DISTI # IPD65R380C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 10.6A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD65R380C6ATMA1 DISTI # IPD65R380C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 10.6A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD65R380C6ATMA1 DISTI # IPD65R380C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 10.6A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD65R380C6ATMA1 DISTI # 50Y2040	Infineon Technologies AG	Power MOSFET, N Channel, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V RoHS Compliant: Yes	0
IPD65R380C6ATMA1 DISTI # 726-IPD65R380C6ATMA1	Infineon Technologies AG	MOSFET LOW POWER_LEGACY RoHS: Compliant	0
IPD65R380C6ATMA1 DISTI # 2480835RL	Infineon Technologies AG	MOSFET, N-CH, 650V, 10.6A, TO-252-3 RoHS: Compliant	0	2500:$1.2400 1000:$1.2600 500:$1.5200 100:$1.7300 10:$2.1700 1:$2.5600
IPD65R380C6ATMA1 DISTI # 2480835	Infineon Technologies AG	MOSFET, N-CH, 650V, 10.6A, TO-252-3 RoHS: Compliant	95	2500:$1.2400 1000:$1.2600 500:$1.5200 100:$1.7300 10:$2.1700 1:$2.5600
IPD65R380C6ATMA1 DISTI # 2480835	Infineon Technologies AG	MOSFET, N-CH, 650V, 10.6A, TO-252-3 RoHS: Compliant	157	500:£0.7710 250:£0.8230 100:£0.8740 10:£1.1400 1:£1.4700

영상	부분 #	설명
	Mfr.#: IPD65R380E6ATMA1 OMO.#: OMO-IPD65R380E6ATMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: IPD65R380C6 OMO.#: OMO-IPD65R380C6	MOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS C6
	Mfr.#: IPD65R380C6ATMA1 OMO.#: OMO-IPD65R380C6ATMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: IPD65R380C6BTMA1 OMO.#: OMO-IPD65R380C6BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 10.6A TO252-3
	Mfr.#: IPD65R380E6BTMA1 OMO.#: OMO-IPD65R380E6BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 10.6A TO252
	Mfr.#: IPD65R380C6 OMO.#: OMO-IPD65R380C6-1190	Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R380C6BTMA1)
	Mfr.#: IPD65R380C6ATMA1 OMO.#: OMO-IPD65R380C6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 10.6A TO252-3
	Mfr.#: IPD65R380E6 OMO.#: OMO-IPD65R380E6-1190	Trans MOSFET N-CH 700V 10.6A 3-Pin(2+Tab) TO-252
	Mfr.#: IPD65R380E6 , 2SD2402-EY OMO.#: OMO-IPD65R380E6-2SD2402-EY-1190	신규 및 오리지널
	Mfr.#: IPD65R380E6ATMA1 OMO.#: OMO-IPD65R380E6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 10.6A TO252

IPD65R380C6ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes