SIS990DN-T1-GE3

Name: Vishay - SIS990DN-T1-GE3
Brand: Vishay
SKU: OMO-2922785
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIS990DN-T1-GE3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 100V .085ohm@10V 12.1A Dual N-Ch
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIS990DN-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SIS990DN-T1-GE3 추가 정보

제품 속성
속성 값

제조사

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

장착 스타일: SMD/SMT

상표명: ThunderFET TrenchFET

패키지 케이스: PowerPAKR 1212-8 Dual

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: PowerPAKR 1212-8 Dual

구성: 듀얼

FET형: 2 N-Channel (Dual)

파워맥스: 25W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 100V

입력-커패시턴스-Ciss-Vds: 250pF @ 50V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 12.1A

Rds-On-Max-Id-Vgs: 85 mOhm @ 8A, 10V

Vgs-th-Max-Id: 4V @ 250μA

Gate-Charge-Qg-Vgs: 8nC @ 10V

Pd 전력 손실: 25 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 6 ns

상승 시간: 8 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 12.1 A

Vds-드레인-소스-고장-전압: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 86 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 8 ns

일반 켜기 지연 시간: 8 ns

Qg-Gate-Charge: 5.2 nC

순방향 트랜스컨덕턴스-최소: 11 S

Tags: SIS9, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS990DN-T1-GE3 설명

***et Europe: Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK 1212 T/R

***ical: Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK EP T/R

***ark: Dual N-Channel 100-V (D-S) Mosfet

***i-Key: MOSFET 2N-CH 100V 12.1A 1212-8

***et: N-CH POWERPAK1212 BWL 30V 2.2MOHM@10V

***ronik: N-CH 100V 12A 85mOhm PPAK1212

***: N-CHANNEL 100-V DUAL

SIS990DN-T1-GE3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

부분 #	제조	설명	재고	가격
SIS990DN-T1-GE3 DISTI # V72:2272_09215518	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK EP T/R RoHS: Compliant	11648	6000:$0.3396 3000:$0.3512 1000:$0.3628 500:$0.4463 250:$0.5091 100:$0.5147 25:$0.6400 10:$0.6475 1:$0.7627
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 100V 12.1A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2007In Stock	1000:$0.4521 500:$0.5726 100:$0.7384 10:$0.9340 1:$1.0500
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 12.1A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2007In Stock	1000:$0.4521 500:$0.5726 100:$0.7384 10:$0.9340 1:$1.0500
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 12.1A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4096
SIS990DN-T1-GE3 DISTI # 27537544	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK EP T/R RoHS: Compliant	11648	6000:$0.3396 3000:$0.3512 1000:$0.3628 500:$0.4463 250:$0.5091 100:$0.5147 25:$0.6400 17:$0.6475
SIS990DN-T1-GE3 DISTI # 29754374	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK EP T/R RoHS: Compliant	6000	3000:$0.4111
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS990DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.3869 12000:$0.3749 18000:$0.3599 30000:$0.3499 60000:$0.3409
SIS990DN-T1-GE3 DISTI # SIS990DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS990DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.3869 12000:$0.3749 18000:$0.3599 30000:$0.3499 60000:$0.3409
SIS990DN-T1-GE3 DISTI # 55X4645	Vishay Intertechnologies	DUAL N-CHANNEL 100-V (D-S) MOSFET	0	1:$0.4580 1000:$0.4390 2000:$0.3990 4000:$0.3600 6000:$0.3460 10000:$0.3380
SIS990DN-T1-GE3 DISTI # 78-SIS990DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	31568	1:$0.9400 10:$0.7670 100:$0.5880 500:$0.5060 1000:$0.3990 3000:$0.3730 6000:$0.3540
SIS990DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas - 6000
SIS990DN-T1-GE3 DISTI # C1S803605233190	Vishay Intertechnologies	MOSFETs	11648	250:$0.5091 100:$0.5147 25:$0.6400 10:$0.6475

SIS990DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes