SI2308CDS-T1-GE3

Name: Vishay - SI2308CDS-T1-GE3
Brand: Vishay
SKU: OMO-3869262
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI2308CDS-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 60V 2.6A SOT23-3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI2308CDS-T1-GE3 데이터 시트
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추가 정보:: SI2308CDS-T1-GE3 추가 정보

제품 속성
속성 값

Tags: SI2308, SI230, SI23, SI2

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2308CDS-T1-GE3 설명

***et Europe: TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R

***ical: Trans MOSFET N-CH 60V 2.6A 3-Pin SOT-23 T/R

***i-Key: MOSFET N-CH 60V 2.6A SOT23-3

***ark: Mosfet, N-Ch, 60V, 2.6A, 150Deg C, 1.6W; Transistor Polarity:n Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.12Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.6W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 60V, 2.6A, 150°C, 1.6W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.6A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.12ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:1.6W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

SI2308CDS-T1-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

부분 #	제조	설명	재고	가격
SI2308CDS-T1-GE3 DISTI # V72:2272_21388861	Vishay Intertechnologies	N-Channel 60 V (D-S) MOSFET	3582	75000:$0.0859 30000:$0.0875 15000:$0.0889 6000:$0.0903 3000:$0.0919 1000:$0.1067 500:$0.1377 250:$0.1625 100:$0.1805 50:$0.2170 25:$0.2652 10:$0.2946 1:$0.4389
SI2308CDS-T1-GE3 DISTI # V99:2348_21388861	Vishay Intertechnologies	N-Channel 60 V (D-S) MOSFET	0
SI2308CDS-T1-GE3 DISTI # V36:1790_21388861	Vishay Intertechnologies	N-Channel 60 V (D-S) MOSFET	0
SI2308CDS-T1-GE3 DISTI # SI2308CDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 60V 2.6A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2440In Stock	1000:$0.1236 500:$0.1648 100:$0.2198 10:$0.3230 1:$0.4000
SI2308CDS-T1-GE3 DISTI # SI2308CDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V 2.6A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2440In Stock	1000:$0.1236 500:$0.1648 100:$0.2198 10:$0.3230 1:$0.4000
SI2308CDS-T1-GE3 DISTI # SI2308CDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 2.6A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.0889 15000:$0.0967 6000:$0.1033 3000:$0.1100
SI2308CDS-T1-GE3 DISTI # 30287441	Vishay Intertechnologies	N-Channel 60 V (D-S) MOSFET	3582	75000:$0.0923 30000:$0.0941 15000:$0.0956 6000:$0.0971 3000:$0.0988 1000:$0.1147 500:$0.1480 250:$0.1747 100:$0.1940 71:$0.2333
SI2308CDS-T1-GE3 DISTI # SI2308CDS-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R (Alt: SI2308CDS-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
SI2308CDS-T1-GE3 DISTI # SI2308CDS-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2308CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0809 15000:$0.0829 9000:$0.0859 6000:$0.0889 3000:$0.0919
SI2308CDS-T1-GE3 DISTI # SI2308CDS-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R (Alt: SI2308CDS-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.0869 500:€0.0879 100:€0.0899 50:€0.0929 25:€0.1009 10:€0.1169 1:€0.1719
SI2308CDS-T1-GE3 DISTI # 59AC7474	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) MOSFET	0	50000:$0.0820 30000:$0.0910 20000:$0.0980 10000:$0.1100 5000:$0.1260 1:$0.1340
SI2308CDS-T1-GE3 DISTI # 78AC6535	Vishay Intertechnologies	MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W,Transistor Polarity:N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2232	1000:$0.1160 500:$0.1550 250:$0.1730 100:$0.1920 50:$0.2230 25:$0.2540 10:$0.2850 1:$0.4240
SI2308CDS-T1-GE3 DISTI # 78-SI2308CDS-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SOT-23 RoHS: Compliant	74377	1:$0.4200 10:$0.2820 100:$0.1900 500:$0.1530 1000:$0.1150 3000:$0.1050 6000:$0.0990 9000:$0.0930
SI2308CDS-T1-GE3 DISTI # 2932884	Vishay Intertechnologies	MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W RoHS: Compliant	2232	1000:$0.2080 500:$0.2260 250:$0.2830 100:$0.3600 25:$0.4950 5:$0.6090
SI2308CDS-T1-GE3 DISTI # 2932884	Vishay Intertechnologies	MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W	2232	500:£0.1210 250:£0.1500 100:£0.1520 25:£0.2440 5:£0.2540

SI2308CDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes