NSBA114EF3T5G

Mfr. #:: NSBA114EF3T5G
제조사:: ON Semiconductor
설명:: Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NSBA114EF3T5G 데이터 시트
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HTML Datasheet:: NSBA114EF3T5G Datasheet NSBA114EF3T5G Datasheet (P4-P6)NSBA114EF3T5G Datasheet (P7-P9)NSBA114EF3T5G Datasheet (P10-P12)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - 사전 바이어스

RoHS:: Y

구성:: 하나의

트랜지스터 극성:: PNP

일반적인 입력 저항:: 10 kOhms

일반적인 저항 비율:: 1

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-1123-3

컬렉터-이미터 전압 VCEO 최대:: 50 V

지속적인 수집가 전류:: 100 mA

피크 DC 수집기 전류:: 100 mA

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: NSBA114EF3

포장:: 릴

키:: 0.37 mm

길이:: 0.6 mm

너비:: 0.8 mm

상표:: 온세미컨덕터

상품 유형:: BJT - 양극성 트랜지스터 - 사전 바이어스

공장 팩 수량:: 8000

하위 카테고리:: 트랜지스터

Tags: NSBA114E, NSBA114, NSBA11, NSBA1, NSBA, NSB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NSBA114EF3T5G 설명

***Semiconductor: PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 10 k, 10 k

***et: Trans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R

***ark: Brt Transistor, 50V, 10K/10Kohm, Sot1123; Digital Transistor Polarity:single Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm Rohs Compliant: Yes

***th Star Micro: This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT1123 package which is designed for low power surface mount applications.

Market price

부분 #	제조	설명	재고	가격
NSBA114EF3T5G DISTI # NSBA114EF3T5G-ND	ON Semiconductor	TRANS PREBIAS PNP 254MW SOT1123 RoHS: Compliant Min Qty: 8000 Container: Tape & Reel (TR)	Temporarily Out of Stock	8000:$0.0977
NSBA114EF3T5G DISTI # NSBA114EF3T5G	ON Semiconductor	Trans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R (Alt: NSBA114EF3T5G) RoHS: Compliant Min Qty: 8000 Container: Tape and Reel	Europe - 0	8000:€0.1469 16000:€0.1109 32000:€0.1009 48000:€0.0899 80000:€0.0849
NSBA114EF3T5G DISTI # NSBA114EF3T5G	ON Semiconductor	Trans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R - Tape and Reel (Alt: NSBA114EF3T5G) RoHS: Compliant Min Qty: 16000 Container: Reel	Americas - 0	16000:$0.0779 32000:$0.0769 48000:$0.0759 80000:$0.0749 160000:$0.0739
NSBA114EF3T5G DISTI # 49X8912	ON Semiconductor	BRT TRANSISTOR, 50V, 10K/10KOHM, SOT1123,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:10kohm RoHS Compliant: Yes	0	5000:$0.1070 2500:$0.1260 1000:$0.1550 500:$0.1820 250:$0.2160 100:$0.2580 50:$0.3090 1:$0.4030
NSBA114EF3T5G DISTI # 01P5096	ON Semiconductor	BRT TRANSISTOR, 50V, 10K/10KOHM, SOT1123, FULL REEL,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,RF Transistor Case:SOT-1123 RoHS Compliant: Yes	0	1:$0.1200
NSBA114EF3T5G	ON Semiconductor	RoHS: Not Compliant	221500	1000:$0.0900 100:$0.1000 500:$0.1000 1:$0.1100 25:$0.1100
NSBA114EF3T5G DISTI # 863-NSBA114EF3T5G	ON Semiconductor	Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR RoHS: Compliant	8000	1:$0.3500 10:$0.2660 100:$0.1440 1000:$0.1080 2500:$0.0930 8000:$0.0870 24000:$0.0800 48000:$0.0770 96000:$0.0740

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