NXH160T120L2Q2F2SG

Mfr. #:: NXH160T120L2Q2F2SG
제조사:: ON Semiconductor
설명:: IGBT Modules PIM 1200V 160A SPLIT TNP IGBT
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NXH160T120L2Q2F2SG 데이터 시트
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ECAD Model:
추가 정보:: NXH160T120L2Q2F2SG 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 모듈

RoHS:: Y

기술:: 시

제품:: IGBT 실리콘 모듈

구성:: 스플릿-T

컬렉터-이미터 전압 VCEO 최대:: 600 V, 1200 V

수집기-이미터 포화 전압:: 1.47 V, 2.15 V

25C에서 연속 수집기 전류:: 100 A, 160 A

게이트-이미터 누설 전류:: 300 nA, 500 nA

Pd - 전력 손실:: 500 W

패키지/케이스:: Q2PACK

최소 작동 온도:: - 40 C

최대 작동 온도:: + 125 C

포장:: 쟁반

상표:: 온세미컨덕터

장착 스타일:: 프레스핏

최대 게이트 이미터 전압:: 20 V

상품 유형:: IGBT 모듈

공장 팩 수량:: 12

하위 카테고리:: IGBT

Tags: NXH1, NXH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NXH160T120L2Q2F2SG 설명

***emi: Power Integrated Module (PIM), IGBT 1200 V, 160 A and 600 V, 100 A

***ical: Trans IGBT Module N-CH 1200V 181A 500000mW 56-Pin Case 180AK Tray

***et: Transistor IGBT Module N-CH 1.2kV 160A ±20V Screw Tray

***ark: Igbt, Module, N-Ch, 1.2Kv, 160A; Transistor Polarity:n Channel; Dc Collector Current:160A; Collector Emitter Saturation Voltage Vce(On):2.15V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

NXH160T120L2Q2F2SG 추가 정보

Solutions for Energy Infrastructure: ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

NXH160T120L2Q2F2SG Power Integrated Module: On-Semiconductor NXH160T120L2Q2F2SG Power Integrated Module (PIM) contains a split T-type neutral point clamped three-level inverter. This module consists of two 160A/1200V half-bridge IGBTs with inverse diodes, two 100A/600V neutral point IGBTs with inverse diodes, and two neutral point 120A/600V rectifiers. The NXH160T120L2Q2F2SG module also includes two half-bridge 60A/1200V rectifiers and a Negative Temperature Co-efficient (NTC) thermistor. Typical applications include solar inverters and Uninterruptible Power Supplies (UPS).

Market price

부분 #	제조	설명	재고	가격
NXH160T120L2Q2F2SG DISTI # V99:2348_18980275	ON Semiconductor	PIM 1200V, 160A SPLIT TNP	12	12:$124.4000 1:$134.3600
NXH160T120L2Q2F2SG DISTI # NXH160T120L2Q2F2SGOS-ND	ON Semiconductor	PIM 1200V, 160A SPLIT TNP RoHS: Compliant Min Qty: 1 Container: Tray	9In Stock	1:$134.6400
NXH160T120L2Q2F2SG DISTI # 27057668	ON Semiconductor	PIM 1200V, 160A SPLIT TNP	12	1:$134.3600
NXH160T120L2Q2F2SG DISTI # NXH160T120L2Q2F2SG	ON Semiconductor	Split T-Type NPC Power Module 1200 V 160 A IGBT 600 V 100 A IGBT Tray - Trays (Alt: NXH160T120L2Q2F2SG) RoHS: Compliant Min Qty: 6000 Container: Tray	Americas - 0
NXH160T120L2Q2F2SG DISTI # 48AC1759	ON Semiconductor	IGBT, MODULE, N-CH, 1.2KV, 160A,Transistor Polarity:N Channel,DC Collector Current:160A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	12	100:$118.2000 50:$121.3100 25:$124.4200 10:$127.1000 5:$133.3100 1:$135.9800
NXH160T120L2Q2F2SG DISTI # 863-NXH160T120Q2F2SG	ON Semiconductor	IGBT Modules PIM 1200V 160A SPLIT TNP IGBT RoHS: Compliant	12	1:$134.6300 5:$131.9900 10:$125.8400 25:$123.1900
NXH160T120L2Q2F2SG DISTI # 1723299	ON Semiconductor	INTELLIGENT POWER MODULE 160A 1200V, PU	12	12:£93.9500
NXH160T120L2Q2F2SG DISTI # 2835629	ON Semiconductor	IGBT, MODULE, N-CH, 1.2KV, 160A RoHS: Compliant	12	1:$202.9000
NXH160T120L2Q2F2SG DISTI # 2835629	ON Semiconductor	IGBT, MODULE, N-CH, 1.2KV, 160A	12	10:£89.2900 5:£101.0000 1:£103.0000

NXH160T120L2Q2F2SG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes