IPP60R230P6XKSA1

IPP60R230P6XKSA1
Mfr. #:
IPP60R230P6XKSA1
제조사:
Infineon Technologies
설명:
MOSFET LOW POWER_LEGACY
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPP60R230P6XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
16.8 A
Rds On - 드레인 소스 저항:
207 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
31 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
126 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
키:
15.65 mm
길이:
10 mm
시리즈:
CoolMOS P6
트랜지스터 유형:
1 N-Channel
너비:
4.4 mm
상표:
인피니언 테크놀로지스
가을 시간:
6 ns
상품 유형:
MOSFET
상승 시간:
7 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
38 ns
일반적인 켜기 지연 시간:
12 ns
부품 번호 별칭:
IPP60R230P6XKSA1 SP001017064
단위 무게:
0.211644 oz
Tags
IPP60R2, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 16.8 A 230 mO 31 nC CoolMOS P6 Power Transistor - TO-220
***ical
Trans MOSFET N-CH 600V 16.8A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 600(Min)V 16.8A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220-3
***ark
Mosfet, N-Ch, 600V, 16.8A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:16.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.207Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 16.8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:16.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.207ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:126W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P6 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 16,8A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:16.8A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.207ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:126W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P6 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
부분 # 제조 설명 재고 가격
IPP60R230P6XKSA1
DISTI # IPP60R230P6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPP60R230P6XKSA1
    DISTI # SP001017064
    Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 16.8A 3-Pin TO-220 Tube (Alt: SP001017064)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€1.0389
    • 500:€1.0589
    • 100:€1.0749
    • 50:€1.0939
    • 25:€1.1719
    • 10:€1.4099
    • 1:€1.8109
    IPP60R230P6XKSA1
    DISTI # 726-IPP60R230P6XKSA1
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    100
    • 1:$2.4900
    • 10:$2.1100
    • 100:$1.6900
    • 500:$1.4800
    • 1000:$1.2300
    IPP60R230P6
    DISTI # 726-IPP60R230P6
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    0
      IPP60R230P6XKSA1
      DISTI # 2710007
      Infineon Technologies AGMOSFET, N-CH, 600V, 16.8A, TO-220
      RoHS: Compliant
      0
      • 1000:$1.7200
      • 500:$1.8200
      • 100:$1.9300
      • 10:$2.1700
      • 1:$2.3300
      IPP60R230P6XKSA1
      DISTI # 2710007
      Infineon Technologies AGMOSFET, N-CH, 600V, 16.8A, TO-2200
      • 500:£1.1000
      • 250:£1.2000
      • 100:£1.2800
      • 10:£1.5400
      • 1:£2.0100
      영상 부분 # 설명
      IPP60R230P6XKSA1

      Mfr.#: IPP60R230P6XKSA1

      OMO.#: OMO-IPP60R230P6XKSA1

      MOSFET LOW POWER_LEGACY
      IPP60R230P6

      Mfr.#: IPP60R230P6

      OMO.#: OMO-IPP60R230P6-1190

      MOSFET LOW POWER_LEGACY
      IPP60R230P6XKSA1

      Mfr.#: IPP60R230P6XKSA1

      OMO.#: OMO-IPP60R230P6XKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 600V TO220-3
      유효성
      재고:
      100
      주문 시:
      2083
      수량 입력:
      IPP60R230P6XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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