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F3L150R07W2E3B11BOMA1

F3L150R07W2E3B11BOMA1
Mfr. #:
F3L150R07W2E3B11BOMA1
제조사:
Infineon Technologies
설명:
IGBT MODULE VCES 600V 150A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
F3L150R07W2E3B11BOMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
제품 속성
속성 값
Tags
F3L150R0, F3L150, F3L15, F3L1, F3L
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 650V 150A 335000mW 20-Pin EASY2B-2 Tray
***ure Electronics
650 V, 150 A EasyPACK™ 2B 3-level phase leg IGBT module
***et Europe
Trans IGBT Module N-CH 650V 150A 14-pin EASY2B-2
***ronik
IGBT-modul 650V 150A EasyPack2B
***i-Key
IGBT MODULE VCES 600V 150A
***omponent
Infineon power module
***et
LOW POWER EASY
***ark
Igbt, Module, N-Ch, 650V, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.45V; Power Dissipation Pd:335W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 650V, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:335W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, MODULO, CA-N, 650V, 150A; Polarità Transistor:Canale N; Corrente di Collettore CC:150A; Tensione Saturaz Collettore-Emettitore Vce(on):1.45V; Dissipazione di Potenza Pd:335W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EasyPACK 2B 650V 3-level phase leg IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode, NTC and PressFIT Contact Technology | Summary of Features: Increased blocking voltage capability to 650V; Low inductive design; Low Switching Losses; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; PressFIT Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups
부분 # 제조 설명 재고 가격
F3L150R07W2E3B11BOMA1
DISTI # V99:2348_17558352		Infineon Technologies AGTrans IGBT Module N-CH 650V 150A 335000mW 20-Pin Tray
RoHS: Compliant		15
  • 100:$59.1100
  • 25:$64.0000
  • 10:$71.1100
  • 1:$79.0100
F3L150R07W2E3B11BOMA1
DISTI # F3L150R07W2E3B11BOMA1-ND		Infineon Technologies AGIGBT MODULE VCES 600V 150A
RoHS: Not compliant
Min Qty: 15
Container: Bulk		Temporarily Out of Stock
  • 15:$65.2260
F3L150R07W2E3B11BOMA1
DISTI # 30177381		Infineon Technologies AGTrans IGBT Module N-CH 650V 150A 335000mW 20-Pin Tray
RoHS: Compliant		15
  • 15:$56.3880
F3L150R07W2E3B11BOMA1
DISTI # 32347530		Infineon Technologies AGTrans IGBT Module N-CH 650V 150A 335000mW 20-Pin Tray
RoHS: Compliant		15
  • 100:$59.1100
  • 25:$64.0000
  • 10:$71.1100
  • 1:$79.0100
F3L150R07W2E3B11BOMA1
DISTI # F3L150R07W2E3B11BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: F3L150R07W2E3B11BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray		Americas - 0
    F3L150R07W2E3_B11
    DISTI # 641-F3L150R07W2E3B11    		Infineon Technologies AGIGBT Modules IGBT MODULES 650V 150A54
    • 1:$68.6600
    • 5:$67.3900
    • 10:$65.6500
    • 25:$64.3600
    F3L150R07W2E3B11BOMA1
    DISTI # 2709947    		Infineon Technologies AGIGBT, MODULE, N-CH, 650V, 150A0
    • 50:£49.2700
    • 10:£50.3200
    • 5:£51.3700
    • 1:£52.4200
    F3L150R07W2E3B11BOMA1
    DISTI # 2709947    		Infineon Technologies AGIGBT, MODULE, N-CH, 650V, 150A
    RoHS: Compliant    		0
    • 5:$92.3200
    • 2:$95.6200
    • 1:$99.1700
    영상 부분 # 설명
    F3L150R07W2E3_B11

    Mfr.#: F3L150R07W2E3_B11

    OMO.#: OMO-F3L150R07W2E3-B11

    		 IGBT Modules IGBT MODULES 650V 150A
    F3L150R07W2E3B11BOMA1

    Mfr.#: F3L150R07W2E3B11BOMA1

    OMO.#: OMO-F3L150R07W2E3B11BOMA1-INFINEON-TECHNOLOGIES

    		 IGBT MODULE VCES 600V 150A
    F3L150R07W2E3-B11

    Mfr.#: F3L150R07W2E3-B11

    OMO.#: OMO-F3L150R07W2E3-B11-1190

    		 신규 및 오리지널
    F3L150R07W2E3_B11 , 1KSM

    Mfr.#: F3L150R07W2E3_B11 , 1KSM

    OMO.#: OMO-F3L150R07W2E3-B11-1KSM-1190

    		 신규 및 오리지널
    F3L150R07W2E3_B11-ENG

    Mfr.#: F3L150R07W2E3_B11-ENG

    OMO.#: OMO-F3L150R07W2E3-B11-ENG-1190

    		 신규 및 오리지널
    F3L150R07W2E3_B11

    Mfr.#: F3L150R07W2E3_B11

    OMO.#: OMO-F3L150R07W2E3-B11-125

    		 IGBT Modules IGBT MODULES 650V 150A
    유효성
    재고:
    Available
    주문 시:
    2000
    수량 입력:
    F3L150R07W2E3B11BOMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$77.56
    US$77.56
    10
    US$73.68
    US$736.79
    100
    US$69.80
    US$6 980.08
    500
    US$65.92
    US$32 961.50
    1000
    US$62.05
    US$62 045.20
    시작
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