SI7716ADN-T1-GE3

Mfr. #:: SI7716ADN-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 30V 16A 1212-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI7716ADN-T1-GE3 데이터 시트
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추가 정보:: SI7716ADN-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI7716ADN-GE3

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR 1212-8

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: PowerPAKR 1212-8

구성: 싱글 쿼드 드레인 트리플 소스

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 27.7W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 846pF @ 15V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 16A (Tc)

Rds-On-Max-Id-Vgs: 13.5 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 23nC @ 10V

Pd 전력 손실: 3.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 10 ns

상승 시간: 12 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 16 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 13.5 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 14 ns

일반 켜기 지연 시간: 15 ns

순방향 트랜스컨덕턴스-최소: 24 S

채널 모드: 상승

Tags: SI7716ADN-T1-G, SI7716ADN-T1, SI7716ADN-T, SI7716AD, SI7716A, SI7716, SI771, SI77, SI7

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7716ADN-T1-GE3 설명

***ure Electronics: Single N-Channel 30 V 0.0135 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8

***ark: Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,30V,16A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:20V

SI7716ADN-T1-GE3 추가 정보

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Market price

부분 #	제조	설명	재고	가격
SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 16A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3000In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 16A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3000In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 16A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4500
SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R (Alt: SI7716ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7716ADN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4399 6000:$0.4389 12000:$0.4369 18000:$0.4359 30000:$0.4349
SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R (Alt: SI7716ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.8369 6000:€0.6009 12000:€0.4869 18000:€0.4309 30000:€0.4119
SI7716ADN-T1-GE3 DISTI # 18X0024	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 16A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V , RoHS Compliant: Yes	0	1:$1.2600 10:$1.0400 25:$0.9580 50:$0.8760 100:$0.7940 500:$0.6820 1000:$0.5390
SI7716ADN-T1-GE3. DISTI # 28AC2175	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.5060 3000:$0.5030
SI7716ADN-T1-GE3 DISTI # 781-SI7716ADN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	3564	1:$1.2600 10:$1.0400 100:$0.7940 500:$0.6820 1000:$0.5390 3000:$0.5030 6000:$0.4780 9000:$0.4670
SI7716ADN-T1-GE3	Vishay Siliconix		6012
SI7716ADN-T1-GE3	Vishay Intertechnologies		50
SI7716ADNT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI7716ADN-T1-GE3 DISTI # C1S803601064529	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant	2998	3000:$0.4952
SI7716ADN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas -
SI7716ADN-T1-GE3 DISTI # 2478976	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 16A POWERPAK, FULL REEL RoHS: Compliant	0	3000:$0.7370
SI7716ADN-T1-GE3 DISTI # 1840425	Vishay Intertechnologies	MOSFET,N CH,30V,16A,POWERPAK8 RoHS: Compliant	0	5:£0.5780 25:£0.5690 100:£0.5610 250:£0.5490 500:£0.5290

영상	부분 #	설명
	Mfr.#: SI7716ADN-T1-GE3 OMO.#: OMO-SI7716ADN-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7716ADN OMO.#: OMO-SI7716ADN-1190	신규 및 오리지널
	Mfr.#: SI7716ADN-T1-E3 OMO.#: OMO-SI7716ADN-T1-E3-1190	신규 및 오리지널
	Mfr.#: SI7716ADN-T1-GE3 OMO.#: OMO-SI7716ADN-T1-GE3-VISHAY	MOSFET N-CH 30V 16A 1212-8
	Mfr.#: SI7716ADN-T1-GE3.. OMO.#: OMO-SI7716ADN-T1-GE3--1190	신규 및 오리지널
	Mfr.#: SI7716ADN-T1-GE3CT OMO.#: OMO-SI7716ADN-T1-GE3CT-1190	신규 및 오리지널
	Mfr.#: SI7716ADN-TI-GE3 OMO.#: OMO-SI7716ADN-TI-GE3-1190	신규 및 오리지널
	Mfr.#: SI7716ADNT1GE3 OMO.#: OMO-SI7716ADNT1GE3-1190	Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI7716ADN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes