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AS4C8M32MD2A-25BCNTR

AS4C8M32MD2A-25BCNTR
Mfr. #:
AS4C8M32MD2A-25BCNTR
제조사:
Alliance Memory
설명:
DRAM 256M 1.2/1.8V 8Mx32 LPDDR2 -25C-95C
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
AS4C8M32MD2A-25BCNTR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
AS4C8M32MD2A-25BCNTR 추가 정보
제품 속성
속성 값
제조사:
얼라이언스 메모리
제품 카테고리:
적은 양
RoHS:
Y
유형:
SDRAM Mobile - LPDDR2
데이터 버스 폭:
32 bit
조직:
8 M x 32
패키지/케이스:
FBGA-134
메모리 크기:
256 Mbit
최대 클록 주파수:
400 MHz
공급 전압 - 최대:
1.95 V
공급 전압 - 최소:
1.14 V
공급 전류 - 최대:
140 mA
최소 작동 온도:
- 25 C
최대 작동 온도:
+ 85 C
시리즈:
AS4C8M32MD2A-25
포장:
릴
상표:
얼라이언스 메모리
장착 스타일:
SMD/SMT
습기에 민감한:
네
상품 유형:
적은 양
공장 팩 수량:
1000
하위 카테고리:
메모리 및 데이터 저장
Tags
AS4C8M32MD, AS4C8M32M, AS4C8M3, AS4C8, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR2 SDRAM
Alliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1 and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.
Low-Power DDR2 SDRAM
Alliance Memory Low-Power DDR2 SDRAM are high-speed CMOS and dynamic-access memory that are internally configured as a 8-bank memory device. These DDR2 SDRAM feature 4-bit pre-fetch DDR architecture, programmable READ and WRITE latencies, auto Temperature Compensated Self Refresh (TCSR), and clock stop capability. The DDR2 SDRAM reduces the number of input pins in the system by using a double data rate architecture on the Command/Address (CA) bus. This CA bus is used to transmit address, command, and bank information. These DDR2 SDRAM can achieve high-speed operation by using a double data rate architecture on the DQ (bidirectional/differential data bus) pins.
영상 부분 # 설명
AS4C8M32MD2A-25BCNTR

Mfr.#: AS4C8M32MD2A-25BCNTR

OMO.#: OMO-AS4C8M32MD2A-25BCNTR

 DRAM 256M 1.2/1.8V 8Mx32 LPDDR2 -25C-95C
AS4C8M32MD2A-25BPCN

Mfr.#: AS4C8M32MD2A-25BPCN

OMO.#: OMO-AS4C8M32MD2A-25BPCN

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Mfr.#: AS4C8M32MD2A-25BCN

OMO.#: OMO-AS4C8M32MD2A-25BCN

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 256M 8M X 32 LPDDR2 1.2V 168 POP Extended temp
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Mfr.#: AS4C8M32MD2A-25BCN

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 134-BALL FBGA (10X11.5X1.0)
유효성
재고:
Available
주문 시:
3500
수량 입력:
AS4C8M32MD2A-25BCNTR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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