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2SK1464

2SK1464
Mfr. #:
2SK1464
제조사:
Rochester Electronics, LLC
설명:
8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
2SK1464 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
산요
제품 카테고리
IC 칩
Tags
2SK146, 2SK14, 2SK1, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S
French Electronic Distributor since 1988
***icroelectronics
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
***ure Electronics
N-Channel 900 V 980 mOhm Flange Mount SuperMESH™ Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 9.2A I(D), 900V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ark
MOSFET, N CH, 900V, 9.2A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 900V, 8.6A, 1.3Ω, TO-3P
***et
Trans MOSFET N-CH 900V 8.6A 3-Pin(3+Tab) TO-3P Rail
***r Electronics
Power Field-Effect Transistor, 8.6A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***enic
900V 8.6A 1´Î@10V4.3A 240W 5V@250uA 25pF@25V N Channel 2.7nF@25V 55nC@10V -55¡Í~+150¡Í@(Tj) TO-3PN MOSFETs ROHS
***ark
QF 900V 1.3OHM TO3PN / TUBE ROHS COMPLIANT: YES
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ark
MOSFET Transistor, N Channel, 9 A, 900 V, 1.12 ohm, 10 V, 5 V
***emi
N-Channel QFET® MOSFET 900V, 9.0A, 1.4Ω
*** Source Electronics
MOSFET N-CH 900V 9A TO-3P / Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***(Formerly Allied Electronics)
IRFPF50PBF N-channel MOSFET Transistor, 6.7 A, 900 V, 3-Pin TO-247AC
***ure Electronics
Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-CHANNEL 900V - 1.1 OHM - 8A TO-220 ZENER PROTECTED SUPERMESH MOSFET
***ical
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CHANNEL MOSFET, 900V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.4 Ω, TO-220
***ure Electronics
N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:8A; Resistance, Rds On:1.12ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:32A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:205W; Power, Pd:205W; Resistance, Rds on Max:1.4ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:900V; Voltage, Vgs th Max:5V; Width, External:10.67mm
부분 # 제조 설명 재고 가격
2SK1464ON Semiconductor 
RoHS: Not Compliant		6645
  • 1000:$5.9200
  • 500:$6.2300
  • 100:$6.4900
  • 25:$6.7700
  • 1:$7.2900
2SK1464SANYO Semiconductor Co Ltd8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML32
  • 25:$9.2138
  • 5:$10.2375
  • 1:$13.6500
영상 부분 # 설명
2SK1399-L

Mfr.#: 2SK1399-L

OMO.#: OMO-2SK1399-L-1190

 신규 및 오리지널
2SK1580-T2

Mfr.#: 2SK1580-T2

OMO.#: OMO-2SK1580-T2-1190

 신규 및 오리지널
2SK1581-T2B-A

Mfr.#: 2SK1581-T2B-A

OMO.#: OMO-2SK1581-T2B-A-1190

 신규 및 오리지널
2SK1848-TB-E

Mfr.#: 2SK1848-TB-E

OMO.#: OMO-2SK1848-TB-E-1190

 신규 및 오리지널
2SK1936-01

Mfr.#: 2SK1936-01

OMO.#: OMO-2SK1936-01-1190

 신규 및 오리지널
2SK2158(M)-T2B

Mfr.#: 2SK2158(M)-T2B

OMO.#: OMO-2SK2158-M--T2B-1190

 신규 및 오리지널
2SK3492-TL-E

Mfr.#: 2SK3492-TL-E

OMO.#: OMO-2SK3492-TL-E-1190

 Trans MOSFET N-CH Si 60V 8A 3-Pin(2+Tab) TP-FA
2SK4065-DL-1EX

Mfr.#: 2SK4065-DL-1EX

OMO.#: OMO-2SK4065-DL-1EX-ON-SEMICONDUCTOR

 MOSFET N-CH 75V TO263-2
2SK782

Mfr.#: 2SK782

OMO.#: OMO-2SK782-1190

 신규 및 오리지널
2SK932-24-N-TB-E

Mfr.#: 2SK932-24-N-TB-E

OMO.#: OMO-2SK932-24-N-TB-E-1190

 신규 및 오리지널
유효성
재고:
Available
주문 시:
5500
수량 입력:
2SK1464의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$8.88
US$8.88
10
US$8.44
US$84.36
100
US$7.99
US$799.20
500
US$7.55
US$3 774.00
1000
US$7.10
US$7 104.00
시작
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