BSL314PEH6327XTSA1

BSL314PEH6327XTSA1
Mfr. #:
BSL314PEH6327XTSA1
제조사:
Infineon Technologies
설명:
IGBT Transistors MOSFET SMALL SIGNAL+P-CH
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSL314PEH6327XTSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
추가 정보:
BSL314PEH6327XTSA1 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
FET - 어레이
시리즈
Automotive, AEC-Q101, OptiMOS
포장
테이프 및 릴(TR)
부분 별칭
BSL314PE H6327 SP001101006
장착 스타일
SMD/SMT
패키지 케이스
SC-74, SOT-457
기술
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
PG-TSOP6-6
구성
듀얼
FET형
2 P-Channel (Dual)
파워맥스
500mW
트랜지스터형
1 P-Channel
드레인-소스 전압 Vdss
30V
입력-커패시턴스-Ciss-Vds
294pF @ 15V
FET 기능
Logic Level Gate, 4.5V Drive
Current-Continuous-Drain-Id-25°C
1.5A
Rds-On-Max-Id-Vgs
140 mOhm @ 1.5A, 10V
Vgs-th-Max-Id
2V @ 6.3μA
Gate-Charge-Qg-Vgs
2.9nC @ 10V
Pd 전력 손실
500 mW
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
2.8 ns 2.8 ns
상승 시간
3.9 ns 3.9 ns
Vgs 게이트 소스 전압
+/- 20 V
Id-연속-드레인-전류
- 1.5 A - 1.5 A
Vds-드레인-소스-고장-전압
- 30 V - 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 2 V
Rds-On-Drain-Source-Resistance
230 mOhms 230 mOhms
트랜지스터 극성
P-채널
일반 꺼짐 지연 시간
12.4 ns 12.4 ns
일반 켜기 지연 시간
5.1 ns 5.1 ns
Qg-Gate-Charge
- 0.7 nC - 0.7 nC
순방향 트랜스컨덕턴스-최소
3 S 3 S
채널 모드
상승
Tags
BSL314, BSL31, BSL3, BSL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual P-CH 30V 1.5A 6-Pin TSOP T/R
***ark
Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.5A; Product Range:-; Automotive Qualification Standard:-; Msl:- Rohs Compliant: Yes
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
부분 # 제조 설명 재고 가격
BSL314PEH6327XTSA1
DISTI # V72:2272_06391923
Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A Automotive 6-Pin TSOP T/R
RoHS: Compliant
0
    BSL314PEH6327XTSA1
    DISTI # V36:1790_06391923
    Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A Automotive 6-Pin TSOP T/R
    RoHS: Compliant
    0
      BSL314PEH6327XTSA1
      DISTI # BSL314PEH6327XTSA1-ND
      Infineon Technologies AGMOSFET 2P-CH 30V 1.5A 6TSOP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Limited Supply - Call
      • 3000:$0.2131
      BSL314PEH6327XTSA1
      DISTI # BSL314PEH6327XTSA1
      Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A 6-Pin TSOP T/R - Tape and Reel (Alt: BSL314PEH6327XTSA1)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.1439
      • 6000:$0.1379
      • 12000:$0.1329
      • 18000:$0.1289
      • 30000:$0.1269
      BSL314PEH6327XTSA1.
      DISTI # 31AC8225
      Infineon Technologies AGContinuous Drain Current Id:1.5A,Drain Source Voltage Vds:30V,Product Range:-,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
      • 18000:$0.1780
      • 6000:$0.1790
      • 1:$0.1800
      BSL314PEH6327XTSA1
      DISTI # 726-BSL314PEH6327XTS
      Infineon Technologies AGMOSFET SMALL SIGNAL+P-CH
      RoHS: Compliant
      0
      • 1:$0.5400
      • 10:$0.4520
      • 100:$0.2760
      • 1000:$0.2130
      • 3000:$0.1820
      • 9000:$0.1690
      • 24000:$0.1600
      • 45000:$0.1570
      영상 부분 # 설명
      BSL314PEH6327XTSA1

      Mfr.#: BSL314PEH6327XTSA1

      OMO.#: OMO-BSL314PEH6327XTSA1

      MOSFET SMALL SIGNAL+P-CH
      BSL314PEH6327

      Mfr.#: BSL314PEH6327

      OMO.#: OMO-BSL314PEH6327-1190

      신규 및 오리지널
      BSL314PEH6327XTSA1

      Mfr.#: BSL314PEH6327XTSA1

      OMO.#: OMO-BSL314PEH6327XTSA1-INFINEON-TECHNOLOGIES

      IGBT Transistors MOSFET SMALL SIGNAL+P-CH
      유효성
      재고:
      Available
      주문 시:
      2000
      수량 입력:
      BSL314PEH6327XTSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.24
      US$0.24
      10
      US$0.22
      US$2.24
      100
      US$0.21
      US$21.20
      500
      US$0.20
      US$100.10
      1000
      US$0.19
      US$188.40
      시작
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