RN4907,LF(CT

RN4907,LF(CT
Mfr. #:
RN4907,LF(CT
제조사:
Toshiba
설명:
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
RN4907,LF(CT 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
도시바
제품 카테고리:
양극성 트랜지스터 - 사전 바이어스
RoHS:
Y
트랜지스터 극성:
NPN, PNP
일반적인 입력 저항:
10 kOhms
일반적인 저항 비율:
0.213
장착 스타일:
SMD/SMT
패키지/케이스:
SOT-363-6
DC 수집기/기본 이득 hfe 최소:
80
컬렉터-이미터 전압 VCEO 최대:
50 V
지속적인 수집가 전류:
100 mA
Pd - 전력 손실:
200 mW
시리즈:
RN4907
포장:
이미터-베이스 전압 VEBO:
6 V
상표:
도시바
채널 수:
2 Channel
상품 유형:
BJT - 양극성 트랜지스터 - 사전 바이어스
공장 팩 수량:
3000
하위 카테고리:
트랜지스터
단위 무게:
0.000212 oz
Tags
RN4907, RN490, RN49, RN4
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANS PREBIAS NPN/PNP 50V US6
***
US6-PLN ACTIVE
***ical
Trans Digital BJT NPN 50V 100mA 200mW 6-Pin US T/R
***el Electronic
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***i-Key
TRANS 2NPN PREBIAS 0.2W US6
***
TRANS US6 PLN (LF) 200MW
***et
Trans Digital BJT NPN/PNP 50V 0.1A 6-Pin US Embossed T/R
***el Electronic
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***i-Key
TRANS NPN/PNP PREBIAS 0.2W US6
***et
Trans Digital BJT NPN 50V 0.1A 6-Pin US Embossed T/R
*** Electronics
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***i-Key
TRANS 2NPN PREBIAS 0.2W US6
***el Electronic
IC OPAMP GP 2 CIRCUIT 10UMAX
***
TRANS US6 PLN (LF) 200MW
***icontronic
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon
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MMDT5551 Series Dual NPN 160 V 200 mW Small Signal Transistor SMT - SOT-363
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Transistor Dual NPN 160V 0.2A SOT363-6 | Diodes Inc MMDT5551-7-F
***ical
Trans GP BJT NPN 160V 0.2A 200mW 6-Pin SOT-363 T/R
***eco
MMDT5551-7-F,BIPOLAR TRANSISTO R DUAL NPN SOT-363 ROHS 3K
***ment14 APAC
Transistor, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:200mW; DC
***nell
TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
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UMB10N Series 50 V 100 mA Surface Mount Dual PNP Digital Transistor - SC-88
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Trans Digital BJT PNP 50V 100mA 6-Pin UMT T/R
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Transistor DUAL UM6 PNP/PNP; Digital Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA;
***ark
TRANSISTOR DUAL UM6 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:150mW; Min Hfe:80; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
***nell
TRANSISTOR DUAL UM6 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMB10N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
***p One Stop Global
Trans Digital BJT PNP 50V 100mA 200mW Automotive 6-Pin SOT-363 T/R
***ca Corp
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
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DDA Series 50 V 100 mA Dual PNP Pre-Biased Small Signal Transistor - SOT-363
***(Formerly Allied Electronics)
Trans Digital BJT PNP 100mA 6Pin SOT363 | Diodes Inc DDA123JU-7-F
***ark
Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant: Yes |Diodes Inc. DDA123JU-7-F
부분 # 제조 설명 재고 가격
RN4907,LF
DISTI # RN4907LFCT-ND
Toshiba America Electronic ComponentsTRANS NPN/PNP PREBIAS 0.2W US6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    RN4907,LF(CT
    DISTI # 757-RN4907LF(CT
    Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
    RoHS: Compliant
    0
    • 1:$0.4200
    • 10:$0.2310
    • 100:$0.0990
    • 1000:$0.0760
    • 3000:$0.0580
    • 9000:$0.0520
    • 24000:$0.0480
    • 45000:$0.0430
    • 99000:$0.0410
    영상 부분 # 설명
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    신규 및 오리지널
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    신규 및 오리지널
    RN4907FELF(CTDKR-ND

    Mfr.#: RN4907FELF(CTDKR-ND

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    신규 및 오리지널
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    신규 및 오리지널
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    Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/ 1MH
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    OMO.#: OMO-RN4907-1190

    신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    2000
    수량 입력:
    RN4907,LF(CT의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.42
    US$0.42
    10
    US$0.23
    US$2.31
    100
    US$0.10
    US$9.90
    1000
    US$0.08
    US$76.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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