SI4090DY-T1-GE3

SI4090DY-T1-GE3
Mfr. #:
SI4090DY-T1-GE3
제조사:
Vishay
설명:
IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4090DY-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
비쉐이 실리콘
제품 카테고리
FET - 단일
시리즈
트렌치FETR
포장
Digi-ReelR 대체 패키징
부분 별칭
SI4090DY-GE3
단위 무게
0.017870 oz
장착 스타일
SMD/SMT
상표명
ThunderFET TrenchFET
패키지 케이스
8-SOIC (0.154", 3.90mm Width)
기술
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
8-SO
구성
하나의
FET형
MOSFET N-채널, 금속 산화물
파워맥스
7.8W
트랜지스터형
1 N-Channel
드레인-소스 전압 Vdss
100V
입력-커패시턴스-Ciss-Vds
2410pF @ 50V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
19.7A (Tc)
Rds-On-Max-Id-Vgs
10 mOhm @ 15A, 10V
Vgs-th-Max-Id
3.3V @ 250μA
Gate-Charge-Qg-Vgs
69nC @ 10V
Pd 전력 손실
7.8 W
Id-연속-드레인-전류
19.7 A
Vds-드레인-소스-고장-전압
100 V
Vgs-th-Gate-Source-Threshold-Voltage
3.3 V
Rds-On-Drain-Source-Resistance
10 mOhms
트랜지스터 극성
N-채널
Qg-Gate-Charge
27.9 nC
Tags
SI409, SI40, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 10 mOhm 7.8 W Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 100V 19.7A 8-Pin SOIC N T/R
***mal
N-Ch MOSFET SO-8 100V 10mohm @ 10V
***et
Trans MOSFET N-CH 100V 13.2A 8-Pin SO T/R
***nell
MOSFET, N-CH, 100V, 19.7A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:7.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
부분 # 제조 설명 재고 가격
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V 19.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
156In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V 19.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
156In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 19.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 2500:$0.6622
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 13.2A 8-Pin SO T/R (Alt: SI4090DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 12500
  • 2500:$9.4600
  • 5000:$6.5241
  • 7500:$4.8513
  • 12500:$3.9417
  • 25000:$3.5698
  • 62500:$3.4400
  • 125000:$3.3193
SI4090DY-T1-GE3
DISTI # 19X1960
Vishay IntertechnologiesMOSFET Transistor, N Channel, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V RoHS Compliant: Yes11795
  • 1:$1.5900
  • 10:$1.3200
  • 25:$1.2200
  • 50:$1.1300
  • 100:$1.0300
  • 500:$0.9010
  • 1000:$0.8020
SI4090DY-T1-GE3
DISTI # 78-SI4090DY-T1-GE3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
RoHS: Compliant
9
  • 1:$1.5100
  • 10:$1.2400
  • 100:$0.9510
  • 500:$0.8180
  • 1000:$0.7180
  • 2500:$0.7170
SI4090DY-T1-GE3
DISTI # 2364058
Vishay IntertechnologiesMOSFET, N-CH, 100V, 19.7A, SOIC-8
RoHS: Compliant
9640
  • 5:£1.0500
  • 25:£0.7120
  • 100:£0.6830
  • 250:£0.6330
  • 500:£0.5830
SI4090DY-T1-GE3
DISTI # 2364058
Vishay IntertechnologiesMOSFET, N-CH, 100V, 19.7A, SOIC-8
RoHS: Compliant
11795
  • 1:$2.4000
  • 10:$1.9700
  • 100:$1.5100
  • 500:$1.3000
  • 1000:$1.1400
  • 2500:$1.1400
SI4090DY-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
RoHS: Compliant
Americas -
  • 2500:$0.6030
  • 5000:$0.5790
  • 10000:$0.5580
영상 부분 # 설명
SI4090DY-T1-GE3

Mfr.#: SI4090DY-T1-GE3

OMO.#: OMO-SI4090DY-T1-GE3-VISHAY

IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
SI4090DY

Mfr.#: SI4090DY

OMO.#: OMO-SI4090DY-1190

신규 및 오리지널
SI4090DY-T1-E3

Mfr.#: SI4090DY-T1-E3

OMO.#: OMO-SI4090DY-T1-E3-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
2500
수량 입력:
SI4090DY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.84
US$0.84
10
US$0.80
US$7.95
100
US$0.75
US$75.33
500
US$0.71
US$355.75
1000
US$0.67
US$669.60
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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