RN2101MFV(TPL3)

Mfr. #:: RN2101MFV(TPL3)
제조사:: Toshiba
설명:: Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: RN2101MFV(TPL3) 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 양극성 트랜지스터 - 사전 바이어스

RoHS:: Y

구성:: 하나의

트랜지스터 극성:: PNP

일반적인 입력 저항:: 4.7 kOhms

일반적인 저항 비율:: 1

장착 스타일:: SMD/SMT

DC 수집기/기본 이득 hfe 최소:: 30

컬렉터-이미터 전압 VCEO 최대:: 50 V

지속적인 수집가 전류:: - 100 mA

피크 DC 수집기 전류:: 100 mA

Pd - 전력 손실:: 150 mW

최대 작동 온도:: + 150 C

시리즈:: RN2101MFV

포장:: 릴

DC 전류 이득 hFE 최대:: 30

상표:: 도시바

상품 유형:: BJT - 양극성 트랜지스터 - 사전 바이어스

공장 팩 수량:: 8000

하위 카테고리:: 트랜지스터

Tags: RN2101M, RN2101, RN210, RN21, RN2

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN2101MFV(TPL3) 설명

***et: Trans Digital BJT PNP 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS PNP 150MW VESM

***S: French Electronic Distributor since 1988

***ical: Trans Digital BJT PNP 50V 100mA 3-Pin VMT T/R

***ukat: PNP-Dig. 50V 0,1A 0,15W SOT723

***nell: DIGITAL TRANSISTOR, -0.1A, SOT-723; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 4.7kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-723; No. of Pins: 3 Pin; Product Range: DTA143E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: DTC143TM Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-105AA

***et: Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R

***nell: TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF

***ark: TRANSISTOR;DIGITAL;VMT3:NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:5mA; Voltage, Vce Sat Max:300mV; Power Dissipation:150mW; Min Hfe:100; ft,;RoHS Compliant: Yes

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

***ical: Trans Digital BJT PNP 50V 100mA 3-Pin VMT T/R

***ment14 APAC: DIGITAL Transistor, -0.1A, SOT-723; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Current

***nell: DIGITAL TRANSISTOR, -0.1A, SOT-723; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-723; No. of Pins: 3 Pin; Product Range: DTA114Y Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: X34 Pb-F VESM TRANSISTOR Pd 150mW F 1Mhz (LF)

***i-Key: TRANS PREBIAS PNP 150MW VESM

***et: Trans Digital BJT PNP 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS PNP 50V 0.1A VESM

***el Nordic: Contact for details

***et: Trans Digital BJT PNP 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS PNP 50V 0.1A VESM

***el Electronic: IC OPAMP GP 140KHZ RRO 14TSSOP

Market price

부분 #	제조	설명	재고	가격
RN2101MFV(TPL3) DISTI # RN2101MFV(TPL3)	Toshiba America Electronic Components	Trans Digital BJT PNP 50V 100mA 3-Pin VESM T/R - Tape and Reel (Alt: RN2101MFV(TPL3)) RoHS: Compliant Min Qty: 8000 Container: Reel	Americas - 0
RN2101MFV(TPL3) DISTI # 757-RN2101MFV(TPL3)	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms RoHS: Compliant	0

영상	부분 #	설명
	Mfr.#: RN2101MFV,L3F OMO.#: OMO-RN2101MFV-L3F	Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 4.7kohm
	Mfr.#: RN2101MFV(TPL3) OMO.#: OMO-RN2101MFV-TPL3-	Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
	Mfr.#: RN2101MFV(TPL3) OMO.#: OMO-RN2101MFV-TPL3--123	Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
	Mfr.#: RN2101MFVL3XGF OMO.#: OMO-RN2101MFVL3XGF-1190	신규 및 오리지널
	Mfr.#: RN2101MFV(TL3PAV) OMO.#: OMO-RN2101MFV-TL3PAV--1190	신규 및 오리지널

RN2101MFV(TPL3)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes