STGB20NB41LZT4

Mfr. #:: STGB20NB41LZT4
제조사:: STMicroelectronics
설명:: IGBT Transistors N-Ch Clamped 20 Amp
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: STGB20NB41LZT4 데이터 시트
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HTML Datasheet:: STGB20NB41LZT4 Datasheet STGB20NB41LZT4 Datasheet (P4-P6)STGB20NB41LZT4 Datasheet (P7-P9)
ECAD Model:
추가 정보:: STGB20NB41LZT4 추가 정보 STGB20NB41LZT4 Product Details

제품 속성
속성 값

제조사:: ST마이크로일렉트로닉스

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: D2PAK-3

장착 스타일:: SMD/SMT

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 20 V

수집기-이미터 포화 전압:: 2 V

최대 게이트 이미터 전압:: 12 V

25C에서 연속 수집기 전류:: 40 A

Pd - 전력 손실:: 200 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: STGB20NB41LZ

자격:: AEC-Q101

포장:: 릴

연속 수집가 현재 IC 최대:: 40 A

키:: 4.6 mm

길이:: 10.4 mm

너비:: 9.35 mm

상표:: ST마이크로일렉트로닉스

지속적인 수집가 전류:: 20 A

게이트-이미터 누설 전류:: +/- 660 uA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 1000

하위 카테고리:: IGBT

상표명:: 파워메시

단위 무게:: 0.079014 oz

Tags: STGB20NB4, STGB20NB, STGB20N, STGB20, STGB2, STGB, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGB20NB41LZT4 설명

***ical: Trans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 442 V 20 A Surface Mount Internally Clamped PowerMESH IGBT-D2PAK

***nell: IGBT, SINGLE, 412KV, 40A, TO-263-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 412V; Transistor Case Style: TO-263; No. of Pi

***ark: N CHANNEL IGBT, PowerMESH, CLAMPED, 40A, D2PAK, FULL REEL; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:200W; Collector Emitter Voltage Max:412V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 375V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: STGB Series 425 Vce 40 A 2.3 us t(on) N-Channel PowerMESH IGBT - TO-263

***icroelectronics: 20 A, 400 V internally clamped IGBT

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch Clamped 20 Amp

*** Electronic Components: IGBT Transistors N-Ch Clamped 20 Amp

***ronik: IGBT CLAMP 400V 20A 1,8V TO263

***et: STMICROELECTRONICS STGB20NB37LZT4

***el Electronic: DIODE ARRAY GP 300V 15A TO247-3

***nell: IGBT, SMD, 400V, 20A, D2-PAK; Transistor type:PowerMESH; Voltage, Vces:400V; Current, Ic continuous a max:40A; Voltage, Vce sat max:2V; Power dissipation:200W; Case style:D2-PAK; Current, Icm pulsed:80A; Pins, No. of:3; Termination Type:SMD; Time, fall:11500ns; Time, rise:600ns; Transistor polarity:N

***p One Stop Global: Trans IGBT Chip N-CH 380V 40A Automotive 3-Pin(2+Tab) D2PAK T/R

***icroelectronics: Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 380V V(BR)CES, N-Channel, TO-263AA

*** Electronic Components: IGBT Transistors EAS 350 mJ 350 V Int clamped IGBT

***et: STMICROELECTRONICS STGB35N35LZT4 IGBTS

***ical: Trans IGBT Chip N-CH 390V 25A 150000mW Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: STGB20N40LZ Series 390 V 25 A Automotive-Grade Internally Clamped IGBT -D2PAK-3

***icroelectronics: Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ

***icroelectronics SCT: Automotive-grade internally clamped IGBT, D2PAK, Tape and Reel

***(Formerly Allied Electronics): IGBT N-Ch 390V 25A PowerMESH 300mJ D2PAK

***ical: Trans IGBT Chip N=-CH 600V 40A 208000mW 3-Pin(2+Tab) D2PAK T/R

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,600V,20A,D2PAK; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W

***et: Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB

***ark: TAPE REEL/N-ch / 20A 600V IGBT

***nell: FAST & ULTRAFAST RECOVERY RECTIFIERS;

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB

***nell: IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3; DC Collector Current: 35A; Collector Emitter Saturation Voltage Vce(on): 2.45V; Power Dissipation Pd: 298W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

Market price

부분 #	제조	설명	재고	가격
STGB20NB41LZT4 DISTI # V72:2272_17691836	STMicroelectronics	Trans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	994	500:$2.2340 250:$2.8080 100:$2.8390 25:$3.3520 10:$3.3910 1:$3.7200
STGB20NB41LZT4 DISTI # 497-4351-1-ND	STMicroelectronics	IGBT 442V 40A 200W D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2146In Stock	500:$2.7827 100:$3.2688 10:$3.9900 1:$4.4400
STGB20NB41LZT4 DISTI # 497-4351-6-ND	STMicroelectronics	IGBT 442V 40A 200W D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2146In Stock	500:$2.7827 100:$3.2688 10:$3.9900 1:$4.4400
STGB20NB41LZT4 DISTI # 497-4351-2-ND	STMicroelectronics	IGBT 442V 40A 200W D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	2000:$2.1700 1000:$2.2785
STGB20NB41LZT4 DISTI # 26199322	STMicroelectronics	Trans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	2000:$2.1874 1000:$2.2968
STGB20NB41LZT4 DISTI # 25929241	STMicroelectronics	Trans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	994	500:$2.2340 250:$2.8080 100:$2.8390 25:$3.3520 10:$3.3910 4:$3.7200
STGB20NB41LZT4 DISTI # STGB20NB41LZT4	STMicroelectronics	Trans IGBT Chip N-CH 382V 40A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB20NB41LZT4) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 6000	1:€5.3500 25:€4.0600 100:€3.5400 250:€3.0900 500:€2.0200
STGB20NB41LZT4 DISTI # STGB20NB41LZT4	STMicroelectronics	Trans IGBT Chip N-CH 382V 40A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STGB20NB41LZT4) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.2900 2000:$2.1900 4000:$2.0900 6000:$1.9900 10000:$1.8900
STGB20NB41LZT4 DISTI # 33X1197	STMicroelectronics	IGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 , RoHS Compliant: Yes	437	1:$4.4400 10:$3.9900 100:$3.2700 500:$2.7800
STGB20NB41LZT4 DISTI # 511-STGB20NB41LZ	STMicroelectronics	IGBT Transistors N-Ch Clamped 20 Amp RoHS: Compliant	0	1000:$2.1700
STGB20NB41LZT4 DISTI # STGB20NB41LZ	STMicroelectronics	382V 40A 200W DPak RoHS: Compliant	970	10:€1.5600 50:€1.3600 200:€1.2600 500:€1.2000
STGB20NB41LZT4	STMicroelectronics	INSTOCK	1000
STGB20NB41LZT4 DISTI # 2353662	STMicroelectronics	IGBT, SINGLE, 412KV, 40A, TO-263-3 RoHS: Compliant	437	1:$7.0300 10:$6.3200 100:$5.1800 500:$4.4100
STGB20NB41LZT4 DISTI # C1S730200220417	STMicroelectronics	Trans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.5800
STGB20NB41LZT4 DISTI # C1S730200437080	STMicroelectronics	Trans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	994	250:$2.8010 100:$2.8310 25:$3.3380 10:$3.3770 1:$3.6980
STGB20NB41LZT4 DISTI # 2353662	STMicroelectronics	IGBT, SINGLE, 412KV, 40A, TO-263-3 RoHS: Compliant	437	1:£3.1400 10:£2.0300 100:£1.8500 250:£1.6700 500:£1.4900

영상	부분 #	설명
	Mfr.#: STGB30H60DLFB OMO.#: OMO-STGB30H60DLFB	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	Mfr.#: ISL9V5045S3ST-F085 OMO.#: OMO-ISL9V5045S3ST-F085	IGBT Transistors 500mJ, 450V EcoSPARK N-Chan Ignition IGBT
	Mfr.#: ERG-2SJ220 OMO.#: OMO-ERG-2SJ220-PANASONIC	Metal Oxide Resistors 22 OHM 5% 300PPM 2W
	Mfr.#: ISL9V5045S3ST-F085 OMO.#: OMO-ISL9V5045S3ST-F085-ON-SEMICONDUCTOR	IGBT 480V 51A 300W D2PAK
	Mfr.#: STGB30H60DLFB OMO.#: OMO-STGB30H60DLFB-STMICROELECTRONICS	TRENCH GATE FIELD-STOP IGBT, HB
	Mfr.#: B32932A3104K000 OMO.#: OMO-B32932A3104K000-EPCOS	CAP FILM 0.1UF 10% 305VAC RADIAL

STGB20NB41LZT4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes