BSC025N03MS G

BSC025N03MS G
Mfr. #:
BSC025N03MS G
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSC025N03MS G 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
BSC025N03MS G 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TDSON-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
40 A
Rds On - 드레인 소스 저항:
6.7 mOhms
Vgs th - 게이트 소스 임계 전압:
1 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
27 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
35 W
구성:
하나의
채널 모드:
상승
상표명:
옵티모스
포장:
키:
1.27 mm
길이:
5.9 mm
시리즈:
OptiMOS 3M
트랜지스터 유형:
1 N-Channel
너비:
5.15 mm
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
28 S
가을 시간:
2.4 ns
상품 유형:
MOSFET
상승 시간:
3 ns
공장 팩 수량:
5000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
18 ns
일반적인 켜기 지연 시간:
4.3 ns
부품 번호 별칭:
BSC025N03MSGATMA1 BSC25N3MSGXT SP000311505
Tags
BSC025N03MSG, BSC025N03M, BSC025, BSC02, BSC0, BSC
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
부분 # 제조 설명 재고 가격
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  • 100:$0.6444
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  • 10:$0.8015
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  • 100:$0.7943
  • 50:$0.9103
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  • 1000:$0.4708
  • 500:$0.5734
  • 250:$0.6372
  • 100:$0.6444
  • 25:$0.7919
  • 18:$0.8015
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  • 10000:$0.4029
  • 20000:$0.3889
  • 30000:$0.3759
  • 50000:$0.3689
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DISTI # BSC025N03MS G
Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON T/R (Alt: BSC025N03MS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
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    • 1:$1.2000
    • 10:$1.0200
    • 100:$0.7820
    • 500:$0.6910
    • 1000:$0.5460
    • 2500:$0.5060
    • 10000:$0.4660
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    • 100:$0.5200
    • 25:$0.5400
    • 1:$0.5800
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      DISTI # 1775433
      Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
      RoHS: Compliant
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      • 1:$1.9100
      • 10:$1.6200
      • 100:$1.2400
      • 500:$1.1000
      • 1000:$0.8650
      • 5000:$0.7820
      BSC025N03MSGInfineon Technologies AG30V,100A,N-channel power MOSFET100
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      BSC025N03MS G
      DISTI # C1S322000085833
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      RoHS: Compliant
      5000
      • 500:$0.5320
      • 200:$0.6040
      • 100:$0.6230
      • 50:$0.7140
      • 10:$1.0600
      • 5:$1.3000
      BSC025N03MSGATMA1
      DISTI # C1S322000210776
      Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
      RoHS: Compliant
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      • 250:$0.5806
      • 100:$0.6451
      • 25:$0.8038
      • 10:$0.8077
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      DISTI # C1S322000470943
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      RoHS: Compliant
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      • 5000:$0.4730
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      • 5:£0.5910
      • 25:£0.5380
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      • 250:£0.4240
      • 500:£0.4230
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      Surface Mount Fuses 125V 7A
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      OMO.#: OMO-5796055-2-TE-CONNECTIVITY

      Headers & Wire Housings 68 CHAMP R/A ASSY LC 68 RECPT R/A ASSY HD
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      유효성
      재고:
      Available
      주문 시:
      1986
      수량 입력:
      BSC025N03MS G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.19
      US$1.19
      10
      US$1.01
      US$10.10
      100
      US$0.78
      US$78.20
      500
      US$0.69
      US$345.50
      1000
      US$0.55
      US$546.00
      시작
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