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IRFBA90N20DPBF

IRFBA90N20DPBF
Mfr. #:
IRFBA90N20DPBF
제조사:
Infineon Technologies
설명:
MOSFET N-CH 200V 98A SUPER-220
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFBA90N20DPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IRFBA90N20DPBF 추가 정보
제품 속성
속성 값
제조사
국제 정류기
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
튜브
단위 무게
0.211644 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-220-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
650 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
가을철
77 ns
상승 시간
160 ns
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
98 A
Vds-드레인-소스-고장-전압
200 V
Rds-On-Drain-Source-Resistance
23 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
39 ns
일반 켜기 지연 시간
23 ns
Qg-Gate-Charge
160 nC
순방향 트랜스컨덕턴스-최소
41 S
채널 모드
상승
Tags
IRFBA, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package, SUPER220-3, RoHS
***ark
Trans Mosfet N-Ch 200V 98A 3-Pin(3+Tab) To-273Aa Rohs Compliant: Yes
***ure Electronics
Single N-Channel 200 V 0.023 Ohm 160 nC HEXFET® Power Mosfet - SBM-2
***eco
IRFBA90N20DPBF,MOSFET, 200V, 9 8A, 23 MOHM, 160 NC QG, TO-27
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
부분 # 제조 설명 재고 가격
IRFBA90N20DPBF
DISTI # IRFBA90N20DPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 98A SUPER-220
RoHS: Compliant
Min Qty: 1
Container: Tube		2In Stock
  • 1000:$3.8889
  • 500:$4.4651
  • 100:$5.3293
  • 50:$5.9054
  • 1:$7.2000
IRFBA90N20DPBF
DISTI # IRFBA90N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA (Alt: IRFBA90N20DPBF)
RoHS: Compliant
Min Qty: 3000		Asia - 50
  • 3000:$3.4917
  • 6000:$3.3254
  • 9000:$3.2734
  • 15000:$3.1269
  • 30000:$3.0809
  • 75000:$2.9929
  • 150000:$2.9097
IRFBA90N20DPBF
DISTI # IRFBA90N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA - Rail/Tube (Alt: IRFBA90N20DPBF)
RoHS: Compliant
Min Qty: 150
Container: Tube		Americas - 0
  • 150:$2.9900
  • 250:$2.8900
  • 400:$2.7900
  • 750:$2.6900
  • 1500:$2.5900
IRFBA90N20DPBF
DISTI # SP001551776		Infineon Technologies AGTrans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA (Alt: SP001551776)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€6.9805
  • 25:€6.1180
  • 100:€5.2785
  • 250:€4.6000
  • 1000:€4.1515
IRFBA90N20DPBF.
DISTI # 82AC5173		Infineon Technologies AGTRANS MOSFET N-CH 200V 98A 3-PIN(3+TAB) TO-273AA0
  • 1:$2.9900
  • 250:$2.8900
  • 400:$2.7900
  • 750:$2.6900
  • 1500:$2.5900
IRFBA90N20DPBF
DISTI # 70018297		Infineon Technologies AGIRFBA90N20DPBF N-channel MOSFET Transistor,98 A,200 V,3-Pin TO-273AA
RoHS: Compliant		0
  • 150:$14.0300
IRFBA90N20DPBFInfineon Technologies AGPower Field-Effect Transistor, 95A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA
RoHS: Compliant		20
  • 1000:$3.4500
  • 500:$3.6300
  • 100:$3.7800
  • 25:$3.9400
  • 1:$4.2400
IRFBA90N20DPBF
DISTI # 942-IRFBA90N20DPBF		Infineon Technologies AGMOSFET MOSFT 200V 98A 23mOhm 160nC
RoHS: Compliant		0
  • 1:$6.2300
  • 10:$5.6400
  • 50:$5.3700
  • 100:$4.6700
  • 250:$4.4600
IRFBA90N20DPBFInternational Rectifier 
RoHS: Compliant		Europe - 50
    IRFBA90N20DPBF.
    DISTI # 2132413    		Infineon Technologies AGN CH MOSFET, 200V, 98A, SUPER-220
    RoHS: Compliant    		0
    • 1:£5.0000
    • 10:£4.5000
    • 25:£4.3000
    • 50:£4.0100
    • 100:£3.9400
    IRFBA90N20DPBF
    DISTI # XSLY00000000943    		Infineon Technologies AGTO-273AA (Super-220)
    RoHS: Compliant    		288
    • 150:$4.1900
    • 288:$3.9100
    IRFBA90N20DPBF
    DISTI # XSFP00000020578    		Infineon Technologies AGPowerField-EffectTransistor,95AI(D),200V,0.023ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-273AA
    RoHS: Compliant    		67
    • 50:$4.7100
    • 67:$4.4100
    IRFBA90N20DPBF
    DISTI # 8658030    		Infineon Technologies AGMOSFET, N, 200V, 98A, SUPER 220
    RoHS: Compliant    		0
    • 1:$9.8600
    • 10:$8.9300
    • 50:$8.5000
    • 100:$7.4000
    • 250:$7.0600
    영상 부분 # 설명
    IRFBA90N20DPBF

    Mfr.#: IRFBA90N20DPBF

    OMO.#: OMO-IRFBA90N20DPBF

    		 MOSFET MOSFT 200V 98A 23mOhm 160nC
    IRFBA90N20D

    Mfr.#: IRFBA90N20D

    OMO.#: OMO-IRFBA90N20D-1190

    		 98A, 200V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET
    IRFBA90N20DPBF

    Mfr.#: IRFBA90N20DPBF

    OMO.#: OMO-IRFBA90N20DPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 98A SUPER-220
    유효성
    재고:
    Available
    주문 시:
    2500
    수량 입력:
    IRFBA90N20DPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.88
    US$3.88
    10
    US$3.69
    US$36.91
    100
    US$3.50
    US$349.65
    500
    US$3.30
    US$1 651.15
    1000
    US$3.11
    US$3 108.00
    시작
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