FDMS0306AS

FDMS0306AS
Mfr. #:
FDMS0306AS
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET PT8 N 30/20 SYNCFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDMS0306AS 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
Power-56-8
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
26 A
Rds On - 드레인 소스 저항:
2 mOhms
Vgs th - 게이트 소스 임계 전압:
1.7 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
41 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
2.5 W
구성:
하나의
채널 모드:
상승
상표명:
PowerTrench SyncFET
포장:
키:
1.1 mm
길이:
6 mm
시리즈:
FDMS0306AS
너비:
5 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
168 S
가을 시간:
4 ns
상품 유형:
MOSFET
상승 시간:
5 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
32 ns
일반적인 켜기 지연 시간:
12 ns
단위 무게:
0.002402 oz
Tags
FDMS030, FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***roFlash
Single N-Channel 30 V 2.95 mOhm 59 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6
***ical
Trans MOSFET N-CH 30V 27A 8-Pin QFN EP T/R
***Yang
Trans MOSFET N-CH 30V 27A 8-Pin PQFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8
***nell
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ure Electronics
Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
*** Electronics
MOSFET 30 Volts 50 Amps 69 Watts
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ical
Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
부분 # 제조 설명 재고 가격
FDMS0306AS
DISTI # 31022485
ON SemiconductorSINGLE PT8 N 30/20 SYNCFET3000
  • 3000:$0.5158
FDMS0306AS
DISTI # 31234741
ON SemiconductorSINGLE PT8 N 30/20 SYNCFET3000
  • 6000:$0.4825
  • 3000:$0.5388
FDMS0306AS
DISTI # FDMS0306ASCT-ND
ON SemiconductorMOSFET N-CH 30V 26A PT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMS0306AS
    DISTI # FDMS0306ASDKR-ND
    ON SemiconductorMOSFET N-CH 30V 26A PT8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMS0306AS
      DISTI # FDMS0306ASTR-ND
      ON SemiconductorMOSFET N-CH 30V 26A PT8
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.4905
      FDMS0306AS
      DISTI # FDMS0306AS
      ON SemiconductorTrans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0306AS)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.4159
      • 6000:$0.4129
      • 12000:$0.4079
      • 18000:$0.4029
      • 30000:$0.3929
      FDMS0306AS
      DISTI # FDMS0306AS
      ON SemiconductorTrans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R (Alt: FDMS0306AS)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
      • 3000:€0.8389
      • 6000:€0.6529
      • 12000:€0.5419
      • 18000:€0.4569
      • 30000:€0.4229
      FDMS0306AS
      DISTI # 68X0368
      ON SemiconductorPT8 N 30/20 SYNCFET / REEL0
      • 1:$0.6370
      FDMS0306AS
      DISTI # 512-FDMS0306AS
      ON SemiconductorMOSFET PT8 N 30/20 SYNCFET
      RoHS: Compliant
      1923
      • 1:$1.0500
      • 10:$0.8920
      • 100:$0.6850
      • 500:$0.6060
      • 1000:$0.4780
      • 3000:$0.4240
      • 9000:$0.4080
      FDMS0306ASFairchild Semiconductor Corporation 
      RoHS: Not Compliant
      18000
      • 1000:$0.4600
      • 500:$0.4900
      • 100:$0.5100
      • 25:$0.5300
      • 1:$0.5700
      영상 부분 # 설명
      BAS19LT1G

      Mfr.#: BAS19LT1G

      OMO.#: OMO-BAS19LT1G

      Diodes - General Purpose, Power, Switching 120V 200mA
      FDMS7692

      Mfr.#: FDMS7692

      OMO.#: OMO-FDMS7692

      MOSFET PT7 30/20V Nch PowerTrench
      IRFHM9331TRPBF

      Mfr.#: IRFHM9331TRPBF

      OMO.#: OMO-IRFHM9331TRPBF

      MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC
      FDMC7692S

      Mfr.#: FDMC7692S

      OMO.#: OMO-FDMC7692S

      MOSFET 30V N-Channel PowerTrench SyncFET
      5650921-5

      Mfr.#: 5650921-5

      OMO.#: OMO-5650921-5

      DIN 41612 Connectors DIN PLUG 120P VERT TYPE R
      PMR10EZPFV2L00

      Mfr.#: PMR10EZPFV2L00

      OMO.#: OMO-PMR10EZPFV2L00-ROHM-SEMI

      RES 0.002 OHM 1% 1/2W 0805
      5650921-5

      Mfr.#: 5650921-5

      OMO.#: OMO-5650921-5-TE-CONNECTIVITY

      DIN 41612 Connectors DIN PLUG 120P VERT TYPE R
      BAS19LT1G

      Mfr.#: BAS19LT1G

      OMO.#: OMO-BAS19LT1G-ON-SEMICONDUCTOR

      Diodes - General Purpose, Power, Switching 120V 200mA
      DF40C-40DP-0.4V(51)

      Mfr.#: DF40C-40DP-0.4V(51)

      OMO.#: OMO-DF40C-40DP-0-4V-51--HIROSE

      Board to Board & Mezzanine Connectors 40P SMT HEADER NO FITTING, NO BOSS
      FDMC7692S

      Mfr.#: FDMC7692S

      OMO.#: OMO-FDMC7692S-ON-SEMICONDUCTOR

      MOSFET N-CH 30V 8-MLP
      유효성
      재고:
      Available
      주문 시:
      1986
      수량 입력:
      FDMS0306AS의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.05
      US$1.05
      10
      US$0.89
      US$8.92
      100
      US$0.68
      US$68.50
      500
      US$0.61
      US$303.00
      1000
      US$0.48
      US$478.00
      시작
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