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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI4286DY-T1-GE3 DISTI # V72:2272_09215546 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N RoHS: Compliant | 825 |
|
| SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2N-CH 40V 7A 8SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4516In Stock |
|
| SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 40V 7A 8SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4516In Stock |
|
| SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2N-CH 40V 7A 8SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4286DY-T1-GE3 DISTI # 33092553 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N RoHS: Compliant | 5000 |
|
| SI4286DY-T1-GE3 DISTI # 30276089 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N RoHS: Compliant | 825 |
|
| SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N (Alt: SI4286DY-T1-GE3) RoHS: Compliant Min Qty: 2500 | Europe - 12500 |
|
| SI4286DY-T1-GE3 DISTI # 01AC4996 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes | 0 | |
| SI4286DY-T1-GE3. DISTI # 26AC3328 | Vishay Intertechnologies | Transistor Polarity:Dual N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:2.9W,No. of Pins:8Pins RoHS Compliant: Yes | 0 | |
| SI4286DY-T1-GE3 DISTI # 70616175 | Vishay Siliconix | SI4286DY-T1-GE3 Dual N-channel MOSFET Transistor,7 A,40 V,8-Pin SOIC RoHS: Compliant | 0 |
|
| SI4286DY-T1-GE3 DISTI # 78-SI4286DY-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 RoHS: Compliant | 7677 |
|
| SI4286DY-T1-GE3 DISTI # 8123211P | Vishay Intertechnologies | TRANS MOSFET N-CH 40V 5.7A, RL | 2540 |
|
| SI4286DY-T1-GE3 DISTI # 2646383 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 9242 |
|
| SI4286DY-T1-GE3 DISTI # 2679693 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 0 |
|
| SI4286DY-T1-GE3 DISTI # 2646383 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 9277 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI4286DY-T1-GE3 OMO.#: OMO-SI4286DY-T1-GE3-VISHAY |
MOSFET 2N-CH 40V 7A 8SO |