IRF8313PBF

IRF8313PBF
Mfr. #:
IRF8313PBF
제조사:
Infineon Technologies
설명:
Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF8313PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
FET - 어레이
시리즈
-
포장
튜브 대체 포장
단위 무게
0.019048 oz
장착 스타일
SMD/SMT
패키지 케이스
8-SOIC (0.154", 3.90mm Width)
기술
작동 온도
-55°C ~ 175°C (TJ)
장착형
표면 실장
채널 수
2 Channel
공급자-장치-패키지
8-SO
구성
듀얼
FET형
2 N-Channel (Dual)
파워맥스
2W
트랜지스터형
2 N-Channel
드레인-소스 전압 Vdss
30V
입력-커패시턴스-Ciss-Vds
760pF @ 15V
FET 기능
로직 레벨 게이트
Current-Continuous-Drain-Id-25°C
9.7A
Rds-On-Max-Id-Vgs
15.5 mOhm @ 9.7A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Gate-Charge-Qg-Vgs
90nC @ 4.5V
Pd 전력 손실
2 W
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
9.7 A
Vds-드레인-소스-고장-전압
30 V
Rds-On-Drain-Source-Resistance
21.6 mOhms
트랜지스터 극성
N-채널
Qg-Gate-Charge
6 nC
Tags
IRF8313, IRF831, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC Tube
***ark
Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V
***ment14 APAC
MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
부분 # 제조 설명 재고 가격
IRF8313PBF
DISTI # V99:2348_13891188
Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
RoHS: Compliant
182
  • 1:$0.2929
IRF8313PBF
DISTI # IRF8313PBF-ND
Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRF8313PBF..
    DISTI # 30728279
    Infineon Technologies AGIRF8313PBF..735
    • 260:$0.2969
    IRF8313PBF
    DISTI # 26198223
    Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
    RoHS: Compliant
    182
    • 25:$0.2929
    IRF8313PBF
    DISTI # IRF8313PBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube
    Americas - 4924
      IRF8313PBF..
      DISTI # 10R3491
      Infineon Technologies AGDUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V735
      • 1:$0.1930
      • 10:$0.1930
      • 100:$0.1930
      • 500:$0.1930
      • 1000:$0.1930
      • 2500:$0.1930
      • 10000:$0.1930
      IRF8313PBF
      DISTI # 942-IRF8313PBF
      Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      RoHS: Compliant
      0
        IRF8313PBFInfineon Technologies AGPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant
        1439
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313PBFInternational RectifierPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant
        5182
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313TRPBF
        DISTI # IRF8313PBF-GURT
        Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
        RoHS: Compliant
        2600
        • 50:€0.2460
        • 100:€0.2060
        • 500:€0.1860
        • 2000:€0.1790
        IRF8313PBF
        DISTI # C1S327400167723
        Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
        RoHS: Compliant
        123
        • 50:$0.2240
        • 10:$0.3250
        영상 부분 # 설명
        IRF8327STRPBF

        Mfr.#: IRF8327STRPBF

        OMO.#: OMO-IRF8327STRPBF

        MOSFET 30V N-Channel HEXFET Power MOSFET
        IRF8308MTRPBF

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        IRF8306MTR1PBF

        Mfr.#: IRF8306MTR1PBF

        OMO.#: OMO-IRF8306MTR1PBF

        MOSFET MOSFT 30V Gen 3.6mOhm mx 25nC Og
        IRF8304MTR1PBF

        Mfr.#: IRF8304MTR1PBF

        OMO.#: OMO-IRF8304MTR1PBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 28A MX
        IRF830/IRF830PBF

        Mfr.#: IRF830/IRF830PBF

        OMO.#: OMO-IRF830-IRF830PBF-1190

        신규 및 오리지널
        IRF830AL

        Mfr.#: IRF830AL

        OMO.#: OMO-IRF830AL-VISHAY

        MOSFET N-CH 500V 5A TO262-3
        IRF830APBF,IRF830A,IRF83

        Mfr.#: IRF830APBF,IRF830A,IRF83

        OMO.#: OMO-IRF830APBF-IRF830A-IRF83-1190

        신규 및 오리지널
        IRF830P

        Mfr.#: IRF830P

        OMO.#: OMO-IRF830P-1190

        신규 및 오리지널
        IRF831

        Mfr.#: IRF831

        OMO.#: OMO-IRF831-1190

        Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        IRF831P

        Mfr.#: IRF831P

        OMO.#: OMO-IRF831P-1190

        신규 및 오리지널
        유효성
        재고:
        Available
        주문 시:
        2000
        수량 입력:
        IRF8313PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$0.34
        US$0.34
        10
        US$0.32
        US$3.19
        100
        US$0.30
        US$30.24
        500
        US$0.29
        US$142.80
        1000
        US$0.27
        US$268.80
        시작
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