IPA60R650CEXKSA1

IPA60R650CEXKSA1
Mfr. #:
IPA60R650CEXKSA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 600V 7A TO220FP-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPA60R650CEXKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPA60R650CEXKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220FP-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
7 A
Rds On - 드레인 소스 저항:
650 mOhms
Vgs th - 게이트 소스 임계 전압:
2.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
20.5 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
28 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
키:
16.15 mm
길이:
10.65 mm
시리즈:
쿨모스 CE
트랜지스터 유형:
1 N-Channel
너비:
4.85 mm
상표:
인피니언 테크놀로지스
가을 시간:
11 ns
상품 유형:
MOSFET
상승 시간:
8 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
58 ns
일반적인 켜기 지연 시간:
10 ns
부품 번호 별칭:
IPA60R650CE SP001276044
단위 무게:
0.081130 oz
Tags
IPA60R6, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS™ Power Mosfet - TO-220-3FP
***ical
Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
부분 # 제조 설명 재고 가격
IPA60R650CEXKSA1
DISTI # V99:2348_06384368
Infineon Technologies AGTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube36
  • 25000:$0.3827
  • 10000:$0.3899
  • 2500:$0.4000
  • 1000:$0.4240
  • 500:$0.5218
  • 100:$0.5823
  • 10:$0.7231
  • 1:$0.8288
IPA60R650CEXKSA1
DISTI # IPA60R650CEXKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
315In Stock
  • 1000:$0.5038
  • 500:$0.6381
  • 100:$0.8228
  • 10:$1.0410
  • 1:$1.1800
IPA60R650CEXKSA1
DISTI # 26197786
Infineon Technologies AGTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube36
  • 15:$0.7216
IPA60R650CEXKSA1
DISTI # IPA60R650CEXKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 7A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA60R650CEXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.4389
  • 2000:$0.4239
  • 3000:$0.4079
  • 5000:$0.3939
  • 10000:$0.3869
IPA60R650CEXKSA1
DISTI # 12AC9696
Infineon Technologies AGMOSFET, N-CH, 600V, 9.9A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:9.9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes435
  • 1:$1.0100
  • 10:$0.8550
  • 100:$0.6570
  • 500:$0.5810
  • 1000:$0.4580
IPA60R650CEXKSA1
DISTI # 726-IPA60R650CEXKSA1
Infineon Technologies AGMOSFET N-Ch 600V 7A TO220FP-3
RoHS: Compliant
2
  • 1:$1.0100
  • 10:$0.8550
  • 100:$0.6570
  • 500:$0.5810
  • 1000:$0.4580
IPA60R650CEXKSA1
DISTI # 1107452
Infineon Technologies AGMOSFET N-CHANNEL 600V 19A COOLMOS TO220, PK250
  • 20:£0.5670
  • 40:£0.5050
  • 200:£0.3880
  • 400:£0.3780
  • 1000:£0.3740
IPA60R650CEXKSA1
DISTI # C1S322000518164
Infineon Technologies AGMOSFETs36
  • 10:$0.7216
IPA60R650CEXKSA1
DISTI # 2709876
Infineon Technologies AGMOSFET, N-CH, 600V, 9.9A, TO-220FP
RoHS: Compliant
435
  • 1:$1.8800
  • 10:$1.6600
  • 100:$1.3200
  • 500:$1.0200
  • 1000:$0.8030
IPA60R650CEXKSA1
DISTI # 2709876
Infineon Technologies AGMOSFET, N-CH, 600V, 9.9A, TO-220FP
RoHS: Compliant
435
  • 5:£0.5670
  • 25:£0.5050
  • 100:£0.3880
  • 250:£0.3780
  • 500:£0.3680
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OMO.#: OMO-ISO7721DWR

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OMO.#: OMO-AS4C128M32MD2A-18BIN

DRAM 4G 1.2V/1.8V 533MHz 128Mx32 Mobile DDR2
ECW-FD2J474K

Mfr.#: ECW-FD2J474K

OMO.#: OMO-ECW-FD2J474K

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OMO.#: OMO-ISO7721DWR-TEXAS-INSTRUMENTS

DGTL ISO 5KV 2CH GEN PRP 16SOIC
EP2-3N1ST

Mfr.#: EP2-3N1ST

OMO.#: OMO-EP2-3N1ST-642

Automotive Relays 1 FORM CX2 SEPARATE
TK7P60W,RVQ

Mfr.#: TK7P60W,RVQ

OMO.#: OMO-TK7P60W-RVQ-TOSHIBA-SEMICONDUCTOR-AND-STOR

X35 PB-F POWER MOSFET TRANSIST
MBR5200VPTR-E1

Mfr.#: MBR5200VPTR-E1

OMO.#: OMO-MBR5200VPTR-E1-DIODES

DIODE SCHOTTKY 200V 5A DO27
AS4C128M32MD2A-18BIN

Mfr.#: AS4C128M32MD2A-18BIN

OMO.#: OMO-AS4C128M32MD2A-18BIN-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 134FBGA
유효성
재고:
Available
주문 시:
1984
수량 입력:
IPA60R650CEXKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.00
US$1.00
10
US$0.86
US$8.55
100
US$0.66
US$65.70
500
US$0.58
US$290.50
1000
US$0.46
US$458.00
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