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IXTP3N50P

IXTP3N50P
Mfr. #:
IXTP3N50P
제조사:
IXYS
설명:
Darlington Transistors MOSFET 3.6 Amps 500 V 2 Ohm Rds
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXTP3N50P 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
익시스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
IXTP3N50
포장
튜브
단위 무게
0.081130 oz
장착 스타일
구멍을 통해
상표명
극지HV
패키지 케이스
TO-220-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
70 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
12 ns
상승 시간
15 ns
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
3.6 A
Vds-드레인-소스-고장-전압
500 V
Vgs-th-Gate-Source-Threshold-Voltage
5.5 V
Rds-On-Drain-Source-Resistance
2 Ohms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
38 ns
일반 켜기 지연 시간
15 ns
Qg-Gate-Charge
9.3 nC
순방향 트랜스컨덕턴스-최소
2.5 S
채널 모드
상승
Tags
IXTP3N5, IXTP3N, IXTP3, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 500V 3.6A 3-Pin (3+Tab) TO-220
***ukat
N-Ch 500V 3,6A 70W 2R TO220AB
***S
new, original packaged
***el Nordic
Contact for details
***roFlash
N-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in TO-220FP package
***icroelectronics
N-Channel 500V - 1.22 Ohm - 4.4A Zener-Protected SuperMESH(TM) POWER MOSFET
***ical
Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STP5NK50 Series 500 V 4.4 A 1.5 Ohm Through Hole N-Ch Power MOSFET - TO-220FPAB
***ark
N CHANNEL MOSFET, 500V, 4.4A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CH MOSFET, UNITFET, 500V, 4.2A, TO-220F; Transistor Polarity:N Channel; Contin
***emi
N-Channel Power MOSFET, UniFETTM II, FRFET®, 500 V, 4.2 A, 1.75 Ω, TO-220F
***Yang
Trans MOSFET N-CH 500V 4.2A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 4.2A I(D), 500V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, UNITFET, 500V, 4.2A, TO-220; N CH MOSFET, UNITFET, 500V, 4.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; MSL:-
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM MOSFET 500 V, 4 A, 2 Ω, TO-220F
***ark
500V, 4A, 2.0 ohm, NCH MOSFET FRFET - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
***et
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220F Rail
***roFlash
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM II, 500 V, 4.5 A, 1.5 Ω, TO-220F
***Yang
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***inecomponents.com
UniFET2 500V N-channel MOSFET, TO220F Single gage
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, UNITFET, 500V, 4.5A, TO-220; N CH MOSFET, UNITFET, 500V, 4.5A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***i-Key
MOSFET N-CH 500V 3A TO-220F
***ser
MOSFETs 500V N-Channel QFET
***Yang
N-CH/500V/4A/1.8OHM - Bulk
***el Nordic
Contact for details
***icroelectronics
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in TO-220FP
***(Formerly Allied Electronics)
STP4NK60ZFP, N-channel MOSFET Transistor 4A 600V, 3-Pin TO-220FP
*** Source Electronics
MOSFET N-CH 600V 4A TO-220FP / Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:25W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
부분 # 제조 설명 재고 가격
IXTP3N50P
DISTI # IXTP3N50P-ND		IXYS CorporationMOSFET N-CH 500V 3.6A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Limited Supply - Call
  • 50:$1.1396
EVLB001
DISTI # EVLB001-ND		IXYS CorporationKIT EVAL DIMMABLE LIGHT BALLAST
RoHS: Compliant
Min Qty: 1
Container: Box		Limited Supply - Call
    EVLB002
    DISTI # EVLB002-ND    		IXYS CorporationKIT EVAL NONDIM LIGHT BALLAST
    RoHS: Compliant
    Min Qty: 1
    Container: Box    		Limited Supply - Call
      IXTP3N50P
      DISTI # 747-IXTP3N50P      		IXYS CorporationMOSFET 3.6 Amps 500 V 2 Ohm Rds
      RoHS: Compliant      		202
      • 1:$1.3200
      • 10:$1.1900
      • 25:$1.0400
      • 50:$0.9710
      • 100:$0.9580
      • 250:$0.7770
      • 500:$0.7450
      • 1000:$0.6170
      • 2500:$0.5180
      영상 부분 # 설명
      IXTP230N04T4

      Mfr.#: IXTP230N04T4

      OMO.#: OMO-IXTP230N04T4

      		 Discrete Semiconductor Modules Disc MSFT NChTrenchGate-Gen4 TO-220AB/FP
      IXTP140N055T2

      Mfr.#: IXTP140N055T2

      OMO.#: OMO-IXTP140N055T2

      		 MOSFET 140 Amps 0V
      IXTP12N50PM

      Mfr.#: IXTP12N50PM

      OMO.#: OMO-IXTP12N50PM-IXYS-CORPORATION

      		 MOSFET N-CH 500V 6A TO-220
      IXTP160N075T

      Mfr.#: IXTP160N075T

      OMO.#: OMO-IXTP160N075T-IXYS-CORPORATION

      		 MOSFET N-CH 75V 160A TO-220
      IXTP170N075T2

      Mfr.#: IXTP170N075T2

      OMO.#: OMO-IXTP170N075T2-IXYS-CORPORATION

      		 MOSFET N-CH 75V 170A TO-220
      IXTP240N055T

      Mfr.#: IXTP240N055T

      OMO.#: OMO-IXTP240N055T-IXYS-CORPORATION

      		 MOSFET N-CH 55V 240A TO-220
      IXTP44P15T

      Mfr.#: IXTP44P15T

      OMO.#: OMO-IXTP44P15T-IXYS-CORPORATION

      		 Darlington Transistors MOSFET -44 Amps -150V 0.065 Rds
      IXTP2N60P

      Mfr.#: IXTP2N60P

      OMO.#: OMO-IXTP2N60P-IXYS-CORPORATION

      		 IGBT Transistors MOSFET 2.0 Amps 600 V 4.7 Ohm Rds
      IXTP110N055T2

      Mfr.#: IXTP110N055T2

      OMO.#: OMO-IXTP110N055T2-IXYS-CORPORATION

      		 IGBT Transistors MOSFET 110 Amps 55V 0.0066 Rds
      IXTP08N100P

      Mfr.#: IXTP08N100P

      OMO.#: OMO-IXTP08N100P-IXYS-CORPORATION

      		 IGBT Transistors MOSFET 0.8 Amps 1000V 20 Rds
      유효성
      재고:
      Available
      주문 시:
      2500
      수량 입력:
      IXTP3N50P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.78
      US$0.78
      10
      US$0.74
      US$7.38
      100
      US$0.70
      US$69.93
      500
      US$0.66
      US$330.25
      1000
      US$0.62
      US$621.60
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