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R6008FNX

R6008FNX
Mfr. #:
R6008FNX
제조사:
Rohm Semiconductor
설명:
MOSFET Trans MOSFET N-CH 600V 8A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
R6008FNX 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
R6008FNX 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220FP-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
8 A
Rds On - 드레인 소스 저항:
950 mOhms
구성:
하나의
포장:
대부분
트랜지스터 유형:
1 N-Channel
상표:
로옴 반도체
상품 유형:
MOSFET
공장 팩 수량:
500
하위 카테고리:
MOSFET
부품 번호 별칭:
R6008FNX
단위 무게:
0.211644 oz
Tags
R6008F, R6008, R600, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FM Bulk
***ronik
N-CH 600V 8A 950mOhm TO220FP
***i-Key
MOSFET N-CH 600V 8A TO220FM
***el Electronic
CAP CER 10000PF 100V X7R 0603
***itex
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 35W; -55+150 deg.C; THT; TO220FP
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO220FP
***fin
Transistor NPN MOS STP10NK60/STP10NK60ZFP SGS THOMSON Ampere=10 V=600 TO220
***ure Electronics
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH™ Power MosFet - TO-220-FP
***enic
600V 10A 35W 750m´Î@10V4.5A 4.5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ark
N CHANNEL MOSFET, 600V, 10A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM, 600 V, 11.5 A, 700 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220F - Rail/Tube
***ure Electronics
N Channel 600 V 800 mO Flange Mount UniFET Ultra FRFET Mosfet - TO-220F
***nell
MOSFET, N-CH, 600V, 9A, TO-220F.; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***r Electronics
Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 9.5 A, 730 mΩ, TO-220F
***et
Trans MOSFET N-CH 600V 9.5A 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***icroelectronics
N-channel 600 V, 0.59 Ω, 7 A, FDmesh͐2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
***et
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube
***enic
600V 7A 700m´Î@10V3.5A 25W 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***i-Key
MOSFET N-CH 600V 9.5A TO-220F
***ser
MOSFETs 600V N-Channel Adv Q-FET C-Series
***ark
MOSFET, N-CH, 500V, 8.7A, TO-220FP; Transistor Polarity:N Channel; Continuous Dr
***ical
Trans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220FP
***nell
MOSFET, N-CH, 500V, 8.7A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.7ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
부분 # 제조 설명 재고 가격
R6008FNX
DISTI # 30597496		ROHM SemiconductorTrans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FM Bulk
RoHS: Compliant		1600
  • 8:$3.3750
R6008FNX
DISTI # R6008FNX-ND		ROHM SemiconductorMOSFET N-CH 600V 8A TO-220FM
RoHS: Compliant
Min Qty: 1
Container: Bulk		780In Stock
  • 500:$2.0750
  • 100:$2.5625
  • 10:$3.1250
  • 1:$3.5000
R6008FNX
DISTI # C1S625900681263		ROHM SemiconductorTrans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FM Bulk
RoHS: Compliant		1600
  • 1600:$1.5600
  • 800:$1.6800
  • 100:$1.7200
  • 50:$1.8600
  • 10:$2.3000
  • 1:$2.7000
R6008FNX
DISTI # R6008FNX		ROHM SemiconductorTrans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FM Bulk (Alt: R6008FNX)
RoHS: Compliant
Min Qty: 500
Container: Bulk		Europe - 0
  • 5000:€1.1900
  • 3000:€1.2900
  • 2000:€1.3900
  • 1000:€1.4900
  • 500:€1.8900
R6008FNX
DISTI # R6008FNX		ROHM SemiconductorTrans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FM Bulk - Bulk (Alt: R6008FNX)
RoHS: Compliant
Min Qty: 500
Container: Bulk		Americas - 0
  • 3000:$1.2900
  • 5000:$1.2900
  • 2000:$1.3900
  • 1000:$1.4900
  • 500:$1.5900
R6008FNX
DISTI # 755-R6008FNX		ROHM SemiconductorMOSFET Trans MOSFET N-CH 600V 8A
RoHS: Compliant		0
    R6008FNXROHM Semiconductor 72
    • 73:$3.2005
    • 21:$3.4600
    • 1:$5.1900
    R6008FNXROHM SemiconductorRoHS(ship within 1day)90
    • 1:$3.4100
    • 10:$2.5500
    • 50:$2.2500
    • 100:$1.9200
    • 500:$1.7900
    • 1000:$1.7300
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    R6004PNDFRATL

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    OMO.#: OMO-R6004PNDFRATL-1190

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    		 신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    4500
    수량 입력:
    R6008FNX의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.31
    US$3.31
    10
    US$2.82
    US$28.20
    100
    US$2.44
    US$244.00
    250
    US$2.32
    US$580.00
    500
    US$2.08
    US$1 040.00
    1000
    US$1.75
    US$1 750.00
    2500
    US$1.67
    US$4 175.00
    5000
    US$1.60
    US$8 000.00
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