TGF2120

Mfr. #:: TGF2120
제조사:: Qorvo
설명:: RF JFET Transistors DC-20GHz Gain 11dB 57% PAE@12GHz
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2120 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TGF2120 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: pHEMT

기술:: GaAs

얻다:: 11 dB

Vds - 드레인 소스 항복 전압:: 8 V

Vgs - 게이트 소스 항복 전압:: - 12 V

Id - 연속 드레인 전류:: 194 mA

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 4.2 W

패키지/케이스:: 주사위

포장:: 젤팩

구성:: 하나의

동작 주파수:: 20 GHz

제품:: RF JFET

유형:: GaAs pHEMT

상표:: 코르보

순방향 트랜스컨덕턴스 - 최소:: 464 mS

P1dB - 압축점:: 31 dBm

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 100

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1098613

Tags: TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2120 설명

***W: Transistor, DC- 20 GHz, 31 dBm, 11 dB, 8V, DIE

TGF2120 추가 정보

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

TGF2120 GaAs pHEMT: Qorvo TGF2120 is a discrete 1200-Micron pHEMT which operates from DC to 20 GHz. Qorvo TGF2120 is designed using 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2120 typically provides 31 dBm of output power at P1dB with gain of 11dB and 57% power-added efficiency at 1dB compression. This performance makes the TGF2120 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More

Market price

부분 #	제조	설명	재고	가격
TGF2120 DISTI # 772-TGF2120	Qorvo	RF JFET Transistors DC-20GHz Gain 11dB 57% PAE@12GHz RoHS: Compliant	0	100:$14.6000 300:$13.6500 500:$12.7500

관련 상품

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