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STB10NK60ZT4

STB10NK60ZT4
Mfr. #:
STB10NK60ZT4
제조사:
STMicroelectronics
설명:
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STB10NK60ZT4 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STB10NK60ZT4 추가 정보 STB10NK60ZT4 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
10 A
Rds On - 드레인 소스 저항:
750 mOhms
Vgs - 게이트 소스 전압:
30 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
115 W
구성:
하나의
채널 모드:
상승
상표명:
슈퍼메시
포장:
릴
시리즈:
STB10NK60Z
트랜지스터 유형:
1 N-Channel
유형:
MOSFET
상표:
ST마이크로일렉트로닉스
순방향 트랜스컨덕턴스 - 최소:
7.8 S
가을 시간:
30 ns
상품 유형:
MOSFET
상승 시간:
20 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
55 ns
일반적인 켜기 지연 시간:
20 ns
단위 무게:
0.139332 oz
Tags
STB10NK60Z, STB10NK, STB10N, STB10, STB1, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***itex
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
***th Star Micro
Transistor MOSFET N-CH 600V 10A 3-Pin (2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET, N CHANNEL, 600V, 10A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
부분 # 제조 설명 재고 가격
STB10NK60ZT4
DISTI # 497-6544-1-ND		STMicroelectronicsMOSFET N-CH 600V 10A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1048In Stock
  • 500:$1.8770
  • 100:$2.3180
  • 10:$2.8270
  • 1:$3.1700
STB10NK60ZT4
DISTI # 497-6544-6-ND		STMicroelectronicsMOSFET N-CH 600V 10A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1048In Stock
  • 500:$1.8770
  • 100:$2.3180
  • 10:$2.8270
  • 1:$3.1700
STB10NK60ZT4
DISTI # 497-6544-2-ND		STMicroelectronicsMOSFET N-CH 600V 10A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$1.5918
STB10NK60ZT4
DISTI # STB10NK60ZT4		STMicroelectronicsTrans MOSFET N-CH 600V 10A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB10NK60ZT4)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.3900
  • 2000:$1.3900
  • 4000:$1.2900
  • 6000:$1.2900
  • 10000:$1.1900
STB10NK60ZT4
DISTI # 33R1094		STMicroelectronicsMOSFET, N CHANNEL, 600V, 10A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.65ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V RoHS Compliant: Yes75
  • 1:$2.9400
  • 10:$2.5000
  • 100:$2.0000
  • 500:$1.7500
STB10NK60ZT4
DISTI # 511-STB10NK60Z		STMicroelectronicsMOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
RoHS: Compliant		650
  • 1:$2.9400
  • 10:$2.5000
  • 100:$2.0000
  • 500:$1.7500
  • 1000:$1.4500
  • 2000:$1.3500
  • 5000:$1.3000
STB10NK60ZT4
DISTI # 6875175		STMicroelectronicsMOSFET N-CH 600V 10A SUPERMESH D2PAK, PK350
  • 5:£2.4220
  • 25:£1.9260
  • 50:£1.7360
  • 125:£1.5420
  • 250:£1.5120
STB10NK60ZT4
DISTI # 6875175P		STMicroelectronicsMOSFET N-CH 600V 10A SUPERMESH D2PAK, RL145
  • 25:£1.9260
  • 50:£1.7360
  • 125:£1.5420
  • 250:£1.5120
STB10NK60ZT4ST Microwave CorporationPower Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		Americas - 1000
    STB10NK60ZT4
    DISTI # 1751968    		STMicroelectronicsMOSFET, N CH, 600V, 10A, D2PAK
    RoHS: Compliant    		75
    • 5:£2.0200
    • 25:£1.7400
    • 100:£1.5300
    • 250:£1.5100
    • 500:£1.3400
    STB10NK60ZT4
    DISTI # 1751968    		STMicroelectronicsMOSFET, N CH, 600V, 10A, D2PAK
    RoHS: Compliant    		78
    • 1:$3.6800
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    유효성
    재고:
    997
    주문 시:
    2980
    수량 입력:
    STB10NK60ZT4의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.94
    US$2.94
    10
    US$2.50
    US$25.00
    100
    US$2.00
    US$200.00
    500
    US$1.75
    US$875.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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