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STGWA15M120DF3

STGWA15M120DF3
Mfr. #:
STGWA15M120DF3
제조사:
STMicroelectronics
설명:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGWA15M120DF3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGWA15M120DF3 추가 정보 STGWA15M120DF3 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
1.85 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
30 A
Pd - 전력 손실:
283 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
STGWA15M120DF3
포장:
튜브
상표:
ST마이크로일렉트로닉스
게이트-이미터 누설 전류:
250 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
600
하위 카테고리:
IGBT
단위 무게:
1.340411 oz
Tags
STGWA15, STGWA1, STGWA, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Single Transistor, 30 A, 1.85 V, 259 W, 1.2 Kv, To-247, 3
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
***ical
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
부분 # 제조 설명 재고 가격
STGWA15M120DF3
DISTI # 30592121		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		20
  • 10:$5.3422
  • 4:$8.3130
STGWA15M120DF3
DISTI # 497-15059-5-ND		STMicroelectronicsIGBT 1200V 30A 259W
RoHS: Compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$5.2707
STGWA15M120DF3
DISTI # C1S730200974226		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		20
  • 10:$4.1900
  • 1:$6.5200
STGWA15M120DF3
DISTI # STGWA15M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGWA15M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$4.2900
  • 1200:$4.0900
  • 2400:$3.8900
  • 3600:$3.6900
  • 6000:$3.6900
STGWA15M120DF3
DISTI # STGWA15M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: STGWA15M120DF3)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€4.3900
  • 10:€3.9900
  • 25:€3.8900
  • 50:€3.6900
  • 100:€3.5900
  • 500:€3.3900
  • 1000:€3.1900
STGWA15M120DF3
DISTI # 42Y1007		STMicroelectronicsIGBT, SINGLE, 1.2KV, 30A, TO-247-3,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:259W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°CRoHS Compliant: Yes578
  • 1:$6.9000
  • 10:$6.2400
  • 25:$5.9500
  • 50:$5.5600
  • 100:$5.1700
  • 250:$4.9400
  • 500:$4.5000
STGWA15M120DF3
DISTI # 511-STGWA15M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
RoHS: Compliant		0
  • 1:$6.9000
  • 10:$6.2400
  • 25:$5.9500
  • 100:$5.1700
  • 250:$4.9400
  • 500:$4.5000
STGWA15M120DF3STMicroelectronics 
RoHS: Compliant		Europe - 600
    STGWA15M120DF3
    DISTI # 2470025    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 30A, TO-247-3
    RoHS: Compliant    		578
    • 1:$10.9200
    • 10:$9.8700
    • 25:$9.4200
    STGWA15M120DF3
    DISTI # 2470025    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 30A, TO-247-3
    RoHS: Compliant    		578
    • 1:£5.4600
    • 10:£4.5000
    • 100:£3.9100
    • 250:£3.7400
    • 500:£3.4100
    영상 부분 # 설명
    STGWA15H120DF2

    Mfr.#: STGWA15H120DF2

    OMO.#: OMO-STGWA15H120DF2

    		 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
    STGWA15S120DF3

    Mfr.#: STGWA15S120DF3

    OMO.#: OMO-STGWA15S120DF3

    		 IGBT Transistors Trench gate field-stop IGBT, S series 1200 V, 15 A low drop
    STGWA15M120DF3

    Mfr.#: STGWA15M120DF3

    OMO.#: OMO-STGWA15M120DF3

    		 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
    STGWA15H120F2

    Mfr.#: STGWA15H120F2

    OMO.#: OMO-STGWA15H120F2

    		 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
    STGWA15M120DF3

    Mfr.#: STGWA15M120DF3

    OMO.#: OMO-STGWA15M120DF3-STMICROELECTRONICS

    		 IGBT Transistors IGBT & Power Bipola
    STGWA15H120F2

    Mfr.#: STGWA15H120F2

    OMO.#: OMO-STGWA15H120F2-STMICROELECTRONICS

    		 IGBT HB 1200V 15A HS TO247-3
    STGWA15H120DF2

    Mfr.#: STGWA15H120DF2

    OMO.#: OMO-STGWA15H120DF2-STMICROELECTRONICS

    		 IGBT HB 1200V 15A HS TO247-3
    유효성
    재고:
    Available
    주문 시:
    3000
    수량 입력:
    STGWA15M120DF3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$6.89
    US$6.89
    10
    US$6.23
    US$62.30
    25
    US$5.94
    US$148.50
    100
    US$5.16
    US$516.00
    250
    US$4.93
    US$1 232.50
    500
    US$4.49
    US$2 245.00
    1000
    US$3.91
    US$3 910.00
    2500
    US$3.77
    US$9 425.00
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