SIHB23N60E-GE3

Name: Vishay - SIHB23N60E-GE3
Brand: Vishay
SKU: OMO-2922915
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIHB23N60E-GE3
제조사:: Vishay
설명:: MOSFET N-CH 600V 23A D2PAK
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIHB23N60E-GE3 데이터 시트
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추가 정보:: SIHB23N60E-GE3 추가 정보

제품 속성
속성 값

Tags: SIHB2, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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Vacuum Packaging with PL

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SIHB23N60E-GE3 설명

***ure Electronics: E Series N Channel 600 V 0.158 O 95 nC Surface Mount Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK

***et Europe: Trans MOSFET N-CH 600V 23A 3-Pin D2PAK

***i-Key: MOSFET N-CH 600V 23A D2PAK

***ark: MOSFET, N CH, 600V, 23A, TO-263-3

***: N-CH 600V D2PAK

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 600V, 23A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.132ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:227W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C

***nell: MOSFET, CANALE N, 600V, 23A, TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.132ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C

SIHB23N60E-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

부분 #	제조	설명	재고	가격
SIHB23N60E-GE3 DISTI # SIHB23N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 23A D2PAK Min Qty: 1 Container: Tube	999In Stock	2500:$1.8766 500:$2.3423 100:$2.7515 50:$3.1748 10:$3.3580 1:$3.7400
SIHB23N60E-GE3 DISTI # SIHB23N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 23A 3-Pin D2PAK - Tape and Reel (Alt: SIHB23N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.7900 10000:$1.7900 2000:$1.8900 4000:$1.8900 1000:$1.9900
SIHB23N60E-GE3 DISTI # SIHB23N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 23A 3-Pin D2PAK (Alt: SIHB23N60E-GE3) RoHS: Compliant Min Qty: 50	Europe - 0	500:€1.3900 300:€1.4900 200:€1.6900 100:€2.0900 50:€2.5900
SIHB23N60E-GE3 DISTI # 40X8671	Vishay Intertechnologies	MOSFET Transistor, N Channel, 23 A, 600 V, 0.132 ohm, 10 V RoHS Compliant: Yes RoHS: Compliant	151	1000:$2.3600 500:$2.7900 100:$3.4200 50:$3.6600 25:$3.9000 10:$4.1400 1:$4.6300
SIHB23N60E-GE3 DISTI # 78-SIHB23N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	1000	1:$3.9500 10:$3.2700 100:$2.6900 250:$2.6100 500:$2.3400 1000:$1.9700 2000:$1.8700
SIHB23N60E-GE3 DISTI # 2400377	Vishay Intertechnologies	MOSFET, N CH, 600V, 23A, TO-263-3 RoHS: Compliant	151	2500:$2.9800 500:$3.7100 100:$4.3600 50:$5.0300 10:$5.3200 1:$5.9200
SIHB23N60E-GE3 DISTI # 2400377	Vishay Intertechnologies	MOSFET, N CH, 600V, 23A, TO-263-3	181	500:£2.1500 250:£2.3200 100:£2.6400 10:£3.1900 1:£3.9800
SIHB23N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas -

SIHB23N60E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes