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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPB09N03LA DISTI # IPB09N03LAINTR-ND | Infineon Technologies AG | MOSFET N-CH 25V 50A D2PAK RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB09N03LAT DISTI # IPB09N03LAT-ND | Infineon Technologies AG | MOSFET N-CH 25V 50A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB09N03LA G DISTI # IPB09N03LAG-ND | Infineon Technologies AG | MOSFET N-CH 25V 50A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB09N03LAG DISTI # 726-IPB09N03LAG | Infineon Technologies AG | MOSFET N-Ch 25V 50A D2PAK-2 RoHS: Compliant | 0 | |
| IPB09N03LA | Infineon Technologies AG | MOSFET Transistor, N-Channel, TO-263 | 8611 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPB054N06N3GATMA1 |
MOSFET N-CH 60V 80A TO263-3 |
|
|
Mfr.#: IPB073N15N5ATMA1 |
MV POWER MOS |
|
Mfr.#: IPB017N06N 017N06N -7 |
신규 및 오리지널 |
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|
Mfr.#: IPB021N06N3G OMO.#: OMO-IPB021N06N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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|
Mfr.#: IPB023N06N3G OMO.#: OMO-IPB023N06N3G-1190 |
140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
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|
Mfr.#: IPB034N06N3G , MS10-05AT |
신규 및 오리지널 |
|
|
Mfr.#: IPB049N06L3G OMO.#: OMO-IPB049N06L3G-1190 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB04N03LAT |
MOSFET N-CH 25V 80A D2PAK |
|
|
Mfr.#: IPB054N08N3G,054N08N |
신규 및 오리지널 |
|
|
Mfr.#: IPB05N03LA |
MOSFET N-CH 25V 80A D2PAK |