SGP23N60UFDTU

SGP23N60UFDTU
Mfr. #:
SGP23N60UFDTU
제조사:
ON Semiconductor / Fairchild
설명:
IGBT Transistors Dis High Perf IGBT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SGP23N60UFDTU 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SGP23N60UFDTU Datasheet
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
패키지/케이스:
TO-220-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
2.1 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
23 A
Pd - 전력 손실:
100 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
SGP23N60UFD
포장:
튜브
연속 수집가 현재 IC 최대:
23 A
키:
9.4 mm
길이:
10.1 mm
너비:
4.7 mm
상표:
온세미컨덕터 / 페어차일드
지속적인 수집가 전류:
23 A
게이트-이미터 누설 전류:
+/- 100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
IGBT
부품 번호 별칭:
SGP23N60UFDTU_NL
단위 무게:
0.063493 oz
Tags
SGP23N60UFD, SGP23N60U, SGP23, SGP2, SGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***nell
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*** Source Electronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220
***r Electronics
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***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ineon SCT
Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
부분 # 제조 설명 재고 가격
SGP23N60UFDTU
DISTI # C1S541901576781
ON SemiconductorTrans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
5200
  • 2000:$0.9020
  • 500:$1.2700
  • 5:$2.0700
SGP23N60UFDTU
DISTI # SGP23N60UFDTU-ND
ON SemiconductorIGBT 600V 23A 100W TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
  • 1000:$1.0099
SGP23N60UFDTU
DISTI # SGP23N60UFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP23N60UFDTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.7909
  • 2000:$0.7859
  • 4000:$0.7759
  • 6000:$0.7659
  • 10000:$0.7469
SGP23N60UFDTU
DISTI # 512-SGP23N60UFDTU
ON SemiconductorIGBT Transistors Dis High Perf IGBT
RoHS: Compliant
0
    SGP23N60UFDTU
    DISTI # XSFP00000158817
    Fairchild Semiconductor Corporation 
    RoHS: Compliant
    1346
    • 1000:$1.9400
    • 1346:$1.7600
    영상 부분 # 설명
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU

    IGBT Transistors Dis High Perf IGBT
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU

    IGBT Transistors Dis High Perf IGBT
    SGP23N60

    Mfr.#: SGP23N60

    OMO.#: OMO-SGP23N60-1190

    신규 및 오리지널
    SGP23N60RUFD

    Mfr.#: SGP23N60RUFD

    OMO.#: OMO-SGP23N60RUFD-1190

    신규 및 오리지널
    SGP23N60UF

    Mfr.#: SGP23N60UF

    OMO.#: OMO-SGP23N60UF-1190

    신규 및 오리지널
    SGP23N60UFD

    Mfr.#: SGP23N60UFD

    OMO.#: OMO-SGP23N60UFD-1190

    신규 및 오리지널
    SGP23N60UFD G23N60UFD

    Mfr.#: SGP23N60UFD G23N60UFD

    OMO.#: OMO-SGP23N60UFD-G23N60UFD-1190

    신규 및 오리지널
    SGP23N60UFDTU_NL

    Mfr.#: SGP23N60UFDTU_NL

    OMO.#: OMO-SGP23N60UFDTU-NL-1190

    신규 및 오리지널
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU-ON-SEMICONDUCTOR

    IGBT Transistors Dis High Perf IGBT
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU-ON-SEMICONDUCTOR

    IGBT 600V 23A 100W TO220-3
    유효성
    재고:
    Available
    주문 시:
    4000
    수량 입력:
    SGP23N60UFDTU의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.13
    US$2.13
    10
    US$1.81
    US$18.10
    100
    US$1.45
    US$145.00
    500
    US$1.27
    US$635.00
    1000
    US$1.05
    US$1 050.00
    2000
    US$0.98
    US$1 960.00
    5000
    US$0.94
    US$4 715.00
    10000
    US$0.91
    US$9 070.00
    시작
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