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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SKM 100 GB 176 DN DISTI # 88K1185 | SEMIKRON | IGBT MODULE, 1.7KV, 125A, SEMITRANS 2N,Transistor Polarity:N Channel,DC Collector Current:130A,Collector Emitter Saturation Voltage Vce(on):1.7kV,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.7kV,No. of Pins:7PinsRoHS Compliant: Yes | 0 | |
| SKM 100 GB 176 D DISTI # 16M0230 | SEMIKRON | IGBT MODULE, 1.7KV, 125A, SEMITRANS 2,Transistor Polarity:N Channel,DC Collector Current:125A,Collector Emitter Saturation Voltage Vce(on):1.7kV,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.7kV,No. of Pins:7Pins RoHS Compliant: Yes | 0 |
|
| SKM100GB176D DISTI # 70098381 | SEMIKRON | SEMITRANS,IGBT STANDARD HALFBRIDG,1700V RoHS: Compliant | 0 |
|
| SKM100GB176D DISTI # 9056172 | SEMIKRON | DUAL SERIES IGBT 1700V 125A MODULE, EA | 44 |
|
| SKM 100GB176D DISTI # SKM100GB176D | SEMIKRON | IGBT half-bridge,Urmax:1.7kV,Ic:75A,SEMITRANS2,V: D61,screw | 15 |
|
| SKM100GB176D DISTI # SKM100GB176D | SEMIKRON | POWER IGBT TRANSISTOR RoHS: Compliant | 0 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SKM100GA120 OMO.#: OMO-SKM100GA120-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SKM100GAL123D OMO.#: OMO-SKM100GAL123D-1190 |
POWER IGBT TRANSISTOR |
|
|
Mfr.#: SKM100GAR121D OMO.#: OMO-SKM100GAR121D-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SKM100GB066D OMO.#: OMO-SKM100GB066D-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SKM100GB123DE OMO.#: OMO-SKM100GB123DE-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SKM100GB124D OMO.#: OMO-SKM100GB124D-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SKM100GB125DN OMO.#: OMO-SKM100GB125DN-1190 |
IGBT Array & Module Transistor, Dual N Channel, 100 A, 3.3 V, 1.2 kV, Module RoHS Compliant: Yes |
|
|
Mfr.#: SKM100GB128D OMO.#: OMO-SKM100GB128D-1190 |
POWER IGBT TRANSISTOR |
|
|
Mfr.#: SKM100GB12V OMO.#: OMO-SKM100GB12V-1190 |
IGBT MODULE, DUAL N CH, 1.2KV, 159A, Transistor Polarity:Dual N Channel, DC Collector Current:159A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter V |
|
|
Mfr.#: SKM100GB173D OMO.#: OMO-SKM100GB173D-1190 |
IGBT MODULE, 1.7KV, 110A, SEMITRANS 2, Transistor Polarity:N Channel, DC Collector Current:110A, Collector Emitter Saturation Voltage Vce(on):1.7kV, Power Dissipation Pd:-, Collector Emitter Volt |