SIE812DF-T1-GE3

Mfr. #:: SIE812DF-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET 40V 163A 125W 2.6mohm @ 10V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIE812DF-T1-GE3 데이터 시트
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지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIE812DF-T1-GE3 Datasheet SIE812DF-T1-GE3 Datasheet (P4-P6)SIE812DF-T1-GE3 Datasheet (P7-P9)SIE812DF-T1-GE3 Datasheet (P10)
ECAD Model:
추가 정보:: SIE812DF-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: E

기술:: 시

상표명:: TrenchFET, PolarPAK

포장:: 릴

시리즈:: SIE

상표:: 비쉐이 / 실리콘닉스

상품 유형:: MOSFET

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

부품 번호 별칭:: SIE812DF-GE3

Tags: SIE812, SIE81, SIE8, SIE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE812DF-T1-GE3 설명

***et: Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R

***ment14 APAC: N CHANNEL MOSFET, 40V, 60A POLARPAK

***i-Key: MOSFET N-CH 40V 60A 10POLARPAK

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes

SIE812DF-T1-GE3 추가 정보

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

부분 #	제조	설명	재고	가격
SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 40V 60A POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.8141
SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.7900 6000:$1.6900 12000:$1.5900 18000:$1.5900 30000:$1.4900
SIE812DF-T1-GE3 DISTI # 15R4857	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes	0	1:$1.9500 2000:$1.8600 4000:$1.7400 8000:$1.6200 12000:$1.5500 20000:$1.5300
SIE812DF-T1-GE3 DISTI # 26R1858	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes	0	1:$3.8600 25:$3.6300 50:$3.4100 100:$3.1200 250:$2.8200 500:$2.4600 1000:$1.9500
SIE812DF-T1-GE3 DISTI # 781-SIE812DF-GE3	Vishay Intertechnologies	MOSFET 40V 163A 125W 2.6mohm @ 10V RoHS: Compliant	0	3000:$1.6500

관련 상품

영상	부분 #	설명
	Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3	MOSFET 40V 60A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3	MOSFET 40V 163A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 40V 163A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF OMO.#: OMO-SIE812DF-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 5000
수량 입력:

SIE812DF-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$3.47~~; ~~US$3.47~~

10: ~~US$2.87~~; ~~US$28.70~~

100: ~~US$2.36~~; ~~US$236.00~~

250: ~~US$2.29~~; ~~US$572.50~~

500: ~~US$2.05~~; ~~US$1 025.00~~

1000: ~~US$1.73~~; ~~US$1 730.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SIE812 3
SIE81 11
SIE8 63
SIE 169

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SIE812DF-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes