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IKW08T120

IKW08T120
Mfr. #:
IKW08T120
제조사:
Infineon Technologies
설명:
IGBT Transistors LOW LOSS DuoPack 1200V 8A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IKW08T120 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IKW08T120 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
1.7 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
16 A
Pd - 전력 손실:
70 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
시리즈:
트렌치스톱 IGBT
포장:
튜브
키:
21.1 mm
길이:
16.03 mm
너비:
5.16 mm
상표:
인피니언 테크놀로지스
지속적인 수집가 전류:
16 A
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
240
하위 카테고리:
IGBT
상표명:
트렌치스톱
부품 번호 별칭:
IKW08T120FKSA1 IKW8T12XK SP000013885
단위 무게:
1.340411 oz
Tags
IKW08, IKW0, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V Gen8 IGBTs
Infineon 1200V Gen8 IGBTs feature IR's latest generation trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. These Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to 175°C.Learn More
부분 # 제조 설명 재고 가격
IKW08T120FKSA1
DISTI # V36:1790_06378431		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IKW08T120FKSA1
    DISTI # IKW08T120FKSA1-ND    		Infineon Technologies AGIGBT 1200V 16A 70W TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		3In Stock
    • 2640:$2.1616
    • 720:$2.6912
    • 240:$3.1613
    • 25:$3.6476
    • 10:$3.8580
    • 1:$4.3000
    IKW08T120
    DISTI # SP000013885    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin TO-247 Tube (Alt: SP000013885)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Europe - 180
    • 300:€1.1900
    • 180:€1.2900
    • 120:€1.3900
    • 60:€1.5900
    • 30:€1.8900
    IKW08T120XK
    DISTI # IKW08T120FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IKW08T120FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 960:$1.4900
    • 1440:$1.4900
    • 2400:$1.4900
    • 480:$1.5900
    • 240:$1.6900
    IKW08T120FKSA1
    DISTI # 61M6730    		Infineon Technologies AGIGBT, N, 1200V, 8A, TO-247,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:70W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes315
    • 500:$2.5900
    • 250:$2.8800
    • 100:$3.0400
    • 50:$3.1900
    • 25:$3.3500
    • 10:$3.5000
    • 1:$4.1200
    IKW08T120
    DISTI # 726-IKW08T120    		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 8A
    RoHS: Compliant    		330
    • 1:$4.0800
    • 10:$3.4700
    • 100:$3.0100
    • 250:$2.8500
    • 500:$2.5600
    IKW08T120FKSA1
    DISTI # 726-IKW08T120FKSA1    		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 8A
    RoHS: Compliant    		350
    • 1:$4.0800
    • 10:$3.4700
    • 100:$3.0100
    • 250:$2.8500
    • 500:$2.5600
    IKW08T120FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
    RoHS: Compliant    		34
    • 1000:$1.4000
    • 500:$1.4700
    • 100:$1.5300
    • 25:$1.5900
    • 1:$1.7200
    IKW08T120FKSA1
    DISTI # 8922129P    		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 16A TO247, TU160
    • 500:£1.4550
    • 200:£1.4850
    • 100:£1.5150
    • 20:£1.7380
    IKW08T120FKSA1
    DISTI # 8922129    		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 16A TO247, PK36
    • 500:£1.4550
    • 200:£1.4850
    • 100:£1.5150
    • 20:£1.7380
    • 4:£2.2780
    IKW08T120FKSA1
    DISTI # 1471744    		Infineon Technologies AGIGBT, N, 1200V, 8A, TO-247
    RoHS: Compliant    		315
    • 500:$3.9400
    • 250:$4.3800
    • 100:$4.6400
    • 10:$5.3400
    • 1:$6.2800
    IKW08T120FKSA1
    DISTI # 1471744    		Infineon Technologies AGIGBT, N, 1200V, 8A, TO-247585
    • 500:£2.0200
    • 250:£2.2400
    • 100:£2.3700
    • 10:£2.7300
    • 1:£3.5800
    IKW08T120Infineon Technologies AG1200V,16A,IGBT with Anti-Parallel Diode60
    • 1:$2.3000
    • 100:$1.9200
    • 500:$1.6900
    • 1000:$1.6500
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    유효성
    재고:
    300
    주문 시:
    2283
    수량 입력:
    IKW08T120의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$4.08
    US$4.08
    10
    US$3.47
    US$34.70
    100
    US$3.01
    US$301.00
    250
    US$2.85
    US$712.50
    500
    US$2.56
    US$1 280.00
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