BGAV1A10E6327XTSA1

Mfr. #:: BGAV1A10E6327XTSA1
제조사:: Infineon Technologies
설명:: RF Amplifier RF SILICON MMIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BGAV1A10E6327XTSA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: BGAV1A10E6327XTSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: RF 증폭기

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: ATSLP

유형:: LNA

동작 주파수:: 3.4 GHz to 3.8 GHz

P1dB - 압축점:: 3 dBm

얻다:: 22 dB

작동 공급 전압:: 1.8 V

NF - 노이즈 피겨:: 1.3 dB

테스트 빈도:: 3500 MHz

OIP3 - 3차 차단:: 32 dBm

작동 공급 전류:: 5 mA

최소 작동 온도:: - 30 C

최대 작동 온도:: + 85 C

포장:: 릴

상표:: 인피니언 테크놀로지스

채널 수:: 1 Channel

입력 반환 손실:: 13 dB

절연 dB:: 32 dB

습기에 민감한:: 네

Pd - 전력 손실:: 90 mW

상품 유형:: RF 증폭기

공장 팩 수량:: 4500

하위 카테고리:: 무선 및 RF 집적 회로

부품 번호 별칭:: BGA E6327 SP001628074 V1A10

Tags: BGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BGAV1A10E6327XTSA1 설명

***et Japan: RF Low Noise Amp Single 3.4GHz to 3.8GHz -13dB 10-Pin ATSLP-1 T/R

***ment14 APAC: RF AMPLIFIER, 3.8GHZ, -30 TO 85DEG C

***ineon SCT: Operating frequencies: 3, PG-ATSLP-10, RoHS

***ark: Rf Amplifier, 3.8Ghz, -30 To 85Deg C; Frequency Min:3.4Ghz; Frequency Max:3.8Ghz; Gain:18Db; Noise Figure Typ:1.3Db; Rf Ic Case Style:atslp; No. Of Pins:10Pins; Supply Voltage Min:1.7V; Supply Voltage Max:1.9V; Operating Temperature Rohs Compliant: Yes

BGAV1A10E6327XTSA1 추가 정보

BGAx1A10 LTE LNA with Gain Control: Infineon Technologies BGAx1A10 LTE Low Noise Amplifiers (LNA) with Gain Control are designed to significantly improve the data rate. These BGAx1A10 LNAs feature an integrated gain control, bypass function, high system flexibility, 27dB gain dynamic range, and a low noise figure. The bypass mode reduces current consumption and the Mobile Industry Processor Interface (MIPI) control interface reduces the control lines to a minimum. The BGAx1A10 LNAs ensures high LTE data rates due to high gain feature and higher system flexibility due to integrated gain control. These BGAx1A10 LNAs offer best noise figure in the high gain mode that guarantees high data rates even on the LTE cell edge. The BGAx1A10 LNAs are ideal for use in smartphones.

Market price

부분 #	제조	설명	재고	가격
BGAV1A10E6327XTSA1 DISTI # BGAV1A10E6327XTSA1TR-ND	Infineon Technologies AG	IC RF AMP LNA 3.5GHZ 10ATSLP RoHS: Compliant Min Qty: 4500 Container: Tape & Reel (TR)	4500In Stock	31500:$0.3100 13500:$0.3200 9000:$0.3325 4500:$0.3500
BGAV1A10E6327XTSA1 DISTI # BGAV1A10E6327XTSA1CT-ND	Infineon Technologies AG	IC RF AMP LNA 3.5GHZ 10ATSLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4500In Stock	1000:$0.3862 500:$0.4893 100:$0.5923 10:$0.7600 1:$0.8500
BGAV1A10E6327XTSA1 DISTI # BGAV1A10E6327XTSA1DKR-ND	Infineon Technologies AG	IC RF AMP LNA 3.5GHZ 10ATSLP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4500In Stock	1000:$0.3862 500:$0.4893 100:$0.5923 10:$0.7600 1:$0.8500
BGAV1A10E6327XTSA1 DISTI # SP001628074	Infineon Technologies AG	RF SILICON MMIC (Alt: SP001628074) RoHS: Compliant Min Qty: 4500	Europe - 4500	45000:€0.3659 27000:€0.3859 18000:€0.4499 9000:€0.5279 4500:€0.6139
BGAV1A10E6327XTSA1 DISTI # BGAV1A10E6327XTSA1	Infineon Technologies AG	RF SILICON MMIC - Tape and Reel (Alt: BGAV1A10E6327XTSA1) RoHS: Compliant Min Qty: 4500 Container: Reel	Americas - 0	45000:$0.3169 27000:$0.3229 18000:$0.3339 9000:$0.3469 4500:$0.3599
BGAV1A10E6327XTSA1 DISTI # 81AC4451	Infineon Technologies AG	RF AMPLIFIER, 3.8GHZ, -30 TO 85DEG C,Frequency Min:3.4GHz,Frequency Max:3.8GHz,Gain:18dB,Noise Figure Typ:1.3dB,RF IC Case Style:ATSLP,No. of Pins:10Pins,Supply Voltage Min:1.7V,Supply Voltage Max:1.9V,Operating Temperature RoHS Compliant: Yes	4500	1000:$0.3790 500:$0.4810 250:$0.5120 100:$0.5430 50:$0.5980 25:$0.6520 10:$0.7070 1:$0.8380
BGAV1A10E6327XTSA1 DISTI # 726-BGAV1A10E6327XTS	Infineon Technologies AG	RF Amplifier RF SILICON MMIC RoHS: Compliant	4298	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750 2500:$0.3330 4500:$0.3330 9000:$0.3210 22500:$0.3100
BGAV1A10E6327XTSA1 DISTI # XSKDRABV0030233	Infineon Technologies AG	RoHS: Compliant	13500 in Stock0 on Order	13500:$0.4880 4500:$0.5229
BGAV1A10E6327XTSA1 DISTI # 2947799	Infineon Technologies AG	RF AMPLIFIER, 3.8GHZ, -30 TO 85DEG C RoHS: Compliant	4500	1:$0.5580
BGAV1A10E6327XTSA1 DISTI # 2947799	Infineon Technologies AG	RF AMPLIFIER, 3.8GHZ, -30 TO 85DEG C	4500	500:£0.3450 250:£0.3680 100:£0.3900 50:£0.5070 1:£0.5800

관련 상품

영상

부분 #

설명

Mfr.#: AM-48.000MAGE-T

OMO.#: OMO-AM-48-000MAGE-T-TXC

Crystals 48.000MHz 30ppm 12pF -40C to 85C

유효성

재고:: Available
주문 시:: 1987
수량 입력:

BGAV1A10E6327XTSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.83~~; ~~US$0.83~~

10: ~~US$0.70~~; ~~US$7.00~~

100: ~~US$0.54~~; ~~US$53.80~~

500: ~~US$0.48~~; ~~US$238.00~~

1000: ~~US$0.38~~; ~~US$375.00~~

2500: ~~US$0.33~~; ~~US$832.50~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

BGA 714

최신 제품

BCR601 - Linear LED IC with Active Headroom Contro

Infineon's BCR601 is a linear LED controller IC regulating the LED current with an external driver transistor.
BCR602 - Linear LED IC Controller

Infineon's BCR602 is a linear LED controller IC regulating the LED current by means of an external driver transistor.
600V Trench IGBTs

International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
800 V CoolMOS™ P7 Power Transistors

Infineon's 800 V CoolMOS™ P7 series set a benchmark in 800 V super junction technologies by combining best-in-class performance with state-of-the-art usability.
OptiMOS™-5 40 V MOSFETs in SS08

Infineon’s OptiMOS™-5 40 V in SS08 is the little MOSFET that enables big current.

More Newest Products

BGAV1A10E6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes