S29GL01GS10DHI010

Mfr. #:: S29GL01GS10DHI010
제조사:: Cypress Semiconductor
설명:: IC FLASH 1G PARALLEL 64FBGA GL-S
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: S29GL01GS10DHI010 데이터 시트
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ECAD Model:
추가 정보:: S29GL01GS10DHI010 추가 정보 S29GL01GS10DHI010 Product Details

제품 속성
속성 값

제조사: 싸이프레스 반도체

제품 카테고리: 메모리

시리즈: GL-S

포장: 쟁반

장착 스타일: SMD/SMT

작동 온도 범위: - 40 C to + 85 C

패키지 케이스: FBGA-64

작동 온도: -40°C ~ 85°C (TA)

상호 작용: 평행 한

전압 공급: 2.7 V ~ 3.6 V

공급자-장치-패키지: 64-FBGA (9x9)

메모리 크기: 1G (64M x 16)

메모리형: 플래시 - NOR

속도: 100ns

건축학: 식

포맷 메모리: 플래시

인터페이스 유형: 평행 한

조직: 64 M x 16

공급 전류 최대: 100 mA

데이터 버스 너비: 16 bit

공급 전압 최대: 3.6 V

공급 전압 최소: 2.7 V

타이밍 유형: 비동기

Tags: S29GL01GS10DHI, S29GL01GS10D, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S29GL01GS10DHI010 설명

***p One Stop Japan: NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16bit 100ns 64-Pin FBGA Tray

***i-Key: IC FLASH 1G PARALLEL 64FBGA

***Components: Cypress, S29GL01GS10DHI010

***ark: MEMORY, FLASH, 1GB, 3V, 64BGA; Memory Size:1Gbit; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:100ns; Interface Type:CFI; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC ;RoHS Compliant: Yes

***ment14 APAC: MEMORY, FLASH, 1GB, 3V, 64BGA; Memory Size:1Gbit; Interface Type:CFI; Access Time:100ns; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:BGA; No. of Pins:64; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (18-Jun-2012); IC Generic Number:S29GL01GS

S29GL01GS10DHI010 추가 정보

S29 GL-S MirrorBit® Eclipse™ Flash: Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

Market price

부분 #	제조	설명	재고	가격
S29GL01GS10DHI010 DISTI # C1S159300538785	Cypress Semiconductor	NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 100ns 64-Pin FBGA Tray RoHS: Compliant	363	200:$7.4900 100:$7.7600 50:$8.5100 10:$9.6600 1:$13.9000
S29GL01GS10DHI010 DISTI # 1274-1015-ND	Cypress Semiconductor	IC FLASH 1G PARALLEL 64FBGA RoHS: Compliant Min Qty: 1 Container: Tray	1007In Stock	1040:$8.0845 520:$8.3633 260:$8.4500 100:$8.8898 50:$10.0978 25:$10.1536 10:$10.3890 1:$11.2200
S29GL01GS10DHI010 DISTI # 39T5692	Cypress Semiconductor	FLASH MEMORY, 1024 MBIT, 100 NS, 64-BGA,Flash Memory Type:Parallel NOR,Memory Size:1Gbit,Flash Memory Configuration:64M x 16bit,IC Interface Type:Parallel,Memory Case Style:FBGA,No. of Pins:64Pins,Clock Frequency:- , RoHS Compliant: Yes	0	1:$9.6300 10:$8.9100 25:$8.7100 50:$8.6600 100:$7.8300 250:$7.6500
S29GL01GS10DHI010 DISTI # 797-S29GL01GS10DHI01	Cypress Semiconductor	NOR Flash 1G 3V 100ns Parallel NOR Flash RoHS: Compliant	0	1:$9.6300 10:$8.9100 25:$8.7100 50:$8.6600 100:$7.8300 250:$7.6500
S29GL01GS10DHI010	Spansion	RoHS: Not Compliant	105	1000:$9.9900 500:$10.5100 100:$10.9400 25:$11.4100 1:$12.2900
S29GL01GS10DHI010 DISTI # 1972435	Cypress Semiconductor	MEMORY, FLASH, 1GB, 3V, 64BGA RoHS: Compliant	0	1:$15.2400 10:$14.1100 25:$13.7900 50:$13.7100 100:$12.5300

관련 상품

영상	부분 #	설명
	Mfr.#: S29GL01GS12DHVV10 OMO.#: OMO-S29GL01GS12DHVV10	NOR Flash Nor
	Mfr.#: S29GL01GT12DHVV10 OMO.#: OMO-S29GL01GT12DHVV10	NOR Flash NOR
	Mfr.#: S29GL01GT10TFI010 OMO.#: OMO-S29GL01GT10TFI010	NOR Flash Nor
	Mfr.#: S29GL01GS11FHIV20 OMO.#: OMO-S29GL01GS11FHIV20	NOR Flash Nor
	Mfr.#: S29GL01GS10DHI020 OMO.#: OMO-S29GL01GS10DHI020	NOR Flash 1G 3V 100ns Parallel NOR Flash
	Mfr.#: S29GL01GS12TFIV10 OMO.#: OMO-S29GL01GS12TFIV10	NOR Flash 1G 3V 120ns Parallel NOR Flash
	Mfr.#: S29GL01GS11DHSS10 OMO.#: OMO-S29GL01GS11DHSS10	NOR Flash Nor
	Mfr.#: S29GL01GS11FHIV20 OMO.#: OMO-S29GL01GS11FHIV20-CYPRESS-SEMICONDUCTOR	IC FLASH 1G PARALLEL 64BGA GL-S
	Mfr.#: S29GL01GS10TFI023 OMO.#: OMO-S29GL01GS10TFI023-CYPRESS-SEMICONDUCTOR	Flash Memory 1G BIT, 3V, 100NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
	Mfr.#: S29GL01GT11TFIV20 OMO.#: OMO-S29GL01GT11TFIV20-CYPRESS-SEMICONDUCTOR	Flash Memory NOR

유효성

재고:: Available
주문 시:: 3000
수량 입력:

S29GL01GS10DHI010의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$11.22~~; ~~US$11.22~~

10: ~~US$10.66~~; ~~US$106.59~~

100: ~~US$10.10~~; ~~US$1 009.80~~

500: ~~US$9.54~~; ~~US$4 768.50~~

1000: ~~US$8.98~~; ~~US$8 976.00~~

시작

S29GL01GS10DHI 4
S29GL01GS10D 15
S29GL01GS10 41
S29GL01GS 117
S29GL01G 271
S29GL01 293
S29GL0 823
S29GL 1892
S29G 1898
S29 3414

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S29GL01GS10DHI010

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes