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BSM25GD120DN2

BSM25GD120DN2
Mfr. #:
BSM25GD120DN2
제조사:
Infineon Technologies
설명:
IGBT Modules 1200V 25A FL BRIDGE
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSM25GD120DN2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
EUPEC
제품 카테고리
IC 칩
제품
IGBT 실리콘 모듈
장착 스타일
나사
패키지 케이스
EconoPACK 2A
구성
마녀
Pd 전력 손실
200 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 40 C
컬렉터-이미터-전압-VCEO-최대
1200 V
컬렉터-이미터-포화-전압
2.5 V
연속 수집기 전류 at-25-C
35 A
게이트 이미 터 누설 전류
180 nA
최대 게이트 이미 터 전압
+/- 20 V
Tags
BSM25GD120DN2, BSM25GD120DN, BSM25GD120D, BSM25GD12, BSM25GD, BSM25G, BSM25, BSM2, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V,25A,FL BRIDGE
***omponent
TRANS IGBT MODULE N-CH 1200V 35A 17ECONOPACK 2
***nell
IGBT MODULE, 1200V, ECONOPACK3; Transistor type:3-Phase Bridge; Voltage, Vces:1200V; Current, Ic continuous a max:25A; Voltage, Vce sat max:3V; Power dissipation:200W; Case style:Econopack 2; Current, Icm pulsed:50A; Power, Pd:200W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:2.5V; Voltage, Vceo:1200V
부분 # 제조 설명 재고 가격
BSM25GD120DN2BOSA1
DISTI # BSM25GD120DN2BOSA1-ND		Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$91.5730
BSM25GD120DN2E3224BOSA1
DISTI # BSM25GD120DN2E3224BOSA1-ND		Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$91.5730
BSM25GD120DN2BOSA1
DISTI # BSM25GD120DN2BOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm - Trays (Alt: BSM25GD120DN2BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$85.3900
  • 20:$82.3900
  • 40:$79.3900
  • 60:$76.6900
  • 100:$75.2900
BSM25GD120DN2E3224
DISTI # SP000100361		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100361)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1:€81.2900
  • 10:€78.8900
  • 25:€77.9900
  • 50:€74.0900
  • 100:€72.7900
  • 500:€71.9900
  • 1000:€70.9900
BSM25GD120DN2E3224BOSA1
DISTI # BSM25GD120DN2E3224BOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM25GD120DN2E3224BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$85.3900
  • 20:$82.3900
  • 40:$79.3900
  • 60:$76.6900
  • 100:$75.2900
BSM25GD120DN2
DISTI # 95M4164		Infineon Technologies AGIGBT MOD, N-CH, 1.2KV, 35A, ECONOPACK 2,Transistor Polarity:N Channel,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:-RoHS Compliant: Yes0
  • 1:$94.9300
  • 5:$93.1900
  • 10:$88.9900
BSM25GD120DN2
DISTI # 641-BSM25GD120DN2		Infineon Technologies AGIGBT Modules 1200V 25A FL BRIDGE
RoHS: Compliant		0
    BSM25GD120DN2E3224
    DISTI # 641-BSM25GD120DN2E32    		Infineon Technologies AGIGBT Modules N-CH 1.2KV 35A
    RoHS: Compliant    		0
    • 1:$94.9300
    • 5:$93.1900
    • 10:$88.9900
    • 25:$86.0300
    BSM25GD120DN2E3224
    DISTI # IGBT1939    		Infineon Technologies AGSixpack1200V 35A Econo 2
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 10:$100.9500
    • 20:$86.2100
    BSM25GD120DN2
    DISTI # 1496948    		Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
    RoHS: Compliant    		0
    • 1:£73.2500
    • 5:£71.9100
    • 10:£70.6300
    BSM25GD120DN2
    DISTI # 1496948    		Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
    RoHS: Compliant    		0
    • 1:$150.2200
    • 5:$147.4700
    • 10:$146.4300
    영상 부분 # 설명
    BSM25GP120

    Mfr.#: BSM25GP120

    OMO.#: OMO-BSM25GP120

    		 IGBT Modules 1200V 25A PIM
    BSM25GD120DLC3224

    Mfr.#: BSM25GD120DLC3224

    OMO.#: OMO-BSM25GD120DLC3224-1190

    		 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
    BSM25GB120D

    Mfr.#: BSM25GB120D

    OMO.#: OMO-BSM25GB120D-1190

    		 신규 및 오리지널
    BSM25GB120DN2

    Mfr.#: BSM25GB120DN2

    OMO.#: OMO-BSM25GB120DN2-1190

    		 IGBT Modules 1200V 25A DUAL
    BSM25GD100D

    Mfr.#: BSM25GD100D

    OMO.#: OMO-BSM25GD100D-1190

    		 신규 및 오리지널
    BSM25GD101D

    Mfr.#: BSM25GD101D

    OMO.#: OMO-BSM25GD101D-1190

    		 신규 및 오리지널
    BSM25GD120D

    Mfr.#: BSM25GD120D

    OMO.#: OMO-BSM25GD120D-1190

    		 신규 및 오리지널
    BSM25GD120DN

    Mfr.#: BSM25GD120DN

    OMO.#: OMO-BSM25GD120DN-1190

    		 신규 및 오리지널
    BSM25GP120-B2

    Mfr.#: BSM25GP120-B2

    OMO.#: OMO-BSM25GP120-B2-1190

    		 신규 및 오리지널
    BSM25GP120DN2

    Mfr.#: BSM25GP120DN2

    OMO.#: OMO-BSM25GP120DN2-1190

    		 신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    3000
    수량 입력:
    BSM25GD120DN2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$119.30
    US$119.30
    10
    US$113.34
    US$1 133.36
    100
    US$107.37
    US$10 737.10
    500
    US$101.41
    US$50 703.00
    1000
    US$95.44
    US$95 440.90
    시작
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