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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC025N03MSGATMA1 DISTI # V72:2272_06384635 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 4735 |
|
| BSC025N03MSGATMA1 DISTI # BSC025N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5463In Stock |
|
| BSC025N03MSGATMA1 DISTI # BSC025N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5463In Stock |
|
| BSC025N03MSGATMA1 DISTI # BSC025N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 5000In Stock |
|
| BSC025N03MSGATMA1 DISTI # 31038104 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC025N03MSGATMA1 DISTI # 30729205 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 4735 |
|
| BSC025N03MSGXT DISTI # BSC025N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC025N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 5000 |
|
| BSC025N03MSGATMA1 DISTI # 60R2482 | Infineon Technologies AG | MOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 1329 |
|
| BSC025N03MS G DISTI # 726-BSC025N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M RoHS: Compliant | 4623 |
|
| BSC025N03MSGATMA1 DISTI # 726-BSC025N03MSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M RoHS: Compliant | 5237 |
|
| BSC025N03MSGATMA1 DISTI # BSC025N03MSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,23A,83W,PG-TDSON-8 | 4990 |
|
| BSC025N03MSGATMA1 DISTI # 1775433 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant | 1329 |
|
| BSC025N03MSGATMA1 DISTI # 1775433 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant | 1329 |
|
| BSC025N03MSGATMA1 DISTI # C1S322000210776 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 4735 |
|
| BSC025N03MSGATMA1 DISTI # C1S322000470943 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSC025N03MSGATMA1 OMO.#: OMO-BSC025N03MSGATMA1 |
MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M |
|
Mfr.#: BSC025N03MSG OMO.#: OMO-BSC025N03MSG-1190 |
Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC025N03MSGATMA1 |
MOSFET N-CH 30V 100A TDSON-8 |
|
|
Mfr.#: BSC025N03MSGATMA1 , TDA5 |
신규 및 오리지널 |