FDMC86102LZ

Mfr. #:: FDMC86102LZ
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET 100V N-Channel PowerTrench MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDMC86102LZ 데이터 시트
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추가 정보:: FDMC86102LZ 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: Power-33-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 7 A

Rds On - 드레인 소스 저항:: 24 mOhms

Vgs th - 게이트 소스 임계 전압:: 1.6 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 15.3 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 41 W

구성:: 하나의

상표명:: 파워트렌치

포장:: 릴

키:: 0.8 mm

길이:: 3.3 mm

시리즈:: FDMC86102LZ

트랜지스터 유형:: 1 N-Channel

너비:: 3.3 mm

상표:: 온세미컨덕터 / 페어차일드

순방향 트랜스컨덕턴스 - 최소:: 24 S

가을 시간:: 2.5 ns

상품 유형:: MOSFET

상승 시간:: 2.3 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 19 ns

일반적인 켜기 지연 시간:: 7.1 ns

단위 무게:: 0.005832 oz

Tags: FDMC86102, FDMC8610, FDMC861, FDMC86, FDMC8, FDMC, FDM

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMC86102LZ 설명

***emi: N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ

***nell: MOSFET, N CH, 100V, 22A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

***ark: TUBE // Automotive MOSFET 55V, 49A, 17.5 mOhm, 42 nC Qg, D2PAK

***ical: Trans MOSFET N-CH Si 55V 49A Automotive 3-Pin(2+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

***roFlash: Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

***ineon: Benefits: Advanced Planar Technology; Low On-Resistance; Dynamic dV/dT and dI/dT capability; 175C Operating Temperature; Fast Switching; Fully Avalanche Rated; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

***ment14 APAC: MOSFET, N CH, 55V, 49A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)

***emi: N-Channel PowerTrench® MOSFET 30V, 12A, 11.5mΩ

*** Source Electronics: MOSFET N-CH 30V 20A POWER33 / Trans MOSFET N-CH Si 30V 12A 8-Pin WDFN EP T/R

***nell: MOSFET, N CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ure Electronics: Single N-Channel 600 V 230 mOhm 31 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 600V 16.8A 3-Pin(3+Tab) TO-220FP Tube

***nell: MOSFET, N-CH, 600V, 16.8A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 16.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.207ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

*** Source Electronics: MOSFET N CH 60V 13.5A 8PQFN / Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R

***emi: N-Channel PowerTrench® MOSFET 60V, 22A, 8.2mΩ

***ure Electronics: FDMS86520L Series 60 V 22 A 8.2 mOhm N-Ch PowerTrench® MOSFET - Power 56

*** Stop Electro: Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 60V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***sible Micro: Transistor, MOSFET, N-CH, 60V, 25A, 2.5 mOhms, QFN, SMD

***Yang: Trans MOSFET N-CH 60V 25A 8-Pin Power 56 T/R - Product that comes on tape, but is not reeled

***ure Electronics: FDMS86500L Series 60 V 158 A 2.5 mOhm N-Channel PowerTrench® MOSFET - POWER-56

***emi: N-Channel PowerTrench® MOSFET 60V, 158A, 2.5mΩ

*** Stop Electro: Power Field-Effect Transistor, 25A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***enic: 60V 158A 2.1m´Î@10V25A 104W 1.8V@250uA 50pF@30V N Channel 9.42nF@30V 54nC@0~4.5V -55¡Í~+150¡Í@(Tj) Power-56-8 MOSFETs ROHS

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.

***nell: MOSFET, N CH, 60V, 80A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

FDMC86102LZ 추가 정보

Fairchild PowerTrench MOSFETs

FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs: ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

부분 #	제조	설명	재고	가격
FDMC86102LZ DISTI # V72:2272_06337908	ON Semiconductor	PT5 100V/20V NCH WITH ZENER PO	1330	1000:$0.6556 500:$0.8315 250:$0.9479 100:$0.9636 25:$1.1257 10:$1.2508 1:$1.6018
FDMC86102LZ DISTI # V36:1790_06337908	ON Semiconductor	PT5 100V/20V NCH WITH ZENER PO	0	3000000:$0.5242 1500000:$0.5245 300000:$0.5549 30000:$0.6106 3000:$0.6200
FDMC86102LZ DISTI # FDMC86102LZCT-ND	ON Semiconductor	MOSFET N-CH 100V 7A 8MLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	23167In Stock	1000:$0.7300 500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
FDMC86102LZ DISTI # FDMC86102LZDKR-ND	ON Semiconductor	MOSFET N-CH 100V 7A 8MLP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	23167In Stock	1000:$0.7300 500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
FDMC86102LZ DISTI # FDMC86102LZTR-ND	ON Semiconductor	MOSFET N-CH 100V 7A 8MLP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	21000In Stock	15000:$0.6048 6000:$0.6284 3000:$0.6615
FDMC86102LZ DISTI # 33259028	ON Semiconductor	PT5 100V/20V NCH WITH ZENER PO	6000	3000:$0.6004
FDMC86102LZ DISTI # 32040017	ON Semiconductor	PT5 100V/20V NCH WITH ZENER PO	1330	10:$1.6018
FDMC86102LZ DISTI # 30578517	ON Semiconductor	PT5 100V/20V NCH WITH ZENER PO	130	13:$1.9875
FDMC86102LZ DISTI # FDMC86102LZ	ON Semiconductor	Trans MOSFET N-CH 100V 7A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86102LZ) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.5549 18000:$0.5689 12000:$0.5759 6000:$0.5839 3000:$0.5879
FDMC86102LZ DISTI # FDMC86102LZ	ON Semiconductor	Trans MOSFET N-CH 100V 7A 8-Pin Power 33 T/R (Alt: FDMC86102LZ) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.7377 75000:$0.7500 30000:$0.7759 15000:$0.8036 9000:$0.8333 6000:$0.8654 3000:$0.9000
FDMC86102LZ DISTI # FDMC86102LZ	ON Semiconductor	Trans MOSFET N-CH 100V 7A 8-Pin Power 33 T/R (Alt: FDMC86102LZ) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.5589 18000:€0.6019 12000:€0.6519 6000:€0.7109 3000:€0.8689
FDMC86102LZ DISTI # 84W8861	ON Semiconductor	Trans MOSFET N-CH 100V 7A 8-Pin Power 33 T/R - Product that comes on tape, but is not reeled (Alt: 84W8861) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.6960 500:$0.8770 250:$0.9330 100:$0.9890 50:$1.1300 25:$1.2800 1:$1.5000
FDMC86102LZ DISTI # 54T8331	ON Semiconductor	MOSFET, N CHANNEL, 100V, 0.019OHM, 22A, MLP-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.6200 3000:$0.6200
FDMC86102LZ DISTI # 84W8861	ON Semiconductor	MOSFET, N CHANNEL, 100V, 0.019OHM, 22A, POWER 33-8,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:41WRoHS Compliant: Yes	0	1000:$0.6960 500:$0.8770 250:$0.9330 100:$0.9890 50:$1.1300 25:$1.2800 1:$1.5000
FDMC86102LZ DISTI # 512-FDMC86102LZ	ON Semiconductor	MOSFET 100V N-Channel PowerTrench MOSFET RoHS: Compliant	58647	1:$1.4700 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6750 3000:$0.5990 9000:$0.5770
FDMC86102LZ	ACTIVE COMPNTS/DIODES		50
FDMC86102LZ DISTI # 8063507P	ON Semiconductor	MOSFETFAIRCHILDFDMC86102LZ, RL	7065	500:£0.5620 250:£0.5700 50:£0.5780 25:£0.5840
FDMC86102LZ	Fairchild Semiconductor Corporation	7A, 100V, 0.024OHM, N-CHANNEL, SI, POWER, MOSFET	5
FDMC86102LZ DISTI # 2822536	ON Semiconductor	MOSFET, N-CH, 100V, 22A, POWER 33-8	8216	500:£0.6670 250:£0.7100 100:£0.7530 10:£1.0300 1:£1.3100
FDMC86102LZ DISTI # 2323180	ON Semiconductor	MOSFET, N CH, 100V, 22A, POWER 33-8 RoHS: Compliant	0	15000:$0.9670 6000:$1.0100 3000:$1.0700
FDMC86102LZ DISTI # 2822536	ON Semiconductor	MOSFET, N-CH, 100V, 22A, POWER 33-8 RoHS: Compliant	7741	5000:$0.8510 1000:$0.8730 500:$0.9470 250:$1.1600 100:$1.4100 25:$2.0600 5:$2.4100

영상	부분 #	설명
	Mfr.#: ADS7951SBRGET OMO.#: OMO-ADS7951SBRGET	Analog to Digital Converters - ADC 12B 1MSPS 8Ch Sgl End MicroPwr SAR ADC
	Mfr.#: TMS320F28335ZJZQ OMO.#: OMO-TMS320F28335ZJZQ	Digital Signal Processors & Controllers - DSP, DSC Digital Signal Controller
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	Mfr.#: AT45DB161E-MHF2B-T OMO.#: OMO-AT45DB161E-MHF2B-T	NOR Flash 16M, 85MHz 2.3-3.6V DataFlash
	Mfr.#: SR70-02CTG OMO.#: OMO-SR70-02CTG	TVS Diodes / ESD Suppressors 2CH 15KV 70V
	Mfr.#: TPS3803G15DCKR OMO.#: OMO-TPS3803G15DCKR	Supervisory Circuits Adj 1.5V V Detector
	Mfr.#: 1SMB5933BT3G OMO.#: OMO-1SMB5933BT3G	Zener Diodes 22V 3W
	Mfr.#: FDMC86520L OMO.#: OMO-FDMC86520L	MOSFET 60V N-Chnl Pwr Trench MOSFET
	Mfr.#: IRS21844MTRPBF OMO.#: OMO-IRS21844MTRPBF-INFINEON-TECHNOLOGIES	Gate Drivers Hlf Brdg Drvr Sft Trn On Invrt ShutDwn
	Mfr.#: ADS7951SBRGET OMO.#: OMO-ADS7951SBRGET-TEXAS-INSTRUMENTS	Analog to Digital Converters - ADC 12B 1MSPS 8Ch Sgl End MicroPwr SAR ADC

FDMC86102LZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes